Film forming method and film forming system

Abstract

A film forming method of forming a graphene film, includes: a process of preparing a substrate including a metal film; a first process of setting the substrate to a first temperature, generating plasma, and forming the graphene film having a first film thickness on the metal film using the plasma; a second process of setting the substrate to a second temperature higher than the first temperature, reducing a thickness of the graphene film to be less than the first film thickness while maintaining a continuity of the graphene film, and dissolving carbon atoms in solid solution in the metal film; and a third process of setting the substrate to a third temperature lower than the second temperature, increasing the thickness of the graphene film by precipitating the carbon atoms in the metal film at an interface between the metal film and the graphene film, and forming a modified graphene film.

What is claimed is: 
     
         1 . A film forming method of forming a graphene film, comprising:
 a process of preparing a substrate including a metal film;   a first process of setting the substrate to a first temperature, generating plasma by supplying a carbon-containing gas, and forming the graphene film having a first film thickness on the metal film using the generated plasma;   a second process of setting the substrate to a second temperature higher than the first temperature, reducing a thickness of the graphene film to be less than the first film thickness while maintaining a continuity of the graphene film, and dissolving carbon atoms in a solid solution in the metal film; and   a third process of setting the substrate to a third temperature lower than the second temperature, increasing the thickness of the graphene film by precipitating the carbon atoms in the metal film at an interface between the metal film and the graphene film, and forming a modified graphene film.   
     
     
         2 . The film forming method of  claim 1 , wherein the carbon-containing gas includes a plasma excitation gas, and
 wherein the first process includes generating the plasma by microwaves.   
     
     
         3 . The film forming method of  claim 2 , wherein the plasma excitation gas includes at least one of Ar gas or H 2  gas. 
     
     
         4 . The film forming method of  claim 1 , wherein the carbon-containing gas includes at least one of C 2 H 2  gas, C 2 H 4  gas, CH 4  gas, C 2 H 6  gas, C 3 H 8  gas, C 3 H 6  gas, CH 3 OH gas, or C 2 H 5 OH gas. 
     
     
         5 . The film forming method of  claim 1 , wherein the second process is performed in an atmosphere of an inert gas. 
     
     
         6 . The film forming method of  claim 5 , wherein the inert gas includes at least one of N 2  gas or Ar gas. 
     
     
         7 . The film forming method of  claim 1 , wherein the metal film includes at least one of Ru, Ni, Co, or Cu. 
     
     
         8 . The film forming method of  claim 1 , wherein the substrate includes an underlying film below the metal film, and
 wherein the underlying film includes any one of TiN and TaN.   
     
     
         9 . The film forming method of  claim 1 , wherein the first temperature is in a range of 300 degrees C. to 500 degrees C. 
     
     
         10 . The film forming method of  claim 1 , wherein the second temperature is in a range of 800 degrees C. to 1100 degrees C. 
     
     
         11 . The film forming method of  claim 1 , wherein the third temperature is in a range of 0 degrees C. to 400 degrees C. 
     
     
         12 . The film forming method of  claim 1 , wherein the first film thickness is in a range of 3 nm to 10 nm. 
     
     
         13 . A film forming system including a film forming apparatus and an annealing apparatus,
 wherein each of the film forming apparatus and the annealing apparatus includes:   a processing container capable of accommodating a substrate including a metal film; and   a controller,   wherein the controller of the film forming apparatus is configured to control the film forming apparatus to load the substrate into the processing container of the film forming apparatus,   wherein the controller of the film forming apparatus is configured to control the film forming apparatus to set the substrate to a first temperature, generate plasma by supplying a carbon-containing gas, and form a graphene film having a first film thickness on the metal film using the generated plasma,   wherein the controller of the annealing apparatus is configured to control the annealing apparatus to load the substrate into the processing container of the annealing apparatus,   wherein the controller of the annealing apparatus is configured to control the annealing apparatus to set the substrate to a second temperature higher than the first temperature, reduce a thickness of the graphene film to be less than the first film thickness while maintaining a continuity of the graphene film, and dissolve carbon atoms in a solid solution in the metal film, and   wherein the controller of the annealing apparatus is configured to control the annealing apparatus to set the substrate to a third temperature lower than the second temperature, increase the thickness of the graphene film by precipitating the carbon atoms in the metal film at an interface between the metal film and the graphene film, and form a modified graphene film.