Manufacturing method of rf components

Abstract

The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

1 . A device, comprising:
 a semiconductor substrate including:
 a first layer; 
 a second layer on the first layer, the second layer includes a plurality of voids; and 
 a third layer on the second layer, the third layer includes a plurality of charge carrier traps. 
   
     
     
         2 . The device of  claim 1 , further comprising an insulating layer on the third layer of the semiconductor substrate. 
     
     
         3 . The device of  claim 2 , further comprising at least one radio frequency component on the insulating layer. 
     
     
         4 . The device of  claim 1 , wherein the first layer is a semiconductor layer. 
     
     
         5 . The device of  claim 1 , wherein the second layer is a crystalline layer. 
     
     
         6 . The device of  claim 1 , wherein the third layer is an amorphous oxidized layer. 
     
     
         7 . The device of  claim 1 , wherein:
 the second layer has a thickness within or equal to an upper end or a lower end of a range from 0.5-μm to 2-μm; and   the third layer has a thickness within or equal to an upper end or a lower end of a range from 0.5-μm to 2-μm.   
     
     
         8 . A device, comprising:
 a substrate including a surface and a first portion;   a first defect layer of the substrate containing first defects of a first type, the first defect layer is spaced apart from the surface of the substrate, and the first defect layer is on the first portion of the substrate;   a second defect layer of the substrate containing second defects of a second type different from the first type, the second defects being of a first complex type between carbon atoms and first atoms and of a second complex type between carbon atoms and oxygen atoms, the second defect layer is at the surface of the substrate, and the second defect layer is spaced apart from the first portion by the first defect layer;   an insulating layer on the surface of the substrate and on the second defect layer of the substrate, the insulating layer being spaced apart from the first defect layer by the second defect layer; and   one or more radio frequency components on the insulating layer.   
     
     
         9 . The device of  claim 8 , wherein the first type is a void type. 
     
     
         10 . The device of  claim 8 , wherein the substrate has a resistance greater than 3-k ( 2  (kilo-Ohms). 
     
     
         11 . The device of  claim 8 , wherein the substrate is made of silicon, and the first atoms are silicon atoms. 
     
     
         12 . The device of  claim 8 , wherein the substrate is made of gallium nitride, and the first atoms are gallium nitride atoms. 
     
     
         13 . The device of  claim 8 , wherein the first layer has a first thickness within or equal to an upper end or a lower end of a range from 0.5-μm to 2-μm. 
     
     
         14 . The device of  claim 13 , wherein the second layer has a second thickness within or equal to an upper end or a lower end of a range from 0.5-μm to 2-μm. 
     
     
         15 . The device of  claim 14 , wherein the insulating layer has a third thickness within or equal to an upper end or a lower end of a range from 0.5-μm to 2-μm. 
     
     
         16 . A device, comprising:
 a substrate including a surface and a first portion that has a first oxygen concentration;   a void defect layer of the substrate containing void defects, the void defect layer is spaced apart from the surface of the substrate, and the void defect layer is on the first portion of the substrate;   a complex defect layer of the substrate containing complex defects, the complex defects being of a first complex type between carbon atoms and first atoms and of a second complex type between carbon atoms and oxygen atoms, the complex defect layer is at the surface of the substrate, and the complex defect layer is spaced apart from the first portion by the void defect layer;   an insulating layer on the surface of the substrate and on the second defect layer of the substrate, the insulating layer being spaced apart from the first defect layer by the second defect layer; and   one or more radio frequency components on the insulating layer.   
     
     
         17 . The device of  claim 16 , wherein:
 the first portion has a first oxygen atom concentration; and   the first defect layer has a second oxygen atom concentration, and the second oxygen concentration is different than the first oxygen concentration.   
     
     
         18 . The device of  claim 17 , wherein the second oxygen concentration is greater than the first oxygen concentration. 
     
     
         19 . The device of  claim 16 , wherein the substrate is made of silicon, and the first atoms are silicon atoms. 
     
     
         20 . The device of  claim 16 , wherein the substrate is made of gallium nitride, and the first atoms are gallium nitride atoms.