Alloy for semiconductor production apparatuses, alloy member for semiconductor production apparatuses, and product

Abstract

An alloy for semiconductor production apparatuses according to the present invention contains Ta and Mo as a first element group. This alloy for semiconductor production apparatuses additionally contains, as a second element group, at least one element that is selected from a group consisting of Nb, Hf, Zr and W. If the total of the first element group and the second element group is taken as 100 at %, Ta is 10 at % or more but 35 at % or less (hereinafter expressed as 10-35 at % that is the elemental ratio thereof), Mo is 5-25 at %, and each one of the second elements is 10-35 at %. In addition, the adsorption energy of chloride ions or the like is 0.2 eV or less.

1 . An alloy for semiconductor production apparatuses, the alloy comprising:
 Ta and Mo as a first element group; and   at least one of types of elements selected from a group consisting of Nb, Hf, Zr, Ti, and W as a second element group, wherein   the alloy includes 10 at % or more and 35 at % or less of Ta, 5 at % or more and 25 at % or less of Mo, and 10 at % or more and 35 at % or less each of the elements of the second element group; and   adsorption energy of the alloy with CI ions and Br radicals is 0.2 eV or less.   
     
     
         2 . The alloy for semiconductor production apparatuses according to  claim 1 , the alloy further comprising:
 at least one of types of elements selected from a group consisting of Au, Pt, and Ag as a third element group, wherein   the alloy includes 10 at % or more and 25 at % or less each of the elements of the third element group; and   a total of the first element group, the second element group, the third element group, and the unavoidable elements is 100 at %.   
     
     
         3 . An alloy member for semiconductor production apparatuses, the alloy member comprising:
 at least partly an alloy comprising:
 Ta and Mo as a first element group; and 
 at least one of types of elements selected from a group consisting of Nb, Hf, 
   Zr and W as a second element group, wherein   the alloy includes 10 at % or more and 35 at % or less of Ta, 5 at % or more and 25 at % or less of Mo, and 10 at % or more and 35 at % or less each of the elements of the second element group; and   adsorption energy of the alloy with Cl ions and Br radicals is 0.2 eV or less.   
     
     
         4 . The alloy member for semiconductor production apparatuses according to  claim 3 , wherein
 the alloy further comprising:
 at least one of types of elements selected from a group consisting of Au, Pt, and Ag as a third element group, wherein 
   the alloy includes 10 at % or more and 25 at % or less each of the elements of the third element group; and   a total of the first element group, the second element group, the third element group, and the unavoidable elements is 100 at %.   
     
     
         5 . A product comprising:
 at least partly the alloy member for semiconductor production apparatuses according to  claim 3 .   
     
     
         6 . The product according to  claim 5 , wherein the product is a semiconductor production apparatus. 
     
     
         7 . A product comprising:
 at least partly the alloy member for semiconductor production apparatuses according to  claim 4 .   
     
     
         8 . The product according to  claim 7 , wherein the product is a semiconductor production apparatus.