Inductively-coupled plasma antennas for semiconductor wafer processing systems

Abstract

An inductively coupled plasma antenna, which is configured for use in a semiconductor wafer processing apparatus, includes: a plurality of loop-shaped coil portions extending adjacent to each other in sequence, said plurality of loop-shaped coil portions including at least a first loop-shaped coil portion and a second loop-shaped coil portion, and a high-frequency power source configured to supply high-frequency current to each of the plurality of loop-shaped coil portions, such that respective high-frequency currents flow in opposite directions in adjacent and facing lines of the first loop-shaped coil portion and the second loop-shaped coil portion.

1 . An inductively coupled plasma antenna configured for use in a semiconductor wafer processing apparatus, comprising:
 a plurality of loop-shaped coil portions extending adjacent to each other in sequence, said plurality of loop-shaped coil portions including at least a first loop-shaped coil portion and a second loop-shaped coil portion; and   a high-frequency power source configured to supply high-frequency current to each of the plurality of loop-shaped coil portions, such that respective high-frequency currents flow in opposite directions in adjacent and facing lines of the first loop-shaped coil portion and the second loop-shaped coil portion.   
     
     
         2 . The antenna of  claim 1 , wherein each of the first loop-shaped coil portion and the second loop-shaped coil portion respectively includes:
 a first line through which a high-frequency current flows, when provided by the high-frequency power source;   a second line through which the high-frequency current flows after passing through first line, to thereby support generation of a plasma;   a third line through which the high-frequency current flows after passing through the second line, and in a direction opposite to a direction of current flow in an adjacent first line of an adjacent loop coil portion; and   a fourth line through which the high-frequency current flows in a direction opposite to a direction of current flow in the second line of the same loop coil portion.   
     
     
         3 . The antenna of  claim 2 , further comprising a shielding portion through which the first line and the third line of the same loop-shaped coil portion penetrate, and which extends between the corresponding second and fourth lines. 
     
     
         4 . The antenna of  claim 3 , wherein the shielding portion includes a metal plate without a hole in a center thereof or a metal plate with a hole formed in the center thereof. 
     
     
         5 . The antenna of  claim 3 , wherein the shielding portion includes a metal plate, and a ferromagnetic or ferrimagnetic shielding film adjacent an underside of the metal plate. 
     
     
         6 . The antenna of  claim 3 , wherein the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are independently electrically connected to a corresponding high-frequency power source, or the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are electrically connected in common to a connection line, which is branched from the high-frequency power source. 
     
     
         7 . The antenna of  claim 3 , wherein an end of the fourth line of a respective loop-shaped coil portion is grounded to the shielding portion. 
     
     
         8 . The antenna of  claim 1 , wherein the high-frequency power source is electrically connected to a synchronization device, which is configured to control a shape of the high-frequency current. 
     
     
         9 . An inductively coupled plasma antenna configured for use in a semiconductor wafer processing apparatus, comprising:
 a first loop-shaped coil portion, which includes a first line through which a high-frequency current flows, a second line through which the high-frequency current flows and generates a plasma, a third line which opposes the first line and through which the high-frequency current flows in a direction opposite to a direction of current through the first line, and a fourth line through which the high-frequency current flows in a direction opposite to a direction of current through the second line;   a second loop-shaped coil portion extending immediately adjacent the first loop-shaped coil portion, and including a first line through which a high-frequency current flows, a second line through which the high-frequency current having passed through the first line flows and generates a plasma, a third line which opposes the first line and through which the high-frequency current flows in a direction opposite to a direction of current through the first line, and a fourth line through which the high-frequency current flows in a direction opposite to a direction of current through the second line;   a high-frequency power source configured to supply respective high-frequency currents to the first loop-shaped coil portion and the second loop-shaped coil portion; and   a shielding portion having a through-hole through which the first line of the first loop-shaped coil portion and the third line of the second loop-shaped coil portion penetrate, the shielding portion being disposed between the second line and the fourth line of each of the first loop-shaped coil portion and the second loop-shaped coil portion.   
     
     
         10 . The antenna of  claim 9 , wherein the third line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion extend immediately adjacent to each other with a gap therebetween; and wherein high-frequency currents in the third line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion flow in opposite directions. 
     
     
         11 . The antenna of  claim 9 , wherein the shielding portion includes a metal plate with or without a hole in its center. 
     
     
         12 . The antenna of  claim 9 , wherein the shielding portion includes a metal plate, and a ferromagnetic or ferrimagnetic shielding film adjacent an underside of the metal plate. 
     
     
         13 . The antenna of  claim 9 , wherein the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are independently electrically connected to a corresponding high-frequency power source, or the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are electrically connected in common to a connection line, which is branched from the high-frequency power source. 
     
     
         14 . The antenna of  claim 9 , wherein an end of the fourth line of a respective loop-shaped coil portion is grounded to the shielding portion. 
     
     
         15 . The antenna of  claim 9 , wherein the high-frequency power source is electrically connected to a synchronization device, which is configured to control a shape of the high-frequency current. 
     
     
         16 . A semiconductor wafer processing apparatus, comprising:
 a process chamber having an internal space therein;   a lower electrode configured to support a semiconductor wafer within the process chamber;   an upper electrode that faces the lower electrode and includes a shower head configured to supply plasma gas; and   an inductively coupled plasma antenna including a segment coil portion in which a plurality of loop-shaped segment coils disposed on an upper portion of the upper electrode are adjacently disposed, said inductively coupled plasma antenna including a high-frequency power source electrically connected to each of the plurality of loop-shaped segment coils and individually supplying high-frequency current;   wherein the plurality of loop-shaped segment coils include a first loop-shaped coil portion and a second loop-shaped coil portion;   wherein the first loop-shaped coil portion and the second loop-shaped coil portion respectively include:
 a first line through which the high-frequency current flows; 
 a second line through which the high-frequency current having passed through the first line flows and generates a plasma; 
 a third line through which the high-frequency current of which a direction has been changed through the second line flows; and 
 a fourth line through which the high-frequency current flows in a direction opposite to a direction of current through the second line; and 
   wherein the high-frequency current flowing through the first line of one of the first loop-shaped coil portion and the second loop-shaped coil portion and the high-frequency current flowing through the third line of the other, facing the first line, flow in opposite directions.   
     
     
         17 . The apparatus of  claim 16 , further comprising a shielding portion having a through-hole through which the first line of the first loop-shaped coil portion and the third line of the second loop-shaped coil portion penetrate, and disposed between the second line and the fourth line of each of the first loop-shaped coil portion and the second loop-shaped coil portion. 
     
     
         18 . The apparatus of  claim 17 , wherein the shielding portion includes a metal plate with or without a hole in a center thereof. 
     
     
         19 . The apparatus of  claim 18 , wherein the shielding portion includes a ferromagnetic or ferrimagnetic shielding film adjacent an underside of the metal plate. 
     
     
         20 . The apparatus of  claim 16 ,
 wherein the high-frequency power source is connected to a synchronization device that is configured to adjust a shape of the high-frequency current;   wherein the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are independently electrically connected to a corresponding high-frequency power source, or the first line of the first loop-shaped coil portion and the first line of the second loop-shaped coil portion are electrically connected in common to a connection line, which is branched from the high-frequency power source.   
     
     
         21 . (canceled)