Systems and methods for panel polishing

Abstract

Methods of manufacturing a semiconductor device are disclosed. The method includes providing a polygonal panel with a conductive layer. The method includes polishing an upper surface of the polygonal panel using a chemical polishing process.

What is claimed is: 
     
         1 . A method, comprising:
 providing a polygonal panel with a conductive layer; and   polishing an upper surface of the polygonal panel using a chemical polishing process to form a patterned conductive layer.   
     
     
         2 . The method of  claim 1 , wherein the chemical polishing process uses an etching chemical and a passivating chemical. 
     
     
         3 . The method of  claim 1 , wherein the chemical polishing process does not use an abrasive slurry. 
     
     
         4 . The method of  claim 2 , wherein the conductive layer comprises copper and the etching chemical is selective to copper. 
     
     
         5 . The method of  claim 4 , wherein the etching chemical comprises at least one of a peroxide or hydroxide. 
     
     
         6 . The method of  claim 2 , wherein the passivating chemical comprises Benzotriazole (BTA). 
     
     
         7 . The method of  claim 1 , wherein the panel is a glass panel having a rectangular shape that is greater than 300 millimeters along at least one dimension along an edge of the rectangular shape. 
     
     
         8 . The method of  claim 7 , wherein the chemical polishing process is conducted through a polishing pad, the pad having a surface area that is at least fifty percent smaller than the panel, the polishing pad free of materials that are abrasive to the conductive layer. 
     
     
         9 . The method of  claim 8 , wherein the polishing pad is rotated while the panel is maintained in a fixed position. 
     
     
         10 . The method of  claim 8 , wherein the polishing pad is moved relative to a surface of the polygonal panel. 
     
     
         11 . A method comprising:
 providing a polygonal panel with a layer to be polished; and   polishing the layer on the polygonal panel using a chemical polishing process with a polishing pad providing a pressure between the polishing pad and the polygonal panel of less than one pound per square inch (PSI).   
     
     
         12 . The method of  claim 11 , wherein the chemical polishing process comprises providing a liquid comprising an etching chemical and a passivating chemical. 
     
     
         13 . The method of  claim 12 , wherein the etching chemical corrodes the layer. 
     
     
         14 . The method of  claim 13 , wherein the layer comprises copper. 
     
     
         15 . The method of  claim 14 , wherein the etching chemical comprises at least one of a peroxide or hydroxide. 
     
     
         16 . The method of  claim 12 , wherein the passivating chemical is Benzotriazole (BTA). 
     
     
         17 . The method of  claim 11 , wherein the panel is a glass panel rectangular shape that is greater than 300 millimeters along at least one an edge of the rectangular shape. 
     
     
         18 . The method of  claim 11 , wherein the pressure is less than one half of one PSI. 
     
     
         19 . The method of  claim 11 , wherein the chemical polishing process comprises providing a surfactant including at least one of sodium dodecyl sulphate (SDS) or cetyltrimethyl ammonium bromide (CTAB). 
     
     
         20 . The method of  claim 17 , wherein the glass panel is retained with a rectangular retention assembly during the chemical polishing process.