Multilayer electronic component

Abstract

A multilayer electronic component includes a body including a dielectric layer and internal electrodes; and external electrodes disposed on the body, wherein, when an average thickness of the dielectric layer is defined as td μm, the dielectric layer includes secondary phases including Si, the secondary phases include five or more first secondary phases, and each of the five or more first secondary phases includes Si and has a cross-sectional area of 0.01 μm 2 or more within a td μm×td μm region.

What is claimed is: 
     
         1 . A multilayer electronic component, comprising:
 a body including a dielectric layer and internal electrodes; and   external electrodes disposed on the body,   wherein, when an average thickness of the dielectric layer is defined as td μm, the dielectric layer includes secondary phases including Si, the secondary phases include five or more first secondary phases, and each of the five or more first secondary phases includes Si and has a cross-sectional area of 0.01 μm 2  or more within a td μm×td μm region.   
     
     
         2 . The multilayer electronic component of  claim 1 ,
 wherein the secondary phases further include five or less second secondary phases, and each of the second secondary phases includes Si and has a cross-sectional area of less than 0.01 μm 2  within a 1 μm×1 μm region.   
     
     
         3 . The multilayer electronic component of  claim 1 , wherein an average atomic percentage of Si in at least one of the secondary phases is 5 at % or more and 20 at % or lower. 
     
     
         4 . The multilayer electronic component of  claim 1 ,
 wherein the dielectric layer includes a core-shell dielectric grain including a core and a shell structure surrounding at least a portion of the core, and   wherein an average atomic percentage of Si in at least one of the secondary phases is higher than an average atomic percentage of Si in the shell.   
     
     
         5 . The multilayer electronic component of  claim 1 , wherein the dielectric layer includes a plurality of dielectric grains, and an average diameter of the plurality of dielectric grains is 150 nm or more 220 nm or less. 
     
     
         6 . The multilayer electronic component of  claim 1 ,
 wherein the dielectric layer includes a core-shell dielectric grain including a core and a shell structure surrounding at least a portion of the core, and   wherein a diameter of the core is 90 nm or more and 140 nm or less.   
     
     
         7 . The multilayer electronic component of  claim 1 , wherein the dielectric layer includes a main component that includes a barium titanate (BaTiO 3 )-based material. 
     
     
         8 . The multilayer electronic component of  claim 7 ,
 wherein the dielectric layer further includes a first sub-component element,   wherein the first sub-component element is one or more of Mn, V, Cr, Fe, Co, Ni, Cu, Co, and Zn, and   wherein a number of moles of the first sub-component element based on 100 moles of Ti included in the dielectric layer is 0.4 moles or more and 0.8 moles or less.   
     
     
         9 . The multilayer electronic component of  claim 7 ,
 wherein the dielectric layer further includes a second sub-component element,   wherein the second sub-component element is Mg, and   wherein a number of moles of the second sub-component elements based on 100 moles of Ti included in the dielectric layer is more than 0 moles and 1 mole or less.   
     
     
         10 . The multilayer electronic component of  claim 7 ,
 wherein the dielectric layer further includes third sub-component elements,   wherein the third sub-component elements are rare earth elements, and   wherein a number of moles of the third sub-component elements based on 100 moles of Ti included in the dielectric layer is 2.5 moles or more 3.5 moles or less.   
     
     
         11 . The multilayer electronic component of  claim 7 ,
 wherein the dielectric layer further includes a fourth sub-component element,   wherein the fourth sub-component element is Si, and   wherein a number of moles of the fourth sub-component element based on 100 moles of Ti included in the dielectric layer is 0.8 moles or more and 2.0 moles or less.   
     
     
         12 . The multilayer electronic component of  claim 1 , wherein td μm is 10.0 μm or less. 
     
     
         13 . The multilayer electronic component of  claim 1 , wherein the multilayer electronic component satisfies a mean time to failure (MTTF) of more than 100 hours under a temperature of 150° C. and an electric field of 10 V/μm. 
     
     
         14 . The multilayer electronic component of  claim 1 , wherein the multilayer electronic component satisfies at least one of properties: room temperature dielectric constant is 2200 or more, dielectric loss is 10% or lower, insulation resistance at 150° C. is 1.0E+6Ω or more, a capacitance change rate at −55° C. to 125° C. based on capacitance at 25° is 15% or lower, a DC-bias change rate under electric field of 10 V/μm is 70% or lower, and mean time to failure (MTTF) under temperature of 150° C. and electric field of 10 V/μm is 100 hours or more. 
     
     
         15 . The multilayer electronic component of  claim 8 ,
 wherein the first sub-component element includes Mn and V.   
     
     
         16 . The multilayer electronic component of  claim 10 ,
 wherein the rare earth elements include Dy and Tb.   
     
     
         17 . The multilayer electronic component of  claim 16 , wherein the multilayer electronic component satisfies:
 room temperature dielectric constant of 2200 or more, dielectric loss of 10% or lower,   insulation resistance at 150° C. of 1.0E+6Ω or more,   a capacitance change rate at −55° C. to 125° C. based on capacitance at 25° of 15% or lower,   a DC-bias change rate under electric field of 10 V/μm of 70% or lower, and   mean time to failure (MTTF) under temperature of 150° C. and electric field of 10 V/μm of 100 hours or more.