Apparatus for polishing a wafer

Abstract

An apparatus for polishing a wafer is provided. The apparatus for polishing the wafer includes a polishing pad for polishing a wafer, a slurry solution provided on an upper surface of the polishing pad, a polishing head disposed on the upper surface of the polishing pad, the wafer positioned on a lower surface of the polishing head facing the upper surface of the polishing pad, a disk container storing a first conditioning disk having a first temperature and a second conditioning disk having a second temperature higher than the first temperature, a disk holder spaced apart from the polishing head in a horizontal direction on the upper surface of the polishing pad, wherein one of the first conditioning disk and the second conditioning disk is attached on a lower surface of the disk holder facing the upper surface of the polishing pad, and a disk transfer manipulator providing one of the first and second conditioning disks stored in the disk container to the disk holder, wherein each of a temperature of the slurry solution and a temperature of the polishing pad is controlled using one of the first and second conditioning disks attached to the lower surface of the disk holder.

What is claimed is: 
     
         1 . An apparatus for polishing a wafer comprising:
 a polishing pad for polishing a wafer;   a slurry solution provided on an upper surface of the polishing pad;   a polishing head disposed on the upper surface of the polishing pad, the wafer positioned on a lower surface of the polishing head facing the upper surface of the polishing pad;   a disk container storing a first conditioning disk having a first temperature and a second conditioning disk having a second temperature higher than the first temperature;   a disk holder spaced apart from the polishing head in a horizontal direction on the upper surface of the polishing pad, wherein one of the first conditioning disk and the second conditioning disk is attached on a lower surface of the disk holder facing the upper surface of the polishing pad; and   a disk transfer manipulator configured to provide one of the first and second conditioning disks stored in the disk container to the disk holder,   wherein each of a temperature of the slurry solution and a temperature of the polishing pad is controlled using one of the first and second conditioning disks when provided to the disk holder.   
     
     
         2 . The apparatus for polishing a wafer of  claim 1 , wherein the disk container includes:
 a first temperature controller configured to maintain the first conditioning disk to be at the first temperature; and   a second temperature controller configured to maintain the second conditioning disk to be at the second temperature.   
     
     
         3 . The apparatus for polishing a wafer of  claim 2 , wherein the disk container includes:
 a first cantilever member attached to the first conditioning disk, the first cantilever member connected to the first temperature controller, and   a second cantilever member attached to the second conditioning disk, the second cantilever member connected to the second temperature controller.   
     
     
         4 . The apparatus for polishing a wafer of  claim 3 , wherein the disk container includes a first magnet disposed inside of the first cantilever member and a second magnet inside the second cantilever member, the first magnet attaches the first conditioning disk to the first cantilever member, and the second magnet attaches the second conditioning disk to the second cantilever member. 
     
     
         5 . The apparatus for polishing a wafer of  claim 1 , wherein
 the first conditioning disk includes first protrusions projecting from a lower surface of the first conditioning disk and configured to form a groove on the upper surface of the polishing pad, and   wherein the second conditioning disk includes second protrusions projecting from a lower surface of the second conditioning disk and configured to form a groove on the upper surface of the polishing pad.   
     
     
         6 . The apparatus for polishing a wafer of  claim 5 , further comprising:
 a third conditioning disk stored in the disk container, the third conditioning disk having the first temperature, wherein the third conditioning disk does not include the first protrusions; and   a fourth conditioning disk stored in the disk container, the fourth conditioning disk having the second temperature, wherein the fourth conditioning disk does not include the second protrusions,   wherein the disk transfer manipulator is further configured to provide one of the first to fourth conditioning disks to the disk holder, and   wherein each of the temperature of the slurry solution and the temperature of the polishing pad is controlled using one of the first to fourth conditioning disks when provided to the disk holder.   
     
     
         7 . The apparatus for polishing a wafer of  claim 1 , wherein each of the first conditioning disk and the second conditioning disk includes metal. 
     
     
         8 . The apparatus for polishing a wafer of  claim 1 , further comprising a third temperature controller connected to the disk holder, the third temperature controller controlling at least one of the temperature of the first conditioning disk attached to the disk holder and the temperature of the second conditioning disk attached to the disk holder. 
     
     
         9 . The apparatus for polishing a wafer of  claim 1 , further comprising a fifth conditioning disk stored in the disk container, the fifth conditioning disk having a third temperature between the first temperature and the second temperature,
 wherein the disk transfer manipulator is further configured to provide one of the first, second, and fifth conditioning disks to the disk holder, and   wherein the fifth conditioning disk when provided to the disk holder does not control the temperature of the slurry solution and the temperature of the polishing pad.   
     
     
         10 . The apparatus for polishing a wafer of  claim 1 , wherein the polishing pad includes a first region, a second region surrounding the first region, and a third region surrounding the second region, and
 wherein the disk holder is configured to selectively move to the second region of the polishing pad to control each of the temperature of the slurry solution and a temperature of the second region of the polishing pad and to the third region of the polishing pad to control each of the temperature of the slurry solution and a temperature of the third region of the polishing pad.   
     
