Semiconductor manufacturing apparatus and control method thereof

Abstract

An apparatus includes first and second chip bonders. The first chip bonder includes a first holder, a first shaft, a first driver driving the first shaft, and a first pressure sensor detecting a first pressure at which the first driver presses a chip against a bonding target. The second chip bonder includes a second holder, a second shaft, a second driver driving the second shaft, and a second pressure sensor detecting a second pressure at which the second driver presses the chip against the bonding target. A storage stores a first set value of the first pressure and a second set value of the second pressure. A controller controls the first chip bonder to set the first pressure to be the first set value and controls the second chip bonder to set the second pressure to be the second set value.

1 . A semiconductor manufacturing apparatus comprising:
 a first chip bonder including a first holder configured to be capable of holding a first semiconductor chip, a first shaft configured to support the first holder, a first driver configured to drive the first shaft in a first direction that is from the first semiconductor chip toward a bonding target, and a first pressure sensor configured to detect a first pressure at which the first driver presses the first semiconductor chip against the bonding target via the first shaft;   a second chip bonder including a second holder configured to be capable of holding the first semiconductor chip, a second shaft configured to support the second holder, a second driver configured to drive the second shaft in the first direction, and a second pressure sensor configured to detect a second pressure at which the second driver presses the first semiconductor chip against the bonding target via the second shaft;   a storage configured to store therein a first set value of the first pressure and a second set value of the second pressure; and   a controller configured to control the first chip bonder to set the first pressure to be the first set value and control the second chip bonder to set the second pressure to be the second set value.   
     
     
         2 . The apparatus of  claim 1 , wherein the first and second drivers are pumps configured to drive the first and second shafts at gas pressures, respectively. 
     
     
         3 . The apparatus of  claim 1 , wherein
 the first shaft includes a first portion connected to the first holder and a second portion provided on a side of the first driver,   the second shaft includes a third portion connected to the second holder and a fourth portion provided on a side of the second driver,   the first pressure sensor is provided between the first portion and the second portion, and   the second pressure sensor is provided between the third portion and the fourth portion.   
     
     
         4 . The apparatus of  claim 1 , wherein
 the first shaft includes a first portion connected to the first holder and a second portion provided on a side of the first driver,   the second shaft includes a third portion connected to the second holder and a fourth portion provided on a side of the second driver,   the first chip bonder further includes a third pressure sensor provided between the first portion and the second portion and configured to detect a third pressure between the first portion and the second portion, and   the second chip bonder further includes a fourth pressure sensor provided between the third portion and the fourth portion and configured to detect a fourth pressure between the third portion and the fourth portion.   
     
     
         5 . The apparatus of  claim 1 , wherein the first and second pressure sensors are piezoelectric sensors each using a piezoelectric element or resistive sensors each using a strain gauge. 
     
     
         6 . The apparatus of  claim 4 , wherein
 the third pressure sensor is arranged between the first portion and the second portion at a crossing position with each of center axes of the first portion and the second portion, and   the fourth pressure sensor is arranged between the third portion and the fourth portion at a crossing position with each of center axes of the third portion and the fourth portion.   
     
     
         7 . The apparatus of  claim 4 , wherein the third and fourth pressure sensors are piezoelectric sensors each using a piezoelectric element or resistive sensors each using a strain gauge. 
     
     
         8 . The apparatus of  claim 1 , further comprising a pump configured to cause the first semiconductor chip to be absorbed to the first holder and the second holder. 
     
     
         9 . The apparatus of  claim 1 , wherein the first holder and the second holder are configured by rubber or ceramic. 
     
     
         10 . The apparatus of  claim 1 , further comprising an n-th (n is an integer greater than or equal to 3) chip bonder that includes an n-th holder configured to be capable of holding the first semiconductor chip, an n-th shaft configured to support the n-th holder, an n-th driver configured to drive the n-th shaft in the first direction, and an n-th pressure sensor configured to detect an n-th pressure at which the n-th driver presses the first semiconductor chip against the bonding target via the n-th shaft, wherein
 the storage stores therein the first set value to an n-th set value of the first pressure to the n-th pressure, and   the controller controls the first to n-th chip bonders to set the first to n-th pressures to be the first to n-th set values, respectively.   
     
     
         11 . The apparatus of  claim 10 , wherein the first to n-th chip bonders are arranged substantially evenly with respect to a surface of the first semiconductor chip. 
     
     
         12 . The apparatus of  claim 1 , wherein the controller determines an abnormality based on changes over time in the first and second pressures. 
     
     
         13 . The apparatus of  claim 1 , wherein
 the storage further stores therein a first threshold related to the first pressure and a second threshold related to the second pressure, and   the controller determines an abnormality when the first pressure drops below the first threshold or the second pressure drops below the second threshold during pressing of the first semiconductor chip.   
     
     
         14 . The apparatus of  claim 1 , wherein the first and second set values are set based on the first and second pressures measured for another semiconductor chip. 
     
     
         15 . A control method of a semiconductor manufacturing apparatus including: a first chip bonder that includes a first holder configured to be capable of holding a first semiconductor chip, a first shaft configured to support the first holder, and a first pressure sensor configured to detect a first pressure at which the first semiconductor chip is pressed against a bonding target via the first shaft; a second chip bonder that includes a second holder configured to be capable of holding the first semiconductor chip, a second shaft configured to support the second holder, and a second pressure sensor configured to detect a second pressure at which the first semiconductor chip is pressed against the bonding target via the second shaft; and a controller configured to control the first and second pressures, the method comprising
 controlling the first chip bonder to set the first pressure to be a first set value of the first pressure and controlling the second chip bonder to set the second pressure to be a second set value of the second pressure.   
     
     
         16 . The method of  claim 15 , wherein the first and second shafts press the first semiconductor chip against the bonding target at gas pressures, respectively. 
     
     
         17 . The method of  claim 15 , further comprising determining an abnormality based on changes over time in the first and second pressures during pressing of the first semiconductor chip against the bonding target. 
     
     
         18 . The method of  claim 17 , wherein the abnormality is determined based on transitional pressure decreases in the first and second pressures during pressurizing control until the first and second pressures reach the first and second set values, respectively, and during control of maintaining pressure values of the first and second pressures that have reached the first and second set values, respectively. 
     
     
         19 . The method of  claim 17 , wherein the controller determines the abnormality when the first pressure drops below a first threshold or the second pressure drops below a second threshold during pressing of the first semiconductor chip against the bonding target. 
     
     
         20 . The method of  claim 15 , wherein the first and second set values are set based on the first and second pressures measured for another semiconductor chip.