Film-forming method and film-forming apparatus

Abstract

A film-forming method includes forming a seed layer over a substrate; supplying a silicon-containing gas to the substrate and forming, over the seed layer, a bulk layer containing silicon; and thermally treating the substrate and crystallizing the bulk layer. The formation of the bulk layer includes supplying an impurity-containing gas during at least a part of a supply period of the silicon-containing gas.

What is claimed is: 
     
         1 . A film-forming method, comprising:
 forming a seed layer over a substrate;   supplying a silicon-containing gas to the substrate and forming, over the seed layer, a bulk layer containing silicon; and   thermally treating the substrate and crystallizing the bulk layer, wherein   the formation of the bulk layer includes supplying an impurity-containing gas during at least a part of a supply period of the silicon-containing gas.   
     
     
         2 . The film-forming method according to  claim 1 , wherein
 the supply of the impurity-containing gas is started at a first point in time partway through the supply period of the silicon-containing gas.   
     
     
         3 . The film-forming method according to  claim 1 , wherein
 the supply of the impurity-containing gas is stopped at a second point in time partway through the supply period of the silicon-containing gas.   
     
     
         4 . The film-forming method according to  claim 2 , wherein
 the supply of the impurity-containing gas is stopped at a second point in time partway through the supply period of the silicon-containing gas.   
     
     
         5 . The film-forming method according to  claim 3 , wherein
 a period of from the second point in time until an end of the supply period of the silicon-containing gas is same as a period of from a start of the supply period of the silicon-containing gas until a point in time at which the supply of the impurity-containing gas is started.   
     
     
         6 . The film-forming method according to  claim 4 , wherein
 a period of from the second point in time until an end of the supply period of the silicon-containing gas is same as a period of from a start of the supply period of the silicon-containing gas until the first point in time.   
     
     
         7 . The film-forming method according to  claim 1 , wherein
 the supply of the impurity-containing gas is stopped at an end of the supply period of the silicon-containing gas.   
     
     
         8 . The film-forming method according to  claim 2 , wherein
 the supply of the impurity-containing gas is stopped at an end of the supply period of the silicon-containing gas.   
     
     
         9 . The film-forming method according to  claim 1 , wherein
 the substrate includes an insulating film over a surface of the substrate, and   the seed layer is formed over the insulating film.   
     
     
         10 . The film-forming method according to  claim 1 , wherein
 the silicon-containing gas is a monosilane gas, and   the impurity-containing gas is an ethylene gas.   
     
     
         11 . A film-forming apparatus, comprising:
 a process chamber configured to house a substrate;   a supply configured to supply a silicon-containing gas and an impurity-containing gas into the process chamber;   a gas exhauster configured to exhaust gas in the process chamber;   a heater configured to heat the substrate; and   a controller configured to control the supply, the gas exhauster, and the heater, the controller including a memory and a processor connected to the memory, and the processor being configured to
 form a seed layer over the substrate, 
 supply the silicon-containing gas to the substrate and form, over the seed layer, a bulk layer containing silicon, 
 thermally treat the substrate and crystallize the bulk layer, and 
 supply, in the formation of the bulk layer, the impurity-containing gas during at least a part of a supply period of the silicon-containing gas.