Photoelectric conversion device and method of manufacturing photoelectric conversion device

Abstract

A method of manufacturing a photoelectric conversion device includes forming a photoelectric conversion unit in a first substrate, forming a first interconnection on a side of a first face of the first substrate, forming a pinning layer on a second face of the first substrate that is a light receiving face of the photoelectric conversion unit, forming a first opening in the pinning layer, forming an insulating layer on the pinning layer and in the first opening, and forming, in a region inside the first opening in a plan view, a second opening that penetrates the insulating layer and the first substrate and reaches the first interconnection.

What is claimed is: 
     
         1 . A method of manufacturing a photoelectric conversion device comprising:
 forming a photoelectric conversion unit in a first substrate;   forming a first interconnection on a side of a first face of the first substrate;   forming a pinning layer on a second face of the first substrate that is a light receiving face of the photoelectric conversion unit;   forming a first opening in the pinning layer;   forming an insulating layer on the pinning layer and in the first opening; and   forming, in a region inside the first opening in a plan view, a second opening that penetrates the insulating layer and the first substrate and reaches the first interconnection.   
     
     
         2 . The method of manufacturing a photoelectric conversion device according to  claim 1 ,
 wherein the first interconnection is an electrode pad, and   wherein the second opening is a pad opening reaching the electrode pad.   
     
     
         3 . The method of manufacturing a photoelectric conversion device according to  claim 1  further comprising:
 forming, in the second opening, a through electrode that is insulated from the first substrate and electrically connected to the first interconnection; and 
 forming, over the insulating layer, a second interconnection electrically connected to the through electrode. 
 
     
     
         4 . The method of manufacturing a photoelectric conversion device according to  claim 1  further comprising: forming a first interconnection structure layer on the side of the first face of the first substrate. 
     
     
         5 . The method of manufacturing a photoelectric conversion device according to  claim 4 , wherein the forming the first interconnection structure layer includes the forming the first interconnection. 
     
     
         6 . The method of manufacturing a photoelectric conversion device according to  claim 1  further comprising: bonding a second substrate including a second interconnection structure layer to the side of the first face of the first substrate. 
     
     
         7 . The method of manufacturing a photoelectric conversion device according to  claim 6 , wherein the second interconnection structure layer includes the first interconnection. 
     
     
         8 . The method of manufacturing a photoelectric conversion device according to  claim 1  further comprising: forming an isolation structure in the first substrate, wherein the isolation structure is disposed so as to surround the first opening in the plan view. 
     
     
         9 . The method of manufacturing a photoelectric conversion device according to  claim 8 , wherein the isolation structure is disposed so as to surround the second opening in the plan view. 
     
     
         10 . The method of manufacturing a photoelectric conversion device according to  claim 8 , wherein the isolation structure is disposed inside the second opening in the plan view. 
     
     
         11 . A photoelectric conversion device comprising:
 a first substrate having a first face and a second face and provided with a photoelectric conversion unit with the second face as a light receiving surface;   a first interconnection provided on a side of the first face of the first substrate;   a pinning layer provided on the second face of the first substrate and having a first opening;   an insulating layer provided on the pinning layer and in the first opening; and   a second opening that is provided in a region inside the first opening in a plan view, penetrates the insulating layer and the first substrate, and reaches the first interconnection.   
     
     
         12 . The photoelectric conversion device according to  claim 11 , wherein the pinning layer is not exposed to the second opening. 
     
     
         13 . The photoelectric conversion device according to  claim 11 ,
 wherein the first interconnection is an electrode pad, and   the second opening is a pad opening reaching the electrode pad.   
     
     
         14 . The photoelectric conversion device according to  claim 11  further comprising:
 a through electrode provided in the second opening, insulated from the first substrate, and electrically connected to the first interconnection; and 
 a second interconnection provided over the insulating layer and electrically connected to the through electrode. 
 
     
     
         15 . The photoelectric conversion device according to  claim 11  further comprising: a first interconnection structure layer provided on the side of the first face of the first substrate. 
     
     
         16 . The photoelectric conversion device according to  claim 15 , wherein the first interconnection structure layer includes the first interconnection. 
     
     
         17 . The photoelectric conversion device according to  claim 11  further comprising: a second substrate bonded to the side of the first face of the first substrate and including a second interconnection structure layer. 
     
     
         18 . The photoelectric conversion device according to  claim 17 , wherein the second interconnection structure layer includes the first interconnection. 
     
     
         19 . The photoelectric conversion device according to  claim 11  further comprising: an isolation structure provided in the first substrate, wherein the isolation structure is disposed so as to surround the first opening in the plan view. 
     
     
         20 . The photoelectric conversion device according to  claim 19 , wherein the isolation structure is disposed so as to surround the second opening in the plan view. 
     
     
         21 . The photoelectric conversion device according to  claim 19 , wherein the isolation structure is disposed inside the second opening in the plan view. 
     
     
         22 . The photoelectric conversion device according to  claim 19 , wherein the pinning layer includes an aluminum oxide film and/or a tantalum oxide film. 
     
     
         23 . A photoelectric conversion system comprising:
 the photoelectric conversion device according to  claim 11 ; and   a signal processing device configured to process a signal output from the photoelectric conversion device.   
     
     
         24 . A movable object comprising:
 the photoelectric conversion device according to  claim 11 ;   a distance information acquisition unit configured to acquire distance information to an object from a parallax image based on a signal from the photoelectric conversion device; and   a control unit configured to control the movable object based on the distance information.   
     
     
         25 . An equipment comprising:
 the photoelectric conversion device according to  claim 11 ; and   at least one of
 an optical device corresponding to the photoelectric conversion device, 
 a control device configured to control the photoelectric conversion device, 
 a processing device configured to process a signal output from the photoelectric conversion device, 
 a mechanical device that is controlled based on information obtained by the photoelectric conversion device, 
 a display device configured to display information obtained by the photoelectric conversion device, and 
 a storage device configured to store information obtained by the photoelectric conversion device.