System and Method for Generating Electrical Energy from A Volume of Water

Abstract

The present invention relates to a system (100) for generating electrical energy from a volume of water. The system (100) comprises a base layer (20) and a collection layer (60). The base layer (20) includes a substrate (30) with a plurality of cavities (40) dimensioned to hold water, each cavity having a surface coating (50). Inlet (60a) and outlet (60b) channels facilitate water circulation through the cavities, enabling the formation of a charge-separated zone. The collection layer (40) includes conductive elements (70) aligned with the charge-separated zone to extract electrical energy by creating a potential difference. The layers are assembled to ensure precise alignment and are sealed to prevent leakage. A low molar ion concentration aqueous solution (85) sustains the charge-separated zone (80), allowing efficient and continuous energy extraction when connected to an external load.

We claim: 
     
         1 . A system ( 100 ) for generating electrical energy from a volume of water, the system ( 100 ) comprising:
 a base layer ( 20 ) including:
 a substrate ( 30 ) with a plurality of cavities ( 40 ) dimensioned to hold water, the inner surface of each cavity ( 40 ) being applied with a surface coating ( 50 ), the plurality of cavities ( 40 ) being configured to create a charge-separated zone when in contact with water; 
   a collection layer ( 60 ) to extract electrical energy from the charge-separated zone ( 80 ), the collection layer including:
 an inlet ( 60   a ) and an outlet ( 60   b ) to facilitate the initial introduction of a low molar ion concentration aqueous solution ( 85 ) into the plurality of cavities ( 40 ), wherein the aqueous solution ( 85 ) remains within the cavities ( 40 ) after filling; 
 a plurality of conductive elements ( 70 ) including negative electrodes ( 70   a ) and positive electrodes ( 70   b ); and 
 a plurality of electrical connections coupled to the conductive elements ( 70 ) to form a potential difference, 
   wherein the base layer ( 20 ) and the collection layer ( 60 ) are assembled together by aligning the conductive elements ( 70 ) of the collection layer ( 60 ) with the substrate ( 30 ) of the base layer ( 20 ) and a low molar ion concentration aqueous solution ( 85 ) is allowed to flow through the inlet ( 60   a ) and outlet ( 60   b ) to create the charge-separated zone adjacent to the base layer ( 20 ), wherein the negative electrodes ( 70   a ) of the collection layer ( 60 ) are configured to be positioned within the charge-separated zone and the positive electrodes ( 70   b ) being positioned within the surrounding water ( 90 ) and the charge-separated zone ( 80 ) enables electrical energy to be extracted through the conductive elements ( 70 ) when connected to an external load.   
     
     
         2 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) includes a hydrophilic surface selected from the group consisting of Nafion, Aculon coatings, Acrylate gels, Polydimethylsiloxane (PDMS), Polyethylene Glycol (PEG), Starch-based coatings, Mica coatings, Polyvinyl Alcohol (PVA), Titanium Dioxide (TiO 2 ), Silicon Dioxide (SiO 2 ), Si—OH coatings, and 3-Aminopropyltriethoxysilane (APTES) coatings. 
     
     
         3 . The system ( 100 ) as claimed in  claim 1 , wherein the collection layer ( 60 ) includes P-type doped regions ( 22 ) and N-type doped regions ( 23 ) and the negative electrodes ( 70   a ) are connected to P-type doped regions ( 22 ) of the collection layer ( 60 ) and positive electrodes ( 70   b ) are connected to N-type doped regions ( 23 ) of the collection layer ( 60 ). 
     
     
         4 . The system ( 100 ) as claimed in  claim 1 , wherein the plurality of cavities ( 40 ) in the substrate ( 30 ) has dimensions between 500-700 microns. 
     
     
         5 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer ( 20 ) is cleaned using a standard cleaning process and by forming cavity patterns on the structured surface of the base layer ( 20 ) using photolithography. 
     
     
         6 . The system ( 100 ) as claimed in  claim 1 , wherein the fabrication of base layer ( 20 ) includes etching the cavity patterns using Deep Reactive Ion Etching (DRIE) to form cavities ( 40 ) with a depth of 200 microns. 
     
     
         7 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer ( 20 ) is placed in a vacuum chamber to remove solvents from the Nafion solution and to form a surface coating ( 50 ) on the inner surfaces of the cavities ( 40 ) with a thickness of 1 micron. 
     
     
         8 . The system ( 100 ) as claimed in  claim 1 , inlet ( 60   a ) and outlet ( 60   b ) in the collection layer ( 60 ) is formed using Deep Reactive Ion Etching (DRIE). 
     
