Polishing pad with heat dissipation pattern

Abstract

Provided is a polishing pad, a method for manufacturing a polishing pad, and a method for polishing. A polishing pad includes first grains formed from a first material with a first thermal conductivity; and second grains formed from a second material with a second thermal conductivity less than the first thermal conductivity. The first grains and second grains are arranged to form a polishing surface of the polishing pad to provide the polishing surface with a desired heat dissipation pattern.

What is claimed is: 
     
         1 . A polishing pad for polishing a semiconductor wafer, the polishing pad comprising:
 first grains formed from a first material with a first thermal conductivity; and   second grains formed from a second material with a second thermal conductivity less than the first thermal conductivity;   wherein the first grains and second grains are arranged to form a polishing surface of the polishing pad to provide the polishing surface with a desired heat dissipation pattern.   
     
     
         2 . The polishing pad of  claim 1 , wherein the polishing pad is formed with voids located on the polishing surface. 
     
     
         3 . The polishing pad of  claim 1 , wherein at the polishing surface the grains have a surface shape selected from circle, square, rectangle, triangle, pentagon, and hexagon. 
     
     
         4 . The polishing pad of  claim 1 , wherein the polishing surface has a circular periphery centered on an axis, and wherein the polishing surface is formed with radially-arranged regions having different desired thermal conductivities. 
     
     
         5 . The polishing pad of  claim 4 , wherein a central inner region is formed with a lower thermal conductivity than a radially outer region. 
     
     
         6 . The polishing pad of  claim 4 , wherein a central inner region is formed with a higher thermal conductivity than a radially outer region. 
     
     
         7 . The polishing pad of  claim 4 , wherein a series of regions are formed from the axis to the circular periphery, wherein a central inner region is formed with a lower thermal conductivity than a radially outer region and wherein a peripheral region is formed with a lower thermal conductivity than the radially outer region. 
     
     
         8 . The polishing pad of  claim 1 , wherein the polishing pad includes a sub-surface portion formed from a nanostructure material configured to transfer heat from the polishing surface. 
     
     
         9 . The polishing pad of  claim 8 , wherein the nanostructure material comprises nanospheres, nanocubes, or nano dendric structures. 
     
     
         10 . A method for manufacturing a polishing pad, the method comprising:
 providing a wafer layout design for a wafer;   simulating polishing of the wafer to determine heat distribution during polishing;   designing a heat dissipation pattern for a polishing pad to reduce removal rate variation of the wafer during polishing; and   manufacturing the polishing pad with the heat dissipation pattern.   
     
     
         11 . The method of  claim 10 , wherein simulating polishing of the wafer comprises determining the removal rate variation of the wafer during polishing. 
     
     
         12 . The method of  claim 10 , wherein manufacturing the polishing pad with the heat dissipation pattern comprises manufacturing the polishing pad from a first material with a first thermal conductivity and a second material with a second thermal conductivity less than the first thermal conductivity. 
     
     
         13 . The method of  claim 10 , wherein manufacturing the polishing pad with the heat dissipation pattern comprises fusing first grains formed from a first material with a first thermal conductivity and second grains formed from a second material with a second thermal conductivity less than the first thermal conductivity in an arrangement. 
     
     
         14 . The method of  claim 10 , wherein manufacturing the polishing pad with the heat dissipation pattern comprises performing a three-dimensional printing process. 
     
     
         15 . The method of  claim 10 , wherein the heat dissipation pattern is formed by a first material formed from a selected grain shape. 
     
     
         16 . A method for polishing, the method comprising:
 contacting an object to a polishing surface of a polishing pad, wherein the polishing surface has a desired heat dissipation pattern formed by a first material with a first thermal conductivity and a second material with a second thermal conductivity less than the first thermal conductivity;   rotating the object and/or the pad; and   dissipating heat from the polishing surface through the desired heat dissipation pattern.   
     
     
         17 . The method of  claim 16 , wherein the polishing pad is formed with voids located on the polishing surface. 
     
     
         18 . The method of  claim 16 , wherein the polishing surface has a circular periphery centered on an axis, and wherein the polishing surface is formed with radially-arranged regions having different desired thermal conductivities. 
     
     
         19 . The method of  claim 16 , wherein the polishing pad includes a sub-surface portion formed from a nanostructure material configured to transfer heat from the polishing surface. 
     
     
         20 . The method of  claim 19 , wherein the nanostructure material comprises nanospheres, nanocubes, and/or nano dendric structures.