Optoelectronic lighting device and method

Abstract

An optoelectronic lighting device includes a first at least partially transparent embedding layer and at least one at least partially transparent carrier substrate arranged on the first embedding layer, on whose side facing the first embedding layer a structured electrically conductive layer and at least one optoelectronic semiconductor component are arranged. The first embedding layer embeds the structured electrically conductive layer and the optoelectronic semiconductor component. The optoelectronic semiconductor component is configured to emit light at least along a main emission direction through a top surface of the optoelectronic semiconductor component and in a direction opposite to the main emission direction through a bottom surface of the optoelectronic semiconductor component. A substantially opaque region is provided below the optoelectronic semiconductor component, as viewed in the direction opposite to the main emission direction.

1 . An optoelectronic lighting device comprising:
 a first at least partially transparent embedding layer; and   at least one at least partially transparent carrier substrate arranged on the first embedding layer, on whose side facing the first embedding layer a structured electrically conductive layer and at least one optoelectronic semiconductor component are arranged;   wherein the first embedding layer embeds the structured electrically conductive layer and the at least one optoelectronic semiconductor component;   wherein the at least one optoelectronic semiconductor component during an intended use is configured to emit light at least along a main emission direction through a top surface of the optoelectronic semiconductor component and in a direction opposite to the main emission direction through a bottom surface of the optoelectronic semiconductor component;   wherein a substantially opaque, in particular reflective, region is provided below the at least one optoelectronic semiconductor component as viewed in the direction opposite to the main emission direction, which region comprises a size dependent on at least two values of
 a vertical distance between the bottom surface of the optoelectronic semiconductor component and the opaque region; 
 a surface area of the bottom surface of the optoelectronic semiconductor component; and 
 a maximum emission angle of the light emitted by the bottom surface of the optoelectronic semiconductor component; and 
   wherein the opaque region is larger than a light cone incident on the opaque region of a light emitted by the bottom surface of the optoelectronic semiconductor component and smaller than 2 times the incident light cone.   
     
     
         2 . (canceled) 
     
     
         3 . The optoelectronic lighting device according to  claim 1 , wherein the structured electrically conductive layer comprises at least a first and a second region electrically insulated from the first region, wherein the first region is coupled to a first electrical connection surface of the optoelectronic semiconductor component and the second region is coupled to a second electrical connection surface of the optoelectronic semiconductor component. 
     
     
         4 . The optoelectronic lighting device according to  claim 3 , wherein the opaque region is formed by a third region of the structured electrically conductive layer which is electrically insulated from the first and second regions. 
     
     
         5 . The optoelectronic lighting device according to  claim 3 , wherein the opaque region is formed by a partial region of the second region of the structured electrically conductive layer layer. 
     
     
         6 . The optoelectronic lighting device according to  claim 3 , wherein the first and the second region of the structured electrically conductive layer, as well as the optional third region of the structured electrically conductive layer are separated from each other by an insulating layer. 
     
     
         7 . The optoelectronic lighting device according to  claim 6 , further comprising a first conductive path portion which connects the first region of the structured electrically conductive layer to the first electrical connection surface of the optoelectronic semiconductor component, and which is arranged on the insulating layer. 
     
     
         8 . The optoelectronic lighting device according to  claim 6 , further comprising a second conductive path portion which connects the second region of the structured electrically conductive layer to the second electrical connection surface of the optoelectronic semiconductor component, and which is arranged on the insulating layer. 
     
     
         9 . The optoelectronic lighting device according to  claim 1 , further comprising a second at least partially transparent embedding layer arranged on a side of the carrier substrate opposite to the optoelectronic semiconductor component. 
     
     
         10 . The optoelectronic lighting device according to  claim 9 , wherein the opaque region is embedded in the second at least partially transparent embedding layer. 
     
     
         11 . The optoelectronic lighting device according to  claim 1 , wherein the opaque region is formed by a material accumulation of an opaque material which is arranged on a side of the carrier substrate opposite the optoelectronic semiconductor component. 
     
     
         12 . The optoelectronic lighting device according to  claim 11 , wherein the opaque region is formed by a material accumulation of a reflective material and a light-absorbing material encasing the reflective material. 
     
     
         13 . The optoelectronic lighting device according to  claim 1 ,
 wherein the carrier substrate comprises at least one of PET, PC, and PEN.   
     
