US2025188640A1PendingUtilityA1

Flow-through edge shield to lessen current crowding effects during wafer electroplating

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Assignee: APPLIED MATERIALS INCPriority: Dec 6, 2023Filed: Dec 6, 2023Published: Jun 12, 2025
Est. expiryDec 6, 2043(~17.4 yrs left)· nominal 20-yr term from priority
Inventors:Gregory J. WilsonPaul R. Mchugh
C25D 5/08C25D 17/002C25D 7/123C25D 17/001C25D 17/008C25D 7/12
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Claims

Abstract

An edge shield for reducing electrical current crowding of a wafer, having a first side and a second side, during jet array electroplating, including one or more rings disposed below a second side of the wafer and configured to restrict current flow to an edge of the wafer, and at least one opening configured to allow electrolyte flow to pass through. Further, a system for reducing electrical current crowding of a wafer during jet array electroplating, including a chamber where, when the wafer is placed inside the chamber, there is a first gap between a wall of the chamber and an edge of the wafer and a second gap between a jet array and the second side of the wafer, and an edge shield disposed in the second gap, wherein the edge shield includes at least one opening configured to allow electrolyte flow to escape the chamber.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . An edge shield for reducing electrical current crowding of a wafer, having a first side and a second side, during jet array electroplating, comprising:
 one or more rings disposed below the second side of the wafer and configured to restrict current flow to an edge of the wafer; and   at least one opening configured to allow electrolyte flow to pass through.   
     
     
         2 . The edge shield of  claim 1 , wherein the at least one opening is configured between an edge of the wafer and the one or more rings. 
     
     
         3 . The edge shield of  claim 1 , wherein the one or more rings are disposed vertically away from one another. 
     
     
         4 . The edge shield of  claim 1 , wherein the one or more rings have a radial thickness ranging from about 20 mm to about 50 mm. 
     
     
         5 . The edge shield of  claim 1 , wherein the edge shield has a height of less than about 15 mm. 
     
     
         6 . The edge shield of  claim 1 , wherein the at least one opening is a plurality of openings. 
     
     
         7 . The edge shield of  claim 1 , wherein the edge shield further comprises an edge block, wherein the second side of the wafer contacts the edge block. 
     
     
         8 . A system for reducing electrical current crowding of a wafer during jet array electroplating, comprising:
 a chamber configured to hold the wafer, wherein, when the wafer is placed inside the chamber, there is a first gap between a wall of the chamber and an edge of the wafer and a second gap between a jet array and a second side of the wafer; and   an edge shield disposed in the second gap, wherein the edge shield includes at least one opening configured to allow electrolyte flow to escape the chamber,   wherein, during operation, the edge shield directs current flow away from an edge of the wafer.   
     
     
         9 . The system of  claim 8 , wherein the edge shield comprises a ring. 
     
     
         10 . The system of  claim 9 , wherein the at least one opening is a radial pass-through in the ring. 
     
     
         11 . The system of  claim 9 , wherein the ring has a radial thickness between about 5 mm and about 50 mm. 
     
     
         12 . The system of  claim 9 , wherein the ring is configured for filling the second gap. 
     
     
         13 . The system of  claim 9 , wherein the ring is a first ring, and wherein the edge shield comprises a plurality of rings. 
     
     
         14 . The system of  claim 13 , wherein each ring of the plurality of rings has a radial thickness of less than about 40.5 mm. 
     
     
         15 . The system of  claim 13 , wherein the plurality of rings is disposed below the wafer. 
     
     
         16 . The system of  claim 13 , wherein each ring of the plurality of rings has a radial thickness of about 21 mm. 
     
     
         17 . The system of  claim 13 , wherein each ring of the plurality of rings has a height of about 1 mm to 3 mm. 
     
     
         18 . The system of  claim 13 , wherein the at least one opening is a first opening, and the edge shield comprises a plurality of openings. 
     
     
         19 . The system of  claim 8 , wherein the edge shield further comprises an edge block, wherein the wafer has a first side and a second side, and wherein the second side of the wafer contacts the edge block. 
     
     
         20 . The system of  claim 8 , wherein the wafer overlaps with the edge block by about 1 to 3 mm.

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