Die and conductive vias embedded in a substrate

Abstract

An apparatus includes a substrate core, which has a first height between a first surface and a second surface opposite the first surface. A die is within the substrate core. The die may include a deep trench capacitor. The die has a second height between a first side of the die and a second side opposite the first side. The first height is greater than the second height. A plurality of conductive vias extend from a plurality of conductive contacts at the first side of the die to the first surface of the substrate core. A material comprising a dielectric is disposed over the die and encapsulates the plurality of conductive vias. In some embodiments, a bond film is in contact with the second side of the die.

What is claimed is: 
     
         1 . An apparatus, comprising:
 a substrate core comprising a first height between a first surface and a second surface opposite the first surface;   a die within the substrate core comprising a second height between a first side and a second side opposite the first side, wherein the first height is greater than the second height;   a plurality of conductive vias extending from a plurality of conductive contacts at the first side of the die to the first surface; and   a material comprising a dielectric over the die and encapsulating the plurality of conductive vias.   
     
     
         2 . The apparatus of  claim 1 , wherein the die comprises a deep trench capacitor. 
     
     
         3 . The apparatus of  claim 1 , wherein the plurality of conductive vias span a distance from the first side of the die to the first surface of the substrate core, the first height is greater than the second height by a height difference, and the distance is equal to at least eighty percent of the height difference. 
     
     
         4 . The apparatus of  claim 1 , wherein the second side of the die is spaced away from a plane of the second surface of the substrate core, further comprising a bond film in contact with the second side of the die, the bond film comprising a polymer adhesive. 
     
     
         5 . The apparatus of  claim 1 , wherein the material comprising a dielectric comprises a side that is substantially coplanar with the second surface of the substrate core. 
     
     
         6 . The apparatus of  claim 1 , wherein the second side of the die is substantially coplanar with the second surface of the substrate core. 
     
     
         7 . The apparatus of  claim 1 , wherein the die comprises a sidewall between the first side and the second side, and the material comprising a dielectric is between the sidewall and the substrate core. 
     
     
         8 . The apparatus of  claim 1 , wherein the substrate core comprises a third surface between the first surface and the second surface, and the third surface comprises:
 a first region comprising a first average surface roughness;   a second region comprising a second average surface roughness; and   wherein the second average surface roughness is less than the first average surface roughness.   
     
     
         9 . The apparatus of  claim 1 , wherein the first surface is in a first plane, the substrate core comprises a third surface between the first surface and the second surface, wherein the third surface is perpendicular to the first plane and comprises:
 a first region in a second plane, wherein an angle between the first plane and the second plane is a non-ninety-degree angle; and   a second region substantially perpendicular to the first plane.   
     
     
         10 . The apparatus of  claim 1 , wherein the die is a first die, further comprising:
 an electrical routing structure on the first surface, the electrical routing structure comprising metallization features and an organic dielectric material; and   a second die coupled to the electrical routing structure, wherein the plurality of conductive vias are coupled with the electrical routing structure to couple the first die with the second die.   
     
     
         11 . The apparatus of  claim 1 , wherein the substrate core comprises an organic material. 
     
     
         12 . The apparatus of  claim 1 , wherein the substrate core comprises a glass. 
     
     
         13 . A system, comprising:
 a substrate core comprising a first thickness between a front side surface and a back side surface opposite the front side surface;   a die within the substrate core comprising a second thickness between a first side and a second side opposite the first side, wherein die comprises a deep trench capacitor, and the first thickness is greater than the second thickness by a thickness difference;   a plurality of conductive vias extending from a plurality of conductive contacts at the first side of the die to the front side surface; and   a second die electrically coupled to first metallization features in an electrical routing structure over the front side surface of the substrate core.   
     
     
         14 . The system of  claim 13 , further comprising a material comprising a dielectric over the die and encapsulating the plurality of conductive vias. 
     
     
         15 . The system of  claim 13 , wherein the second side of the die is spaced away from a plane of the back side surface of the substrate core, further comprising a bond film in contact with the second side of the die. 
     
     
         16 . The system of  claim 13 , wherein the plurality of conductive vias span a distance from the first side of the die to the front side surface of the substrate core, the first thickness is greater than the second thickness by a thickness difference, and the distance is equal to at least eighty percent of the thickness difference. 
     
     
         17 . The system of  claim 16 , further comprising a material comprising a dielectric over the die and encapsulating the plurality of conductive vias, wherein the material comprising a dielectric comprises a side that is substantially coplanar with the back side surface of the substrate core. 
     
     
         18 . A method comprising:
 receiving a workpiece comprising a substrate core, the substrate core comprising a first height between a first surface and a second surface opposite the first surface;   placing a first die within a hole in the substrate core, the first die comprising a second height between a first side and a second side opposite the first side, wherein die comprises a deep trench capacitor, and the first height is greater than the second height;   depositing a dielectric material over the first die; and   forming a plurality of conductive vias extending a distance from a plurality of conductive contacts at the first side of the die to the first surface.   
     
     
         19 . The method of  claim 18 , further comprising:
 building up, over the first surface of the substrate core, an electrical routing structure coupled to the plurality of conductive vias; and   attaching a second die to the electrical routing structure.   
     
     
         20 . The method of  claim 18 , further comprising forming the hole through the substrate core, wherein the forming of the hole comprises:
 forming the hole to a first depth using a mechanical cutting tool; and   forming the hole to a second depth using a laser, wherein the second depth is greater than the first depth.