Substrate drying apparatus and semiconductor device manufacturing method using same

Abstract

A substrate drying apparatus includes; a drying chamber configured to load a substrate and including a lower chamber and an upper chamber above the lower chamber, a supply port configured to supply a supercritical fluid into the drying chamber and including a main supply port and a sub-supply port horizontally spaced apart from the main supply port, wherein the main supply port penetrates a center portion of the upper chamber, and a first buffer member coupled to the upper chamber, vertically separated from the sub-supply port, and vertically overlapping the sub-supply port, such that supercritical fluid vertically introduced into the drying chamber through the sub-supply port is impeded by the first buffer member to change a flow direction for the supercritical fluid.

What is claimed is: 
     
         1 . A semiconductor device manufacturing method comprising:
 loading a substrate into a drying chamber of a drying module, wherein the drying chamber includes a lower chamber and an upper chamber above the lower chamber; and   drying the substrate in the drying chamber by supplying a supercritical fluid to the drying chamber through a supply port including a main supply port and a sub-supply port spaced apart from the main supply port in a first direction, wherein the main supply port penetrates a central portion of the upper chamber, and a buffer member is coupled to the upper chamber and spaced apart from the sub-supply port in a second direction intersecting the first direction to overlap the sub-supply port in the second direction, and   measuring pressure of the supercritical fluid in the drying chamber using a pressure meter to determine a measured pressure value.   
     
     
         2 . The semiconductor device manufacturing method of  claim 1 , further comprising:
 discharging the supercritical fluid from the drying chamber through an exhaust port, wherein a controller controls operation of at least one of the supply port and the exhaust port in response to the measured pressure value.   
     
     
         3 . The semiconductor device manufacturing method of  claim 1 , wherein a width of the buffer member is greater than a width of the sub-supply port. 
     
     
         4 . The semiconductor device manufacturing method of  claim 1 , wherein the buffer member has one of a convex shape and a concave shape with respect to the sub-supply port. 
     
     
         5 . The semiconductor device manufacturing method of  claim 1 , wherein the sub-supply port penetrates the upper chamber. 
     
     
         6 . The semiconductor device manufacturing method of  claim 1 ,
 wherein supplying the supercritical fluid to the drying chamber through the supply port includes:   supplying the supercritical fluid into the drying chamber through the sub-supply port during a first time period,   stopping the supply of the supercritical fluid into the drying chamber through the sub-supply port, and   supplying the supercritical fluid into the drying chamber through the main supply port during a second time period following the first time period.   
     
     
         7 . The semiconductor device manufacturing method of  claim 6 , wherein a controller controls operation of at least one of the sub-supply port and the main supply port in response to the measured pressure value. 
     
     
         8 . The semiconductor device manufacturing method of  claim 7 , wherein the controller opens the sub-supply port before the measured pressure value reaches a first pressure, and the controller opens the main supply port after the measured pressure value reaches the first pressure. 
     
     
         9 . The semiconductor device manufacturing method of  claim 8 , wherein the controller closes the sub-supply port after the measured pressure value reaches the first pressure. 
     
     
         10 . The semiconductor device manufacturing method of  claim 6 , wherein the supercritical fluid supplied into the drying chamber through the sub-supply port is impeded by the buffer member to change a flow direction of the supercritical fluid.