Plasma processing apparatus

Abstract

In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

What is claimed is: 
     
         1 . A plasma processing apparatus comprising:
 a plasma processing chamber;   a substrate support disposed in the plasma processing chamber, the substrate support having a substrate supporting region and a ring supporting region surrounding the substrate supporting region;   an edge ring disposed on the ring supporting region;   a ring bias electrode disposed in the ring supporting region, the ring bias electrode having a plurality of electrical contacts arranged in a circumferential direction;   a voltage pulse generator configured to generate a voltage pulse signal; and   a feed line connecting the voltage pulse generator and the ring bias electrode, the feed line including;
 an annular conductive member; 
 a common line connecting the annular conductive member and the voltage pulse generator; and 
 a plurality of branch lines extending in a radial direction from the annular conductive member, the plurality of branch lines being connected to the plurality of electrical contacts of the ring bias electrode, respectively. 
   
     
     
         2 . The plasma processing apparatus according to  claim 1 , wherein the substrate support includes a base and an electrostatic chuck, the ring bias electrode is disposed in the electrostatic chuck. 
     
     
         3 . The plasma processing apparatus according to  claim 1 , further comprising a substrate bias electrode disposed in the substrate supporting region. 
     
     
         4 . The plasma processing apparatus according to  claim 3 , further comprising an additional voltage pulse generator connected to the substrate bias electrode and configured to generate an additional voltage pulse signal. 
     
     
         5 . The plasma processing apparatus according to  claim 4 , wherein the substrate support includes a base and an electrostatic chuck, the substrate bias electrode and the ring bias electrode are disposed in the electrostatic chuck. 
     
     
         6 . The plasma processing apparatus according to  claim 5 , further comprising a radio-frequency power source connected to the base and configured to generate a radio-frequency power. 
     
     
         7 . The plasma processing apparatus according to  claim 1 , wherein each of the plurality of branch lines include a socket and a feed pin, the feed pin is fitted into the socket. 
     
     
         8 . The plasma processing apparatus according to  claim 7 , wherein the feed pin has flexibility in a radial direction thereof. 
     
     
         9 . The plasma processing apparatus according to  claim 1 , wherein the plurality of branch lines have substantially a same length. 
     
     
         10 . A substrate support comprising:
 a substrate supporting region;   
       a ring supporting region surrounding the substrate supporting region;
 an edge ring disposed on the ring supporting region; 
 a ring bias electrode disposed in the ring supporting region, the ring bias electrode having a plurality of electrical contacts arranged in a circumferential direction; and 
 a feed line connecting a power source and the ring bias electrode, the feed line including;
 an annular conductive member; 
 a common line connecting the annular conductive member and the power source; and 
 a plurality of branch lines extending in a radial direction from the annular conductive member, the plurality of branch lines being connected to the plurality of electrical contacts of the ring bias electrode, respectively. 
 
 
     
     
         11 . The plasma processing apparatus according to  claim 10 , wherein the substrate support includes a base and an electrostatic chuck, the ring bias electrode is disposed in the electrostatic chuck. 
     
     
         12 . The plasma processing apparatus according to  claim 10 , further comprising a substrate bias electrode disposed in the substrate supporting region. 
     
     
         13 . The plasma processing apparatus according to  claim 12 , wherein the substrate support includes a base and an electrostatic chuck, the substrate bias electrode and the ring bias electrode are disposed in the electrostatic chuck. 
     
     
         14 . The plasma processing apparatus according to  claim 10 , wherein each of the plurality of branch lines include a socket and a feed pin, the feed pin is fitted into the socket. 
     
     
         15 . The plasma processing apparatus according to  claim 14 , wherein the feed pin has flexibility in a radial direction thereof. 
     
     
         16 . The plasma processing apparatus according to  claim 10 , wherein the plurality of branch lines have substantially a same length. 
     
     
         17 . A power feed structure comprising:
 an annular conductive member;   a common line connecting the annular conductive member and a power source; and   a plurality of branch lines extending in a radial direction from the annular conductive member, the plurality of branch lines being connected to an annular electrode.   
     
     
         18 . The plasma processing apparatus according to  claim 17 , wherein each of the plurality of branch lines include a socket and a feed pin, the feed pin is fitted into the socket. 
     
     
         19 . The plasma processing apparatus according to  claim 18 , wherein the feed pin has flexibility in a radial direction thereof. 
     
     
         20 . The plasma processing apparatus according to  claim 17 , wherein the plurality of branch lines have substantially a same length.