     
         14 . The optoelectronic lighting device according to  claim 1 , further comprising a transparent pane, in particular glass pane, which is arranged on the first embedding layer. 
     
     
         15 . The optoelectronic lighting device according to  claim 14 , further comprising a further transparent pane, in particular glass pane, wherein the first and the optional second embedding layer as well as the carrier substrate are arranged between the two transparent panes, in particular glass panes. 
     
     
         16 . The optoelectronic lighting device according to  claim 1 , further comprising an anti-reflective layer arranged on the first embedding layer or the transparent pane. 
     
     
         17 . A method for manufacturing an optoelectronic lighting device comprising the steps of:
 Providing a first at least partially transparent embedding layer;   Providing an at least partially transparent carrier substrate with
 a structured electrically conductive layer and at least one optoelectronic semiconductor component, the at least one optoelectronic semiconductor component being configured to emit light during intended use at least along a main emission direction through a top surface of the optoelectronic semiconductor component and in a direction opposite to the main emission direction through a bottom surface of the optoelectronic semiconductor component, and 
 a substantially opaque, in particular reflective, region which is provided below the at least one optoelectronic semiconductor component as viewed in the direction opposite to the main emission direction, the opaque region having a size as a function of a vertical distance between the bottom surface of the optoelectronic semiconductor component and the opaque region and/or as a function of the size of the bottom surface of the optoelectronic semiconductor component and/or as a function of a maximum emission angle of the light emitted by the bottom surface of the optoelectronic semiconductor component, and wherein the opaque region is larger than a light cone incident on the opaque region of a light emitted by the bottom surface of the optoelectronic semiconductor component and smaller than 2 times the incident light cone; and 
   arranging the carrier substrate on the first embedding layer in such a way that the structured electrically conductive layer and the at least one optoelectronic semiconductor component are embedded in the first embedding layer.   
     
     
         18 . The method according to  claim 17 , wherein the step of providing the carrier substrate comprises applying the structured electrically conductive layer to the carrier substrate such that the structured electrically conductive layer comprises at least a first and a second region electrically insulated from the first region. 
     
     
         19 . The method according to  claim 18 , wherein the step of applying the structured electrically conductive layer comprises creating a third region of the structured electrically conductive layer electrically insulated from the first and second region, wherein the third region forms the opaque region. 
     
     
         20 . The method according to  claim 18 , wherein a partial region of the second region of the structured electrically conductive layer forms the opaque region. 
     
     
         21 . The method according to  claim 19 , wherein the step of providing the carrier substrate comprises applying an insulating layer to the third region or to the partial region of the second region of the structured electrically conductive layer. 
     
     
         22 . The method according to  claim 21 , wherein the step of providing the carrier substrate comprises forming a first conductive path portion on the insulating layer, which is electrically connected to the first region of the structured electrically conductive layer. 
     
     
         23 . The method according to  claim 22 , wherein the step of providing the carrier substrate comprises forming a second conductive path portion on the insulating layer, which is electrically connected to the second region of the structured electrically conductive layer. 
     
     
         24 . The method according to  claim 17 , wherein the step of providing the carrier substrate comprises arranging the at least one optoelectronic semiconductor component on the carrier substrate such that, that the first region of the structured electrically conductive layer is coupled to a first electrical connection surface of the optoelectronic semiconductor component and the second region of the structured electrically conductive layer is coupled to a second electrical connection surface of the optoelectronic semiconductor component. 
     
     
         25 . The method according to  claim 17 , wherein the step of providing the carrier substrate comprises forming the opaque region on a top surface of the carrier substrate opposite to the optoelectronic semiconductor component. 
     
     
         26 . The method according to  claim 17 , further comprising applying a second at least partially transparent embedding layer to a side of the carrier substrate opposite to the first embedding layer. 
     
     
         27 . The method according to  claim 17 , further comprising arranging a transparent pane, in particular a glass pane, on the first embedding layer. 
     
     
         28 . The method according to  claim 27 ,
 further comprising arranging a further transparent pane, in particular glass pane, on the second embedding layer in such a way that the first and the second embedding layer are arranged between the two transparent panes, in particular glass panes.   
     
     
         29 . The method according to  claim 27 , further comprising a lamination step in which the transparent pane, the first embedding layer, the optional second embedding layer and the optional further transparent pane are bonded together.