Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Abstract

According to the present disclosure, it is possible to reduce an amount of impurities contained in a film after the film is etched. There is provided a technique that includes: (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle includes: (a1) supplying a first fluorine-containing gas to the substrate; and (a2) supplying a reactive gas containing a predetermined element to the substrate; and (b) supplying a second fluorine-containing gas to the substrate after (a), wherein a first substance containing the predetermined element is generated in (a), and wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.

1 . A substrate processing method comprising:
 (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle comprises:
 (a1) supplying a first fluorine-containing gas to the substrate; and 
 (a2) supplying a reactive gas containing a predetermined element to the substrate; and 
   (b) supplying a second fluorine-containing gas to the substrate after (a),   wherein a first substance containing the predetermined element is generated in (a), and   wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.   
     
     
         2 . The substrate processing method of  claim 1 , wherein the first fluorine-containing gas is supplied in (a1) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance. 
     
     
         3 . The substrate processing method of  claim 2 , wherein (a1) is performed under conditions in which a part of the first substance is not removed from the substrate. 
     
     
         4 . The substrate processing method of  claim 3 , wherein an exposure amount of the first fluorine-containing gas in (a1) is set to be smaller than an exposure amount of the first fluorine-containing gas in a case where the first substance on the substrate is completely removed. 
     
     
         5 . The substrate processing method of  claim 3 , wherein a supply time of the first fluorine-containing gas in (a1) is set to be shorter than a supply time of the first fluorine-containing gas in a case where the first substance on the substrate is completely removed. 
     
     
         6 . The substrate processing method of  claim 3 , wherein a process partial pressure of the first fluorine-containing gas in (a1) is set to be lower than a process partial pressure of the first fluorine-containing gas in a case where the first substance on the substrate is completely removed. 
     
     
         7 . The substrate processing method of  claim 1 , wherein an exposure amount of the second fluorine-containing gas in (b) is set to be greater than an exposure amount of the first fluorine-containing gas in (a1). 
     
     
         8 . The substrate processing method of  claim 1 , wherein a supply time of the second fluorine-containing gas in (b) is set to be longer than a supply time of the first fluorine-containing gas in (a1). 
     
     
         9 . The substrate processing method of  claim 1 , wherein a process partial pressure of the second fluorine-containing gas in (b) is set to be higher than a process partial pressure of the first fluorine-containing gas in (a1). 
     
     
         10 . The substrate processing method of  claim 1 , wherein the second fluorine-containing gas is same as the first fluorine-containing gas. 
     
     
         11 . The substrate processing method of  claim 1 , wherein the second fluorine-containing gas is free of a metal element. 
     
     
         12 . The substrate processing method of  claim 1 , wherein the predetermined element comprises a metal element or a metalloid element. 
     
     
         13 . The substrate processing method of  claim 1 , further comprising
 (c) supplying a modifying agent to the substrate after (b),   wherein the modifying agent is capable of removing a second substance containing fluorine on the substrate.   
     
     
         14 . The substrate processing method of  claim 13 , wherein (a), (b) and (c) are performed in a single process chamber. 
     
     
         15 . The substrate processing method of  claim 13 , wherein the modifying agent comprises an oxidizing gas. 
     
     
         16 . The substrate processing method of  claim 13 , wherein the modifying agent comprises a reactive species generated by activating a gas containing at least one selected from the group of a rare gas, an oxygen-containing gas and a hydrogen-containing gas by a plasma. 
     
     
         17 . A method of manufacturing a semiconductor device, comprising
 the substrate processing method of  claim 1 .   
     
     
         18 . A substrate processing apparatus comprising:
 a first fluorine-containing gas supplier configured to supply a first fluorine-containing gas;   a reactive gas supplier configured to supply a reactive gas containing a predetermined element;   a second fluorine-containing gas supplier configured to supply a second fluorine-containing gas; and   a controller configured to be capable of controlling the first fluorine-containing gas supplier, the reactive gas supplier and the second fluorine-containing gas supplier to perform:
 (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle comprises:
 (a1) supplying the first fluorine-containing gas to the substrate; and 
 (a2) supplying the reactive gas to the substrate; and 
 
 (b) supplying the second fluorine-containing gas to the substrate after (a), 
 wherein a first substance containing the predetermined element is generated in (a), and 
 wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance. 
   
     
     
         19 . A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
 (a) removing at least a part of a film formed on a substrate by performing a cycle two or more times, wherein the cycle comprises:
 (a1) supplying a first fluorine-containing gas to the substrate; and 
 (a2) supplying a reactive gas containing a predetermined element to the substrate; and 
   (b) supplying a second fluorine-containing gas to the substrate after (a),   wherein a first substance containing the predetermined element is generated in (a), and   wherein the second fluorine-containing gas is supplied in (b) under conditions in which the first substance is converted into a substance whose vapor pressure is lower than that of the first substance.