Optoelectronic module and method for operating an optoelectronic module

Abstract

The invention relates to an optoelectronic module including a semiconductor component designed to emit electromagnetic radiation; a distribution structure having a plurality of distribution elements, at least one input waveguide and a plurality of output waveguides; and a plurality of conversion structures. The electromagnetic radiation emitted by the semiconductor component enters the distribution structure through the input waveguide. The electromagnetic radiation exits the distribution structure through the output waveguide. One conversion structure is arranged downstream of each output waveguide. The invention also relates to a method for operating an optoelectronic module.

1 . An optoelectronic module comprising:
 a semiconductor component configured to emit electromagnetic radiation,   a distribution structure comprising a plurality of distribution elements, at least one input waveguide and a plurality of output waveguides, and   a plurality of conversion structures, wherein   the distribution elements, the at least one input waveguide and the output waveguides are monolithically integrated on a substrate,   the electromagnetic radiation emitted by the semiconductor component enters the distribution structure through the input waveguide,   the electromagnetic radiation exits the distribution structure through the output waveguides, and   a conversion structure is arranged downstream of each output waveguide and configured to convert electromagnetic radiation of a first wavelength to electromagnetic radiation of a second wavelength different from the first wavelength.   
     
     
         2 . The optoelectronic module according to the  claim 1 , wherein the distribution elements are passive and wavelength-selective filter elements. 
     
     
         3 . The optoelectronic module according to  claim 2 , wherein the distribution elements have a passband with a bandwidth of at most 2 nm, preferably at most 1 nm. 
     
     
         4 . The optoelectronic module according to  claim 2 , wherein the semiconductor component is configured to emit coherent radiation having a modulatable main wavelength. 
     
     
         5 . The optoelectronic module according to  claim 4 , wherein the main wavelength of the electromagnetic radiation emitted by the semiconductor component can be modulated in a spectral range over a bandwidth of at least 25 nm, preferably of at least 50 nm and particularly preferably of at least 100 nm, the spectral range including a wavelength of 447 nm. 
     
     
         6 . The optoelectronic module according to  claim 5 , wherein the main wavelength can be modulated with a frequency of at least 500 Hz, preferably at least 1 kHz and particularly preferably at least 2 kHz. 
     
     
         7 . The optoelectronic module according to  claim 2 , wherein the semiconductor component comprises at least two semiconductor emitters, wherein the first semiconductor emitter is configured to emit an electromagnetic radiation having a variable main wavelength in a first spectral range and a second semiconductor emitter is configured to emit an electromagnetic radiation having a variable main wavelength in a second spectral range. 
     
     
         8 . The optoelectronic module according to  claim 7 , in which an input waveguide is assigned to each semiconductor emitter. 
     
     
         9 . The optoelectronic module according to  claim 2 , wherein exactly one distribution element is assigned to each output waveguide. 
     
     
         10 . The optoelectronic module according to  claim 1 , wherein the distribution elements are active and controllable coupling elements. 
     
     
         11 . The optoelectronic module according to  claim 10 , wherein the distribution elements can be modulated with a frequency of at least 0.5 GHz, preferably 1 GHz, particularly preferably 10 GHz. 
     
     
         12 . The optoelectronic module according to  claim 10 , wherein the semiconductor component is configured to emit coherent radiation having a main wavelength in the blue spectral range. 
     
     
         13 . The optoelectronic module according to  claim 1 , wherein each conversion structure comprises an output coupling element. 
     
     
         14 . The optoelectronic module according to  claim 1 , wherein each conversion structure comprises a diffuser element. 
     
     
         15 . The optoelectronic module according to  claim 1 , wherein an input coupling element is associated with each input waveguide. 
     
     
         16 . The optoelectronic module according to  claim 1 , wherein the semiconductor component is formed with a III/V semiconductor compound material. 
     
     
         17 . The optoelectronic module according to  claim 1 , wherein the distribution structure is formed with one of the following materials: III/V semiconductor compound material (in particular identical to the semiconductor component), silicon-on-insulator (SOI), silicon dioxide, silicon nitride, indium phosphide, gallium arsenide, diamond, diamond-on-insulator (DOI), lithium niobate, aluminum oxide, aluminum nitride, gallium nitride. 
     
     
         18 . The optoelectronic module according to  claim 1 , wherein the optoelectronic module comprises at least 10, preferably at least 30, particularly preferably at least 100 output waveguides. 
     
     
         19 . A method for operating an optoelectronic module according to  claim 1 , wherein
 the distribution elements are provided as passive and wavelength-selective filter elements,   the semiconductor component emits electromagnetic radiation with different discrete main wavelengths, wherein   different main wavelengths are emitted in a display period for a time period dependent on the main wavelength in each case, and   an optical output power of the semiconductor component is constant in the display period, or wherein   different main wavelengths are emitted in a display period for an identical period in each case, and   an optical output power of the semiconductor component is modulated in the display period in synchronization with the modulation of the main wavelengths.   
     
     
         20 . The method for operating an optoelectronic module according to  claim 1 , wherein
 the distribution elements are provided as active and controllable coupling elements,   the semiconductor component emits electromagnetic radiation with a constant main wavelength, wherein   an optical output power of the semiconductor component is constant in a display period, and   the distribution elements act as variably modulatable beam splitters, the distribution of which is constant over the display period, or wherein   the distribution elements act as optical switches and are switched several times in a display period, and   an optical output power of the semiconductor component is modulated in synchronization with the distribution elements in the display period.