US2025270232A1PendingUtilityA1

Sensor-embedded display panel and electronic device

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Apr 23, 2021Filed: May 13, 2025Published: Aug 28, 2025
Est. expiryApr 23, 2041(~14.7 yrs left)· nominal 20-yr term from priority
H10K 59/65H10K 59/12H10K 39/30H10K 59/35H10K 30/81H10K 30/30H10K 65/00C07F 7/30C07F 7/0816C07F 5/027C07D 517/22C07D 493/06C07D 487/04C07D 471/14C07D 471/06C07D 471/04C07D 421/14C07D 421/04H10K 50/11H10K 59/60C07D 517/04
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Claims

Abstract

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light absorption sensor, comprising:
 a pair of electrodes; and   a light absorbing layer between the pair of electrodes,   wherein the light absorbing layer includes
 a p-type semiconductor, the p-type semiconductor being configured to selectively absorb light of any one of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or an infrared wavelength spectrum, and 
 an n-type semiconductor, the n-type semiconductor forming a pn junction with the p-type semiconductor, 
   wherein the n-type semiconductor is represented by Chemical Formula 1A or 1B:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formulas 1A and 1B,
 R 1  to R 4 , R a1 , and R a2  are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof, and 
 at least one of R a1  or R a2  is a halogen; a cyano group; a halogen-substituted C1 to C30 alkyl group; a halogen-substituted C6 to C30 aryl group; a halogen-substituted C3 to C30 heterocyclic group; a cyano-substituted C1 to C30 alkyl group; a cyano-substituted C6 to C30 aryl group; a cyano-substituted C3 to C30 heterocyclic group; a substituted or unsubstituted pyridinyl group; a substituted or unsubstituted pyrimidinyl group; a substituted or unsubstituted triazinyl group; a substituted or unsubstituted pyrazinyl group; a substituted or unsubstituted quinolinyl group; a substituted or unsubstituted isoquinolinyl group; a substituted or unsubstituted quinazolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyridinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyridinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrimidinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrimidinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted triazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted triazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted pyrazinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted pyrazinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted isoquinolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted isoquinolinyl group; a C1 to C30 alkyl group substituted with a substituted or unsubstituted quinazolinyl group; a C6 to C30 aryl group substituted with a substituted or unsubstituted quinazolinyl group; or any combination thereof. 
 
       
     
     
         2 . The light absorption sensor of  claim 1 , wherein the p-type semiconductor is represented by Chemical Formula 2: 
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 2,
 X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e , 
 Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof, 
 Ar 1a  and Ar 2a  are each independently a substituted or unsubstituted C6 to C30 aryl(ene) group or a substituted or unsubstituted C3 to C30 heteroaryl(ene) group, 
 R 1a  to R 3a  and R b  to R e  are each independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl(ene) group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl(ene) group, a substituted or unsubstituted C3 to C30 heteroaryl(ene) group, a halogen, a cyano group, or any combination thereof, and 
 Ar 1a , Ar 2a , R 1a , and R 2a  are each independently present, or two adjacent ones of Ar 1a , Ar 2a , R 1a , or R 2a  are bonded to each other to form a ring. 
 
       
     
     
         3 . The light absorption sensor of  claim 2 , wherein the p-type semiconductor is represented by Chemical Formula 2A or 2B: 
       
         
           
           
               
               
           
         
         wherein, in Chemical Formulas 2A and 2B,
 X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e , Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof, 
 Ar 1a  and Ar 2a  are each independently a substituted or unsubstituted C6 to C30 arylene group or a substituted or unsubstituted C3 to C30 heteroarylene group, 
 L and Z are each independently a single bond, O, S, Se, Te, SO, SO 2 , CR f R g , SiR h R i , GeR j R k , NR l , a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C3 to C30 cycloalkylene group, a substituted or unsubstituted C6 to C30 arylene group, or any combination thereof, and 
 R 1a , R 2a , R 3a , and R b  to R l  are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or any combination thereof. 
 
       
     
     
         4 . An electronic device comprising the light absorption sensor of  claim 1 . 
     
     
         5 . A light absorption sensor, comprising:
 a pair of electrodes; and   a light absorbing layer between the pair of electrodes,   wherein the light absorbing layer includes a first organic material and a second organic material that forms a pn junction with the first organic material, and   wherein a difference between respective sublimation temperatures of the first organic material and the second organic material is about 0° C. to about 150° C., wherein each sublimation temperature of each given organic material is a temperature at which a weight reduction of 10% relative to an initial weight of the given organic material occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.   
     
     
         6 . The light absorption sensor of  claim 5 , wherein
 the first organic material is represented by Chemical Formula 1:   
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 1,
 X 1  and X 2  are each independently O or NR a , and 
 R 1  to R 4  and R a  are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a halogen, a cyano group, or any combination thereof, and 
 
         the second organic material is represented by Chemical Formula 2: 
       
       
         
           
           
               
               
           
         
         wherein, in Chemical Formula 2,
 X is O, S, Se, Te, SO, SO 2 , CR b R c , or SiR d R e , 
 Ar is a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more thereof, 
 Ar 1a  and Ar 2a  are each independently a substituted or unsubstituted C6 to C30 aryl(ene) group or a substituted or unsubstituted C3 to C30 heteroaryl(ene) group, 
 R 1a  to R 3a  and R b  to R e  are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, or any combination thereof, and 
 Ar 1a , Ar 2a , R 1a  and R 2a  are each independently present, or two adjacent ones of Ar 1a , Ar 2a , R 1a  or R 2a  are bonded to each other to form a ring.

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