     
         9 . The system ( 100 ) as claimed in  claim 1 , wherein the collection layer ( 60 ) is oxidized to form an insulating silicon dioxide layer ( 33 ) over the doped regions ( 22 , 23 ) and the oxide layer ( 33 ) from selected regions is removed to define electrode formation areas and power output regions in the collection layer ( 60 ). 
     
     
         10 . The system ( 100 ) as claimed in  claim 1  wherein the selected regions of the collection layer ( 60 ) is deposited with a thin metallic layer of nickel or titanium. 
     
     
         11 . The system ( 100 ) as claimed in  claim 1  wherein the conductive elements ( 70 ) of the collection layer ( 60 ) are electroplated using copper and a thin gold layer onto the metallic regions to form a height of approximately 50 microns, with a permissible variation of ±5 microns. 
     
     
         12 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer ( 20 ) and collection layer ( 60 ) form a single-unit configuration ( 300 ), with a grid of 169 cavities, each cavity independently generating electrical energy. 
     
     
         13 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer ( 20 ) and the collection layer ( 60 ) are configured in a three-dimensional stacked configuration ( 400 ), with one or more intermediate layers. 
     
     
         14 . The system ( 100 ) as claimed in  claim 1 , wherein the collection layer ( 60 ) is configured in a high-density electrode configuration ( 500 ), including a closely spaced arrangement of positive and negative conductive elements ( 70 ). 
     
     
         15 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer is configured in a layered hydrophilic surface configuration ( 600 ), with pre-formed hydrophilic sheets are placed on the inner surfaces of the cavities ( 40 ). 
     
     
         16 . The system ( 100 ) as claimed in  claim 1 , wherein the base layer ( 20 ) and the collection layer ( 60 ) are configured in an ultra-high-density configuration ( 700 ), with cavities ( 40 ) of microscopic dimensions wherein the conductive elements ( 70 ) include nanostructured materials and the base layer ( 20 ) being fabricated with ultra-thin walls. 
     
     
         17 . The system ( 100 ) as claimed in  claim 1 , wherein the system ( 100 ) is fabricated on a silicon wafer platform scalable to larger diameters, including 6-inch, 8-inch, and 12-inch wafers, enabling batch production of multiple systems. 
     
     
         18 . The system ( 100 ) as claimed in  claim 1 , wherein the substrate ( 30 ) of the base layer ( 20 ) is fabricated from a material selected from the group consisting of silicon, glass, polymer-based materials, or other semiconductor substrates. 
     
     
         19 . The system ( 100 ) as claimed in  claim 1 , wherein the plurality of cavities ( 40 ) includes square, rectangular, hexagonal, circular, triangular, or polygonal geometries to improve packing efficiency and energy extraction. 
     
     
         20 . The system ( 100 ) as claimed in  claim 1 , wherein the cavities ( 40 ) are etched to a depth between 200 microns and 300 microns, based on the stability of the substrate and the capabilities of the Deep Reactive Ion Etching (DRIE) process. 
     
     
         21 . The system ( 100 ) as claimed in  claim 1 , wherein the substrate ( 30 ) is diced into chips having dimensions of 1 cm×1 cm, larger or smaller sizes, or a full wafer-sized configuration up to 7 cm×7 cm. 
     
     
         22 . The system ( 100 ) as claimed in  claim 2 , wherein the hydrophilic surface is formed using chemical treatments, molecular imprinting, or solvothermal deposition methods. 
     
     
         23 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises a starch-based hydrophilic coating, wherein the starch is applied by,
 cleaning the substrate ( 30 ) using RCA methods;   applying a silane coupling agent;   immersing the substrate ( 30 ) in a starch solution using vacuum-assisted infiltration; and   drying the substrate ( 30 ) at a controlled temperature to solidify the starch layer.   
     
     
         24 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises a mica-based coating, wherein the mica is applied by:
 treating the surface with oxygen plasma;   depositing a potassium silicate solution mixed with muscovite mica precursors in an autoclave at 250° C., and   annealing the substrate ( 30 ) at 400° C. in an inert atmosphere.   
     
     
         25 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises polyvinyl alcohol (PVA) applied via dip-coating or spray-coating, followed by curing at 50° C. to 70° C. for 1 to 2 hours. 
     
     
         26 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises polyethylene glycol (PEG) applied by immersing the substrate ( 30 ) in a PEG-silane solution, followed by curing at 100° C. to 120° C. 
     
