Display panel and manufacturing method of the same

Abstract

A display panel including a base layer, a transistor on the base layer and including a semiconductor pattern, a first connection electrode connected to the semiconductor pattern, a sensing line at a same layer as the first connection electrode, a first insulating layer on the transistor and the first connection electrode, a second insulating layer on the first insulating layer, a first electrode on the second insulating layer and connected to the connection electrode through a first through-hole, an additional electrode on the second insulating layer, the additional electrode being spaced from the first electrode in a plan view, and connected to the sensing line through a second through-hole, and a sensing pattern on the first insulating layer, the sensing pattern being electrically connected to the first electrode and the additional electrode, and including silicon.

What is claimed is: 
     
         1 . A display panel comprising:
 a base layer;   a transistor on the base layer and comprising a semiconductor pattern;   a first connection electrode connected to the semiconductor pattern;   a sensing line at a same layer as the first connection electrode;   a first insulating layer on the transistor and the first connection electrode;   a second insulating layer on the first insulating layer;   a first electrode on the second insulating layer and connected to the first connection electrode through a first through-hole;   an additional electrode on the second insulating layer, the additional electrode being spaced from the first electrode in a plan view, and connected to the sensing line through a second through-hole; and   a sensing pattern on the first insulating layer, the sensing pattern being electrically connected to the first electrode and the additional electrode, and comprising silicon.   
     
     
         2 . The display panel of  claim 1 , wherein a light transmittance of the sensing pattern in a visible light wavelength range is about 10% or more. 
     
     
         3 . The display panel of  claim 1 , further comprising a gate insulating pattern layer on the semiconductor pattern,
 wherein each of the first connection electrode and the sensing line is on the gate insulating pattern layer.   
     
     
         4 . The display panel of  claim 3 , wherein the transistor further comprises a gate electrode on the gate insulating pattern layer. 
     
     
         5 . The display panel of  claim 4 , wherein the first connection electrode, the sensing line, and the gate electrode comprise a same material. 
     
     
         6 . The display panel of  claim 1 , wherein the sensing pattern further comprises nitrogen. 
     
     
         7 . The display panel of  claim 1 , further comprising:
 an intermediate layer on the first electrode and comprising an emission layer; and   a second electrode on the intermediate layer.   
     
     
         8 . The display panel of  claim 1 , wherein the first electrode and the additional electrode are spaced from each other along a first direction, and
 a width of the first electrode in the first direction is greater than a width of the additional electrode in the first direction.   
     
     
         9 . The display panel of  claim 8 , wherein a distance between the first electrode and the additional electrode in the first direction is greater than the width of the additional electrode in the first direction. 
     
     
         10 . The display panel of  claim 8 , wherein a length of the first electrode in a second direction crossing the first direction is substantially the same as a length of the additional electrode in the second direction. 
     
     
         11 . The display panel of  claim 1 , wherein each of the first through-hole and the second through-hole passes through each of the first insulating layer, the second insulating layer, and the sensing pattern. 
     
     
         12 . The display panel of  claim 11 , wherein each of the first through-hole and the second through-hole includes a plurality of through-holes. 
     
     
         13 . The display panel of  claim 11 , wherein the first electrode and the additional electrode are spaced from each other along a first direction, and
 wherein each of the first through-hole and the second through-hole includes:
 a long side extending in a second direction crossing the first direction, and 
 a short side extending in the first direction. 
   
     
     
         14 . The display panel of  claim 1 , further comprising:
 a lower insulating layer between the base layer and the transistor; and   a plurality of conductive patterns between the lower insulating layer and the base layer and spaced from each other in a plan view,   wherein at least a portion of the plurality of conductive patterns is electrically connected to the first connection electrode.   
     
     
         15 . The display panel of  claim 1 , further comprising a pixel-defining layer on the second insulating layer and having a pixel opening located therein and exposing at least a portion of the first electrode,
 wherein the additional electrode is covered with the pixel-defining layer.   
     
     
         16 . The display panel of  claim 1 , wherein a light transmittance of the second insulating layer in a visible light wavelength range is about 80% or more. 
     
     
         17 . A display panel comprising:
 a base layer;   a transistor on the base layer and comprising a semiconductor pattern;   a first connection electrode connected to the semiconductor pattern;   a sensing line spaced from the first connection electrode in a plan view;   a first insulating layer on the transistor and the first connection electrode;   a second insulating layer on the first insulating layer;   a light-emitting element on the second insulating layer and electrically connected to the first connection electrode;   an additional electrode on the second insulating layer and connected to the sensing line; and   a sensing pattern on the first insulating layer,   wherein the light-emitting element comprises:
 a first electrode on the second insulating layer, connected to the first connection electrode, and spaced from the additional electrode in a plan view; 
 an emission layer on the first electrode; and 
 a second electrode on the emission layer, and 
   wherein a portion of each of the first electrode and the additional electrode is in a through-hole in the sensing pattern.   
     
     
         18 . The display panel of  claim 17 , further comprising a pixel-defining layer on the second insulating layer and having a pixel opening defined therein and exposing at least a portion of the first electrode,
 wherein the additional electrode is covered with the pixel-defining layer.   
     
     
         19 . A manufacturing method of a display panel, the manufacturing method comprising:
 forming a semiconductor pattern on a base layer;   forming a gate insulating pattern layer covering a portion of the semiconductor pattern;   forming a first connection electrode and a sensing line on the gate insulating pattern layer;   forming a first insulating layer covering the first connection electrode and the sensing line;   forming a sensing pattern comprising silicon on the first insulating layer;   forming a second insulating layer covering the sensing pattern;   forming each of a first through-hole and a second through-hole passing through the first insulating layer, the sensing pattern, and the second insulating layer; and   forming, on the second insulating layer, a first electrode connected to the first connection electrode through the first through-hole, and an additional electrode connected to the sensing line through the second through-hole.   
     
     
         20 . The manufacturing method of  claim 19 , wherein in the forming of the sensing pattern, nitrogen (N 2 ) gas and silane (SiH 4 ) gas are provided, and
 a ratio of the nitrogen gas to the silane gas is about 4.0 to about 10.