Light Emitting Diode and Display Device Including the Same

Abstract

A light emitting diode includes a base layer, a first semiconductor layer surrounding a side surface of the base layer, a first electrode on a first surface of the first semiconductor layer, the first electrode electrically connected with the first semiconductor layer, and a second electrode on a second surface of the first semiconductor layer that is opposite to the first surface, the second electrode electrically connected with the first semiconductor layer, wherein the first electrode and the second electrode overlap each other.

What is claimed is: 
     
         1 . A light emitting diode, comprising:
 a base layer;   a first semiconductor layer surrounding a side surface of the base layer;   a first electrode on a first surface of the first semiconductor layer, the first electrode electrically connected with the first semiconductor layer; and   a second electrode on a second surface of the first semiconductor layer that is opposite to the first surface, the second electrode electrically connected with the first semiconductor layer,   wherein the first electrode and the second electrode overlap each other.   
     
     
         2 . The light emitting diode of  claim 1 , wherein:
 the first electrode covers an entire first surface of the base layer;   the first electrode covers a partial area of the first surface of the first semiconductor layer;   the second electrode covers an entire second surface of the base layer, the second surface of the base layer being opposite to the first surface of the base layer; and   the second electrode covers a partial area of the second surface of the first semiconductor layer.   
     
     
         3 . The light emitting diode of  claim 1 , wherein a surface of the base layer and the second surface of the first semiconductor layer are located on a same plane. 
     
     
         4 . The light emitting diode of  claim 1 , further comprising:
 an active layer surrounding a side surface of the first semiconductor layer;   a second semiconductor layer surrounding a side surface of the active layer;   a third electrode on a first surface of the second semiconductor layer, the third electrode electrically connected with the second semiconductor layer; and   a fourth electrode on a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer, the fourth electrode electrically connected with the second semiconductor layer,   wherein the third electrode and the fourth electrode overlap each other.   
     
     
         5 . The light emitting diode of  claim 4 , wherein the second semiconductor layer includes a first region having a first thickness and a second region having a second thickness that is smaller than the first thickness, and the first region is between the second region and the active layer. 
     
     
         6 . The light emitting diode of  claim 5 , wherein a thickness of the base layer, a thickness of the first semiconductor layer, and a thickness of the first region of the second semiconductor layer are all same. 
     
     
         7 . The light emitting diode of  claim 5 , wherein the third electrode and the fourth electrode are on the second region. 
     
     
         8 . The light emitting diode of  claim 4 , wherein a thickness of the base layer, a thickness of the first semiconductor layer, and a thickness of the second semiconductor layer are all same. 
     
     
         9 . The light emitting diode of  claim 4 , further comprising:
 a first protective layer that exposes the first and third electrodes, the first protective layer covering the first surface of the first semiconductor layer, a first surface of the active layer, and a first surface of the second semiconductor layer; and   a second protective layer that exposes the second and fourth electrodes, the second protective layer covering the second surface of the first semiconductor layer, a second surface of the active layer that is opposite to the first surface of the active layer, and a second surface of the second semiconductor layer that is opposite to the first surface of the second semiconductor layer.   
     
     
         10 . The light emitting diode of  claim 4 , wherein
 a first region of the light emitting diode above a reference line and a second region of the light emitting diode below the reference line are symmetrical, the reference line passing through a center of the base layer and parallel to a surface of the base layer.   
     
     
         11 . The light emitting diode of  claim 4 , wherein a first region of the light emitting diode at a first side of a reference line and a second region of the light emitting diode at a second side of the reference line are symmetrical, the reference line passing through a center of the base layer and perpendicular to a surface of the base layer. 
     
     
         12 . The light emitting diode of  claim 1 , wherein the base layer comprises an undoped material. 
     
     
         13 . The light emitting diode of  claim 1 , wherein the base layer has a cylindrical shape. 
     
     
         14 . A display device, comprising:
 a common voltage line;   a thin film transistor on a substrate; and   a light emitting diode on the substrate, the light emitting diode including a first semiconductor layer, a second semiconductor layer surrounding a side surface of the first semiconductor layer, a first electrode electrically connected with the first semiconductor layer, a second electrode electrically connected with the first semiconductor layer, a third electrode electrically connected with the second semiconductor layer, and a fourth electrode electrically connected with the second semiconductor layer,   wherein one of the first electrode and the second electrode is electrically connected with the thin film transistor through a first connection electrode, and   one of the third electrode and the fourth electrode is electrically connected with the common voltage line through a second connection electrode.   
     
     
         15 . The display device of  claim 14 , wherein another one of the first electrode and the second electrode that is not electrically connected with the thin film transistor is floating and another one of the third electrode and the fourth electrode that is not electrically connected with the common voltage line is floating. 
     
     
         16 . A light emitting diode, comprising:
 a base layer including a first surface and a second surface opposite to the first surface of the base layer;   a first semiconductor layer including a first surface and a second surface opposite to the first surface of the first semiconductor layer, the first semiconductor layer in contact with a side surface of the base layer and surrounding the side surface of the base layer, the first surface of the first semiconductor layer located on a same plane as the first surface of the base layer;   an active layer including a first surface and a second surface opposite to the first surface of the active layer, the active layer in contact with a side surface of the first semiconductor layer and surrounding the side surface of the first semiconductor layer, the first surface of the active layer located on the same plane as the first surface of the first semiconductor layer;   a second semiconductor layer including a first surface and a second surface opposite to the first surface of the second semiconductor layer, the second semiconductor layer in contact with a side surface of the active layer and surrounding the side surface of the active layer, the first surface of the second semiconductor layer located on the same plane as the first surface of the active layer;   a first pair of overlapping electrodes on the first surface and the second surface of the first semiconductor layer and the first surface and the second surface of the base layer, the first pair of overlapping electrodes electrically connected with the first semiconductor layer; and   a second pair of overlapping electrodes on the first surface and the second surface of the second semiconductor layer, the second pair of overlapping electrodes electrically connected with the second semiconductor layer.   
     
     
         17 . The display device of  claim 16 , wherein:
 a first electrode of the first pair of overlapping electrodes is on the first surface of the first semiconductor layer;   a second electrode of the first pair of overlapping electrodes is on the second surface of the first semiconductor layer;   a first electrode of the second pair of overlapping electrodes is on the first surface of the second semiconductor layer; and   a second electrode of the second pair of overlapping electrodes is on the second surface of the second semiconductor layer.   
     
     
         18 . The display device of  claim 16 , wherein:
 the second surface of the first semiconductor layer is located on a same plane as the second surface of the base layer;   the second surface of the active layer is located on the same plane as the second surface of the first semiconductor layer; and   the second surface of the second semiconductor layer is located on the same plane as the second surface of the active layer.   
     
     
         19 . The light emitting diode of  claim 16 , wherein:
 a first electrode of the first pair of overlapping electrodes covers an entirety of the first surface of the base layer and a portion of the first surface of the first semiconductor layer;   a second electrode of the first pair of overlapping electrodes covers an entirety of the second surface of the base layer and a portion of the second surface of the first semiconductor layer;   a first electrode of the second pair of overlapping electrodes covers a portion of the first surface of the second semiconductor layer; and   a second electrode of the second pair of overlapping electrodes covers a portion of the second surface of the second semiconductor layer.   
     
     
         20 . The light emitting diode of  claim 16 , wherein the second semiconductor layer includes a first region having a first thickness and a second region having a second thickness that is smaller than the first thickness, and the first region is between the second region and the active layer.