Soi substrate and related methods

Abstract

Implementations of a method of making a silicon-on-insulator (SOI) die may include forming a plurality of grooves in a second side of a silicon substrate, depositing an insulative layer directly to the second side of the silicon substrate, the insulative layer filling the plurality of grooves, the silicon substrate comprising a first side opposite the second side, and singulating the silicon substrate through the plurality of grooves into a plurality of SOI die. The insulative layer may be coupled to silicon only through the second side of the silicon substrate.

What is claimed is: 
     
         1 . A silicon-on-insulator (SOI) die comprising:
 a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;   an insulative layer coupled directly to the second side of the silicon layer and within the step, wherein the insulative layer is coupled to silicon only through the second side and the step of the silicon layer;   wherein the SOI die is singulated; and   wherein the silicon layer is thinned through a backgrinding process.   
     
     
         2 . The die of  claim 1 , wherein the insulative layer comprises an insulative material that fills an entire area within an outer perimeter of the insulative layer. 
     
     
         3 . The die of  claim 1 , further comprising one or more semiconductor devices on the first side of the silicon layer. 
     
     
         4 . The die of  claim 1 , wherein the insulative layer comprises a thermally conductive material. 
     
     
         5 . The die of  claim 1 , wherein the silicon layer comprises no bubbles therein. 
     
     
         6 . The die of  claim 1 , wherein the silicon layer comprises no implanted gas therein. 
     
     
         7 . The die of  claim 1 , wherein the silicon layer is between 20-30 microns thick. 
     
     
         8 . The die of  claim 1 , wherein the insulative layer is between 2,000-5,000 angstroms thick. 
     
     
         9 . A silicon-on-insulator (SOI) die comprising:
 a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;   an insulative layer coupled directly to the second side of the silicon layer, wherein the insulative layer is coupled to silicon only through the second side and the plurality of steps of the silicon layer; and   wherein the silicon layer is thinned through a backgrinding process;   wherein the SOI die is singulated;   wherein the step is formed in an outer perimeter of the silicon layer; and   wherein the silicon layer is less than 35 micrometers thick.   
     
     
         10 . The die of  claim 9 , wherein the insulative layer comprises an insulative material that fills an entire area within an outer perimeter of the insulative layer. 
     
     
         11 . The die of  claim 9 , further comprising one or more semiconductor devices on the first side of the silicon layer. 
     
     
         12 . The die of  claim 9 , wherein the insulative layer comprises a thermally conductive material. 
     
     
         13 . The die of  claim 9 , wherein the silicon layer comprises no bubbles therein. 
     
     
         14 . The die of  claim 9 , wherein the silicon layer comprises no implanted gas therein. 
     
     
         15 . The die of  claim 9 , wherein the insulative layer is between 2,000-5,000 angstroms thick. 
     
     
         16 . A silicon-on-insulator (SOI) die comprising:
 a silicon layer comprising a first side and a second side, the silicon layer comprising a step formed in a plurality of sidewalls of the silicon layer;   a conductive layer directly coupled to the second side of the silicon layer and into the step; and   an insulative layer coupled directly to the conductive layer and into the step;   wherein the silicon layer is thinned through a backgrinding process; and   wherein the SOI die is singulated.   
     
     
         17 . The die of  claim 16 , wherein the silicon layer is less than 35 micrometers thick. 
     
     
         18 . The die of  claim 16 , wherein the insulative layer is coupled to silicon only through the conductive layer. 
     
     
         19 . The die of  claim 16 , wherein the silicon layer comprises no bubbles therein. 
     
     
         20 . The die of  claim 16 , wherein the silicon layer comprises no implanted gas therein.