     
         11 . The apparatus for polishing a wafer of  claim 10 , wherein the wafer includes a center region and an edge region surrounding the center region, and
 wherein the center region of the wafer overlaps with the second region of the polishing pad in a vertical direction, at least a part of the edge region of the wafer overlaps with the third region of the polishing pad in the vertical direction.   
     
     
         12 . An apparatus for polishing a wafer comprising:
 a polishing pad for polishing a wafer;   a disk container storing a first conditioning disk having a first temperature and a second conditioning disk having a second temperature higher than the first temperature, the disk container including a first temperature controller controlling the first conditioning disk to the first temperature and a second temperature controller controlling the second conditioning disk to the second temperature,   a disk holder disposed on an upper surface of the polishing pad, wherein the disk holder is configured to attach the first conditioning disk and the second conditioning disk on a lower surface of the disk holder facing the upper surface of the polishing pad; and   a disk transfer manipulator configured to provide one of the first conditioning disk and the second conditioning disk stored in the disk container to the disk holder,   wherein each of the first and second conditioning disks includes metal, and   wherein a temperature of the polishing pad is controlled using one of the first conditioning disk and the second conditioning disk when provided to the disk holder.   
     
     
         13 . The apparatus for polishing a wafer of  claim 12 , further comprising a slurry solution provided on the upper surface of the polishing pad,
 wherein a temperature of the slurry solution is controlled using one of the first conditioning disk and the second conditioning disk when provided to the lower surface of the disk holder.   
     
     
         14 . The apparatus for polishing a wafer of  claim 12 , wherein the first conditioning disk includes first protrusions projecting from a lower surface of the first conditioning disk and configured to form a groove on the upper surface of the polishing pad, and
 wherein the second conditioning disk includes second protrusions projecting from a lower surface of the second conditioning disk and configured to form a groove on the upper surface of the polishing pad.   
     
     
         15 . The apparatus for polishing a wafer of  claim 14 , further comprising:
 a third conditioning disk stored in the disk container, the third conditioning disk having the first temperature, wherein the third conditioning disk does not include the first protrusions; and   a fourth conditioning disk stored in the disk container, the fourth conditioning disk having the second temperature, wherein the fourth conditioning disk does not include the second protrusions,   wherein the disk transfer manipulator is further configured to provide one of the first to fourth conditioning disks to the disk holder, and   wherein the temperature of the polishing pad is controlled using one of the first to fourth conditioning disks when provided to the lower surface of the disk holder.   
     
     
         16 . The apparatus for polishing a wafer of  claim 15 , wherein the first temperature controller controls the third conditioning disk to be at the first temperature, and the second temperature controller controls the fourth conditioning disk to be at the second temperature. 
     
     
         17 . The apparatus for polishing a wafer of  claim 12 , further comprising a third temperature controller connected to the disk holder, the third temperature controller controlling at least one of the temperature of the first conditioning disk to be provided to the disk holder to be at the first temperature and the temperature of the second conditioning disk to be provided to the disk holder to be at the second temperature. 
     
     
         18 . The apparatus for polishing a wafer of  claim 12 , further comprising a fifth conditioning disk stored in the disk container, the fifth conditioning disk having a third temperature between the first and second temperatures, wherein a temperature of the fifth conditioning disk is not controlled by the first temperature controller or the second temperature controller,
 wherein the disk transfer manipulator is configured to provide one of the first, second and fifth conditioning disks to the disk holder, and   wherein the fifth conditioning disk when provided to the lower surface of the disk holder does not control the temperature of the polishing pad.   
     
     
         19 . The apparatus for polishing a wafer of  claim 12 , wherein the polishing pad includes a first region, a second region surrounding the first region, and a third region surrounding the second region, and
 wherein the disk holder is configured to move to the second region of the polishing pad to control a temperature of the second region of the polishing pad and to the third region of the polishing pad to control a temperature of the third region of the polishing pad.   
     
     
         20 . An apparatus for polishing a wafer comprising:
 a polishing pad for polishing a wafer;   a slurry solution provided on an upper surface of the polishing pad;   a polishing head disposed on the upper surface of the polishing pad, the wafer positioned on a lower surface of the polishing head facing the upper surface of the polishing pad;   a disk container storing a first conditioning disk having a first temperature and a second conditioning disk having a second temperature higher than the first temperature, the disk container including a first temperature controller to control the first conditioning disk to be at the first temperature and a second temperature controller to control the second conditioning disk to be at the second temperature;   a disk holder spaced apart from the polishing head in a horizontal direction on the upper surface of the polishing pad and configured to attach one of the first conditioning disk and the second conditioning disk on a lower surface of the disk holder facing the upper surface of the polishing pad; and   a disk transfer manipulator configured to provide one of the first and second conditioning disks stored in the disk container to the disk holder,   wherein each of the first conditioning disk and the second conditioning disk includes metal,   wherein the first conditioning disk includes first protrusions projecting from a lower surface of the first conditioning disk and configured to form a groove on the upper surface of the polishing pad, and the second conditioning disk includes second protrusions projecting from a lower surface of the second conditioning disk and configured to form a groove on the upper surface of the polishing pad, and   wherein each of a temperature of the slurry solution and a temperature of the polishing pad is controlled when one of the first and second conditioning disk is attached to the lower surface of the disk holder.