Methods of forming indium molybdenum oxide layers and associated indium molybdenum oxide layers

Abstract

Methods of forming indium molybdenum oxide layers (IMO) by vapor deposition are provided. In some embodiments cyclical deposition processes for forming IMO layers comprise alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase indium precursor, a vapor phase molybdenum precursor, and one or more oxygen reactants.

What is claimed is: 
     
         1 . A method of forming an indium molybdenum oxide layer (IMO layer) on a substrate within a reaction chamber, the method comprising:
 performing a cyclical deposition process comprising a plurality of repeated deposition cycles, wherein a deposition cycle comprises;
 (a) contacting the substrate with a vapor phase indium precursor; 
 (b) contacting the substrate with a vapor phase molybdenum precursor; and 
 (c) contacting the substrate with an oxygen reactant. 
   
     
     
         2 . The method of  claim 1 , wherein the cyclical deposition process comprises an atomic layer deposition process. 
     
     
         3 . The method of  claim 2 , wherein the deposition cycle comprises an indium oxide sub-cycle. 
     
     
         4 . The method of  claim 3 , wherein the indium molybdenum oxide layer comprises a molybdenum doped indium oxide. 
     
     
         5 . The method of  claim 2 , wherein the deposition cycle comprises an indium oxide sub-cycle and a molybdenum oxide sub-cycle. 
     
     
         6 . The method of  claim 5 , wherein the oxygen reactant contacts the substrate after step (a), and after step (b). 
     
     
         7 . The method of  claim 6 , wherein the indium molybdenum oxide layer is a mixture of indium oxide and molybdenum oxide. 
     
     
         8 . The method of  claim 7 , where the indium oxide sub-cycle is performed in a first reaction chamber and the molybdenum oxide sub-cycle is performed in a second reaction chamber. 
     
     
         9 . The method of  claim 2 , wherein the substrate is heated to a substrate temperature is less than 250° C. 
     
     
         10 . The method of  claim 1 , wherein the indium molybdenum oxide layer has a molybdenum content between 0.001 atomic-% and 40 atomic-%. 
     
     
         11 . The method of  claim 1 , wherein the vapor phase indium precursor comprises a ligand selected from a group consisting of an alkyl, an alkylamino, an alkoxy, a halide, a cyclopentadienyl (Cp), an alkoxide, an amide, an amidinate, a guanidinate, a beta-diketonate, and a triazenude. 
     
     
         12 . The method of  claim 11 , wherein the vapor phase indium precursor is selected from the group consisting of trimethylindium, triethyllindium, ethyldimethylindium, InMe 2 (CH 2 CH 2 CH 2 NMe 2 ), InEt 2 (CH 2 CH 2 CH 2 NMe 2 ), InMe 2 (CH 2 CH 2 CH 2 NEt 2 ), InEt 2 (CH 2 CH 2 CH 2 NEt 2 ), InCl, InCl 3 , InMe 2 Cl, In(CpCH 2 CH 2 NMe 2 ), In(CpCH 2 CH 2 CH 2 NMe 2 ), InMe 2 (CpCH 2 CH 2 NMe 2 ), InMe 2 (CpCH 2 CH 2 CH 2 NMe 2 ), In(CpCH 2 CH 2 OMe), In(CpCH 2 CH 2 CH 2 OMe),. InMe 2 (CpCH 2 CH 2 OMe), InMe 2 (CpCH 2 CH 2 CH 2 OMe, tris(tert-pentoxy)indium(III). tris(tert-butoxy)indium(III), tris(isopropoxy)indium(III), In(dmap) 3 , In(dmamp) 3 , In(dmamb) 3 . InMe 2 (dmap), InMe 2 (dmamp), InMe 2 (dmamb), InEt 2 (dmap), InEt 2 (dmamp), InEt 2 (dmamb), In(dmamp) 2 (OiPr), InMe 2 (NMe 2 ), InMe 2 (NEt 2 ), InMe 2 (NEtMe), InEt 2 (NMe 2 ), InEt 2 (NEt 2 ), InEt 2 (NEtMe), InMe 2 [N(SiMe 3 ) 2 ], InEt 2 [N(SiMe 3 ) 2 ], In(sBu 2 AMD) 3 , In(tBu 2 AMD) 3 , In(iPr 2 AMD) 3 , or In(tPn 2 AMD) 3 , In(tBu 2 FMD) 3 , In(iPr 2 FMD) 3 , In(tPn 2 FMD) 3 , In(thd) 3 , In(acac) 3 , In(hfac) 3 , and tris(di-tert-butyltriazenido)indium(III) In(sBu 2 FMD) 3 , and an indium precursor represented by InR 2 L, where R is a methyl or ethyl ligand and where L is selected from tBu 2 AMD, iPr 2 AMD, tPn 2 AMD, sBu 2 AMD, tBu 2 FMD, iPr 2 FMD, tPn 2 FMD, and sBu 2 FMD. 
     
     
         13 . The method of  claim 1 , wherein the vapor phase molybdenum precursor is selected from the group consisting of Mo(CO) 6 , (Mo(NMe 2 ) 2 (N t Bu) 2 ), MoCl 4 O, MoO 2 (acac) 2 , Mo(EtBz) 2 , molybdenum isopropoxide, MoO 2 (acac) 2 , Mo(O i Pr)5, and MoCl 2 O 2 . 
     
     
         14 . The method of  claim 1 , wherein the oxygen reactant comprises one or more of oxygen (O), molecular oxygen (O 2 ), water (H 2 O), ozone (O 3 ), and hydrogen peroxide (H 2 O 2 ). 
     
     
         15 . An atomic layer deposition (ALD) process for forming an indium molybdenum oxide layer, the ALD process comprising a deposition cycle comprising alternately and sequentially contacting a substrate in a reaction chamber with trimethylindium, a molybdenum precursor, and an oxygen reactant, and repeating the deposition cycle until the indium molybdenum oxide layer has been formed to a desired thickness and composition. 
     
     
         16 . The process of  claim 15 , wherein the molybdenum precursor is selected from the group consisting of Mo(CO) 6 , Mo(NMe 2 ) 2 (N t Bu) 2 , MoCl 4 O, MoO 2 (acac) 2 , Mo(EtBz)2, molybdenum isopropoxide, MoO2(acac)2, Mo(O i Pr)5, and MoCl 2 O 2 . 
     
     
         17 . The process of  claim 16 , wherein the molybdenum precursor comprises Mo(NMe 2 ) 2 (N t Bu) 2 . 
     
     
         18 . The process of  claim 15 , wherein the indium molybdenum oxide layer comprises a molybdenum doped indium oxide with a molybdenum content between 0.001 atomic-% and 40 atomic-%. 
     
     
         19 . The process of  claim 15 , wherein the deposition cycle comprises an indium oxide sub-cycle and a molybdenum oxide sub-cycle, the indium oxide sub-cycle comprising contacting the substrate with trimethylindium and a first oxygen reactant, and the molybdenum oxide sub-cycle comprises contacting the substrate with the molybdenum precursor and a second oxygen reactant. 
     
     
         20 . The process of  claim 19 , wherein the first oxygen reactant comprises ozone (O 3 ) and the second oxygen reactant comprises water vapor (H 2 O).