     
         27 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises 3-Aminopropyltriethoxysilane (APTES) applied by:
 cleaning the substrate ( 30 ) with a piranha solution;   immersing the substrate ( 30 ) in an APTES-ethanol solution; and   baking the substrate ( 30 ) at 110° C.   
     
     
         28 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises titanium dioxide (TiO 2 ) applied via a sol-gel deposition technique, wherein a TiO 2  precursor solution is deposited onto the substrate ( 30 ) and cured at 450° C. to 500° C. 
     
     
         29 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises silicon dioxide (SiO 2 ), wherein a sol-gel process using tetraethyl orthosilicate (TEOS) in ethanol is applied to the substrate ( 30 ), followed by curing at 250° C. to 400° C. 
     
     
         30 . The system ( 100 ) as claimed in  claim 1 , wherein the surface coating ( 50 ) comprises Si—OH functional groups, wherein the substrate ( 30 ) is treated with:
 a piranha solution; 
 a hydroxylation process at 80° C., and 
 a final immersion in deionized water at 80° C. 
 
     
     
         31 . The system ( 100 ) as claimed in  claim 1 , wherein the conductive elements ( 70 ) are fabricated using metal sputtering through a photomask to eliminate Schottky effects and improve cost-effectiveness. 
     
     
         32 . The system ( 100 ) as claimed in  claim 1 , wherein walls of the cavity ( 40 ) include microstructure features, the walls are structured to enclose or encapsulate the negative electrodes ( 70   a ) within the microstructures to improve charge-separated ( 80 ) zone stability and charge separation efficiency. 
     
     
         33 . The system ( 100 ) as claimed in  claim 1 , wherein the system ( 100 ) is fabricated using three-dimensional (3D) printing techniques or in combination with microfabrication processes. 
     
     
         34 . A method ( 200 ) for fabricating a system ( 100 ) for generating electrical energy from a volume of water, the method ( 200 ) comprising steps of:
 fabricating a base layer ( 20 ) by forming a substrate ( 30 ) with a plurality of cavities ( 40 ) dimensioned to hold water;   applying a surface coating ( 50 ) to the substrate ( 30 ) to induce the formation of a charge-separated zone ( 80 ) when contact with water;   fabricating a collection layer ( 60 ) by forming conductive elements ( 70 ) including negative electrodes ( 70   a ) and positive electrodes ( 70   b );   forming electrical connections to couple the conductive elements ( 70 ) for establishing a potential difference;   assembling the base layer ( 20 ) and the collection layer ( 60 ) by aligning the conductive elements ( 70 ) of the collection layer ( 60 ) with the substrate ( 30 ) of the base layer ( 20 ) and bonding the base layer ( 20 ) and collection layer ( 60 ) using an adhesive ( 44 ) to form a sealed interface; and   allowing a low molar ion concentration aqueous solution ( 85 ) to flow through an inlet ( 60   a ) and outlet ( 60   b ) on the collection layer ( 60 ) to create the charge-separated zone ( 80 ),   wherein the charge-separated zone ( 80 ) thus created enables electrical energy to be extracted through the conductive elements ( 70 ) when connected to an external load.   
     
     
         35 . The method ( 200 ) as claimed in  claim 34 , wherein fabricating the base layer ( 20 ) comprises the steps of:
 cleaning the base layer ( 20 ) using a standard cleaning process;   forming cavity patterns on the structured surface of the base layer ( 20 ) using photolithography;   etching the cavity patterns into the base layer ( 20 ) using Deep Reactive Ion Etching (DRIE) to form cavities with a depth of 200 microns;   applying a surface coating ( 50 ) by depositing a Nafion solution onto the cavities ( 40 );   placing the base layer ( 20 ) in a vacuum chamber to remove solvents from the Nafion solution and form a surface coating ( 50 ) on the inner surfaces of the cavities ( 40 ) with a thickness of 1 micron; and   repeating the application of the Nafion solution until the required thickness is achieved.   
     
     
         36 . The method ( 200 ) as claimed in  claim 34 , wherein fabricating the collection layer ( 60 ) comprises the steps of:
 doping predefined tracks of the collection layer ( 60 ) with P-type dopants to form negative electrode regions and N-type dopants to form positive electrode regions;   oxidizing the collection layer ( 60 ) to form an insulating silicon dioxide layer ( 33 ) over the doped regions;   removing the oxide layer ( 33 ) from selected regions to define electrode formation areas and power output regions;   depositing a thin metallic layer of nickel or titanium onto the selected regions;   electroplating copper onto the metallic regions to form conductive elements ( 70 ) with a height of 50 microns; and   electroplating a thin gold layer onto the conductive elements ( 70 ).