US2025341540A1PendingUtilityA1

Method of inspecting tip of atomic force microscope and method of manufacturing semiconductor device

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Dec 21, 2021Filed: Jul 17, 2025Published: Nov 6, 2025
Est. expiryDec 21, 2041(~15.4 yrs left)· nominal 20-yr term from priority
H10P 74/203G01Q 60/38G01Q 70/08G01Q 40/02H10B 12/053G01Q 70/10G01Q 60/24G01Q 40/00G01Q 20/02H01L 22/12
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Claims

Abstract

A method of operating an atomic force microscope (AFM) is provided. The method includes inspecting a sample by using the AFM and inspecting a tip of a probe of the AFM by using a characterization sample. The characterization sample includes a first characterization pattern that includes a line and space pattern of a first height, a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height, and a third characterization pattern that includes a line and space pattern of a third height that is lower than the second height, and includes a rough surface.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of operating an atomic force microscope (AFM), the method comprising:
 inspecting a sample by using the AFM;   generating, based on the inspecting, a scanned sample image including one or more abnormalities;   inspecting a tip of a probe of the AFM by using a characterization sample to determine if the tip is normal or abnormal;   determining that the sample is abnormal if the tip of the AFM is determined to be normal; and   replacing the tip of the AFM if the tip of the AFM is determined to be abnormal.   
     
     
         2 . The method of  claim 1 , wherein the characterization sample comprises:
 a first characterization sample that includes a line and space pattern having a height of 100 nm to 250 nm; and   a second characterization sample that includes a line and space pattern having a height of 50 nm to 150 nm.   
     
     
         3 . The method of  claim 2 , wherein the characterization sample further comprises a third characterization pattern that includes a rough surface. 
     
     
         4 . The method of  claim 3 , wherein a root mean square surface roughness of the rough surface of the third characterization pattern is within a range of 0.5 nm to 1.5 nm. 
     
     
         5 . A method of operating an atomic force microscope (AFM), the method comprising:
 inspecting a sample by using the AFM;   generating, based on the inspecting, a scanned sample image including one or more abnormalities;   inspecting a tip of a probe of the AFM by using a characterization sample to determine if the tip is normal or abnormal; and   determining whether the sample is abnormal and whether the tip of the AFM has to be replaced, based on the inspecting the tip of the AFM by using the characterization sample,   wherein the characterization sample comprises at least two line and space patterns having different heights.   
     
     
         6 . The method of  claim 5 , wherein the characterization sample comprises:
 a first characterization pattern that includes a line and space pattern of a first height; and   a second characterization pattern that includes a line and space pattern of a second height that is lower than the first height.   
     
     
         7 . The method of  claim 6 , wherein the first height is within a range of 100 nm to 250 nm. 
     
     
         8 . The method of  claim 6 , wherein the second height is within a range of 50 nm to 150 nm. 
     
     
         9 . The method of  claim 6 , wherein the characterization sample further comprises a third characterization pattern that includes a rough surface. 
     
     
         10 . The method of  claim 9 , wherein a root mean square surface roughness of the rough surface of the third characterization pattern is within a range of 0.5 nm to 1.5 nm.

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