Optoelectronic device

Abstract

The present disclosure provides an optoelectronic device including a base, a light-emitting chip, an interposer, a wavelength conversion member and a wall portion. The base includes a base portion and a conductive portion, and the conductive portion comprises a plurality of coupling surfaces. The base portion covers the conductive portion and exposes the coupling surfaces. The light-emitting chip and the interposer are provided on the base, and having a top surface. The interposer covers the light-emitting chip and exposes the top surface. The wavelength conversion member covers the light-emitting chip and the interposer, and the wavelength conversion member includes an emitting surface. The wall portion is provided on the base. The wall portion covers the interposer and the wavelength conversion member, and exposes the emitting surface of the wavelength conversion member. The emitting surface is parallel to the top surface, and perpendicular to the coupling surfaces.

What is claimed is: 
     
         1 . An optoelectronic device, comprising:
 a base including a conductive portion comprising a plurality of coupling surfaces, and a base portion which covers the conductive portion and exposes the plurality of coupling surfaces;   a light-emitting chip provided on the base, and having a top surface;   an interposer provided on the base, covering the light-emitting chip, and exposing the top surface;   a wavelength conversion member covering the light-emitting chip and the interposer, and having an emitting surface; and   a wall portion provided on the base covering the interposer and the wavelength conversion member, and exposing the emitting surface,   wherein the emitting surface is parallel to the top surface, and perpendicular to the plurality of coupling surfaces.   
     
     
         2 . The optoelectronic device as claimed in  claim 1 , wherein the optoelectronic device has an upper surface, a lower surface opposite to the upper surface, and a plurality of side surfaces arranged between the upper surface and the lower surface, the plurality of side surfaces has only one side surface wherein the plurality of coupling surfaces is arranged. 
     
     
         3 . The optoelectronic device as claimed in  claim 2 , wherein the only one side surface comprises a surface of the base portion, the plurality of coupling surfaces of the conductive portion, and a surface of the wall portion. 
     
     
         4 . The optoelectronic device as claimed in  claim 2 , wherein the lower surface comprises a surface of the base portion, and the upper surface comprises a surface of the wavelength conversion member and a surface of the wall portion. 
     
     
         5 . The optoelectronic device as claimed in  claim 1 , wherein the wavelength conversion member directly contacts the top surface of the light-emitting chip. 
     
     
         6 . The optoelectronic device as claimed in  claim 5 , wherein the wavelength conversion member further directly contacts a lateral surface of the light-emitting chip. 
     
     
         7 . The optoelectronic device as claimed in  claim 1 , wherein the light-emitting chip includes III-V compound material. 
     
     
         8 . The optoelectronic device as claimed in  claim 1 , wherein the interposer and the wall portion have bottom surfaces which are not flush with each other. 
     
     
         9 . An optoelectronic device, comprising:
 a base including a conductive portion which comprises a plurality of coupling surfaces, and a base portion which covers the conductive portion and exposes the plurality of coupling surfaces;   a plurality of light-emitting chips provided on the base, and having a plurality of top surfaces, wherein the plurality of top surfaces belongs to the plurality of light-emitting chips, respectively;   an interposer provided on the base, covering the plurality of light-emitting chips, and exposing the plurality of top surfaces;   a wavelength conversion member covering the plurality of light-emitting chips and the interposer, and having an emitting surface; and   a wall portion provided on the base, covering the interposer and the wavelength conversion member, and exposing the emitting surface,   wherein the emitting surface is parallel to the plurality of top surfaces, and perpendicular to the plurality of coupling surfaces.   
     
     
         10 . The optoelectronic device as claimed in  claim 9 , wherein the optoelectronic device has an upper surface, a lower surface opposite to the upper surface, and a plurality of side surfaces arranged between the upper surface and the lower surface, the plurality of side surfaces has only one side surface wherein the plurality of coupling surfaces is arranged. 
     
     
         11 . The optoelectronic device as claimed in  claim 10 , wherein the only one side surface comprises a surface of the base portion, the plurality of coupling surfaces of the conductive portion, and a surface of the wall portion. 
     
     
         12 . The optoelectronic device as claimed in  claim 10 , wherein the lower surface comprises a surface of the base portion, and the upper surface comprises a surface of the wavelength conversion member and a surface of the wall portion. 
     
     
         13 . The optoelectronic device as claimed in  claim 9 , wherein the plurality of light-emitting chips each includes III-V compound material. 
     
     
         14 . The optoelectronic device as claimed in  claim 9 , wherein the interposer and the wall portion have bottom surfaces which are not flush with each other. 
     
     
         15 . An optoelectronic device, comprising:
 a base including a conductive portion comprising a plurality of coupling surfaces, and a base portion which covers the conductive portion and exposes the plurality of coupling surfaces;   a plurality of light-emitting chips provided on the base, and having a plurality of top surfaces, wherein the plurality of top surfaces belongs to the plurality of light-emitting chips, respectively;   an interposer provided on the base, covering the plurality of light-emitting chips, and exposing the plurality of top surfaces;   a plurality of wavelength conversion members covering the plurality of light-emitting chips and the interposer, and having a plurality of emitting surfaces, wherein the plurality of emitting surfaces is arranged above the plurality of light-emitting chips, respectively; and   a wall portion provided on the base, covering the interposer and the plurality of wavelength conversion members, and exposing the plurality of emitting surfaces which is separated from each other by the wall portion;   wherein the plurality of emitting surfaces is parallel to the plurality of top surfaces, and perpendicular to the plurality of coupling surfaces.   
     
     
         16 . The optoelectronic device as claimed in  claim 15 , wherein the optoelectronic device has an upper surface, a lower surface opposite to the upper surface, and a plurality of side surfaces arranged between the upper surface and the lower surface, the plurality of side surfaces has only one side surface wherein the plurality of coupling surfaces is arranged. 
     
     
         17 . The optoelectronic device as claimed in  claim 16 , wherein the only one side surface comprises a surface of the base portion, the plurality of coupling surfaces of the conductive portion, and a surface of the wall portion. 
     
     
         18 . The optoelectronic device as claimed in  claim 16 , wherein the lower surface comprises a surface of the base portion, and the upper surface comprises a surface of the plurality of wavelength conversion members, and a surface of the wall portion. 
     
     
         19 . The optoelectronic device as claimed in  claim 15 , wherein the plurality of light-emitting chips each includes III-V compound material. 
     
     
         20 . The optoelectronic device as claimed in  claim 15 , wherein the interposer and the wall portion have bottom surfaces which are not flush with each other.