Semiconductor Device for driving a display and A Display driving device including the same

Abstract

A semiconductor device for driving a display according to the embodiment may include a first conductivity type base layer, a second conductivity type doping area on the first conductivity type base layer, a source area on the second conductivity type doping area, a drain area on the first conductivity type base layer, a gate insulating film disposed between the source area and the drain area, a gate electrode disposed on the gate insulating film and one or more device isolating areas disposed on the base layer. The active area including the second conductivity type doping area and the source area may include an active corner cut area in a corner area facing the drain area.

What is claimed is: 
     
         1 . A semiconductor device for driving a display comprising:
 a first conductivity type base layer;   a second conductivity type doping area disposed on the first conductivity type base layer;   a source area disposed on the second conductivity type doping area;   a drain area disposed on the first conductivity type base layer;   a gate insulating film disposed between the source area and the drain area;   a gate electrode disposed on the gate insulating film; and   one or more device isolating areas disposed on the base layer;   wherein an active area having the second conductivity type doping area and the source area comprises an active corner cut area in a corner area facing the drain area.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the active area comprises a first active area at a center of the gate electrode and a second active area at the active corner cut area. 
     
     
         3 . The semiconductor device according to  claim 2 , wherein a width of the first active area is larger than a width of the second active area. 
     
     
         4 . The semiconductor device according to  claim 2 , wherein the active corner cut area comprises a first active corner cut area disposed at an upper edge of the second active area facing the drain area, and
 a second active corner cut area disposed at a lower edge of the second active area facing the drain area.   
     
     
         5 . The semiconductor device according to  claim 2 , wherein a distance from the first active area to the drain area is shorter than a distance from the second active area to the drain area. 
     
     
         6 . The semiconductor device according to  claim 2 , wherein a distance from the first active area to the outside of the gate electrode in a direction of the drain area is shorter than a distance from the second active area to the gate electrode in a direction of the drain area. 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the active corner cut area comprises a right-angled triangle shape. 
     
     
         8 . The semiconductor device according to  claim 7 , wherein the active corner cut area comprises a first side and a second side perpendicular to the first side of the active corner cut area, and
 wherein a length of the first side and a length of the second side are the same.   
     
     
         9 . The semiconductor device according to  claim 1 , wherein the active area does not comprise the active corner cut area in the corner area facing the source area. 
     
     
         10 . A display driving device comprising the semiconductor device for driving the display according to  claim 1 . 
     
     
         11 . A semiconductor device for driving a display comprising:
 a first conductivity type base layer;   a second conductivity type doping area disposed on the first conductivity type base layer;   a source area disposed on the second conductivity type doping area;   a drain area disposed on the first conductivity type base layer;   a gate insulating film disposed between the source area and the drain area; and   a gate electrode disposed on the gate insulating film;   wherein the second conductivity type doping area comprises an active corner cut area in a corner area facing the drain area in a plan view.   
     
     
         12 . The semiconductor device according to  claim 11 , wherein an active area comprises the second conductivity type doping area and the source area, and
 wherein the active area comprises a first active area at a first region vertically overlapping the gate electrode and a second active area at a second region laterally overlapping the active corner cut area.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein a lateral width of the first active area is larger than a lateral width of the second active area. 
     
     
         14 . The semiconductor device according to  claim 12 , wherein the active corner cut area comprises a first active corner cut area disposed at an upper edge of the second active area facing the drain area, and
 a second active corner cut area disposed at a lower edge of the second active area facing the drain area.   
     
     
         15 . The semiconductor device according to  claim 12 , wherein a distance from the first active area to the drain area is shorter than a distance from the second active area to the drain area. 
     
     
         16 . The semiconductor device according to  claim 12 , wherein a distance from the first active area to the outside of the gate electrode in a direction of the drain area is shorter than a distance from the second active area to the gate electrode in a direction of the drain area. 
     
     
         17 . The semiconductor device according to  claim 11 , wherein the active corner cut area comprises a right-angled triangle shape. 
     
     
         18 . The semiconductor device according to  claim 17 , wherein the active corner cut area comprises a first side and a second side perpendicular to the first side of the active corner cut area, and
 wherein a length of the first side and a length of the second side are the same.   
     
     
         19 . The semiconductor device according to  claim 11 , wherein the active area does not comprise the active corner cut area in the corner area facing the source area. 
     
     
         20 . A display driving device comprising the semiconductor device for driving the display according to  claim 11 .