Direct Bonded Semiconductor Die Package

Abstract

Semiconductor device packages are provided. In one example, the semiconductor device package includes a semiconductor die. The semiconductor die includes a wide bandgap semiconductor material. The semiconductor die includes a metallization layer on a surface of the semiconductor die. The semiconductor device package includes a submount. The metallization of the semiconductor die is directly bonded to the submount.

1 . A semiconductor device package, comprising:
 a semiconductor die, comprising:
 a wide bandgap semiconductor material; and 
 a metallization layer on a surface of the semiconductor die; 
   a submount; and   wherein the metallization layer of the semiconductor die is directly bonded to the submount.   
     
     
         2 . The semiconductor device package of  claim 1 , wherein the metallization layer and the submount each comprise a malleable metal at an interface between the metallization layer and the submount. 
     
     
         3 . The semiconductor device package of  claim 2 , wherein the malleable metal comprises gold, aluminum, or silver. 
     
     
         4 .- 5 . (canceled) 
     
     
         6 . The semiconductor device package of  claim 1 , wherein the metallization layer of the semiconductor die is directly bonded to the submount via an ultrasonic bond. 
     
     
         7 . The semiconductor device package of  claim 6 , wherein the surface of the submount comprises a surface roughness measured as arithmetic average roughness Ra in a range of about 0.1 μm to about 100 μm. 
     
     
         8 . The semiconductor device package of  claim 1 , wherein the semiconductor device package does not include any die-attach material at an interface between the metallization layer and the submount. 
     
     
         9 . The semiconductor device package of  claim 1 , wherein the submount comprises aluminum, and wherein a surface of the submount opposite the semiconductor die is an anodized surface. 
     
     
         10 . The semiconductor device package of  claim 1 , wherein the submount is a lead frame or a clip structure. 
     
     
         11 . The semiconductor device package of  claim 1 , wherein the submount comprises a first metal layer, a second metal layer, and an insulating material between the first metal layer and the second metal layer. 
     
     
         12 . The semiconductor device package of  claim 11 , wherein the submount is mounted to a lead frame. 
     
     
         13 . The semiconductor device package of  claim 12 , wherein the metallization layer is associated with a contact for one or more semiconductor devices on the semiconductor die. 
     
     
         14 . (canceled) 
     
     
         15 . The semiconductor device package of  claim 1 , wherein the metallization layer is on a substrate of the semiconductor die. 
     
     
         16 . The semiconductor device package of  claim 1 , wherein the metallization layer is on an epitaxial layer of the semiconductor die. 
     
     
         17 . The semiconductor device package of  claim 1 , wherein the semiconductor die is mounted in a flip chip configuration with the submount. 
     
     
         18 . The semiconductor device package of  claim 1 , further comprising one or more wire bonds to the semiconductor die. 
     
     
         19 . The semiconductor device package of  claim 1 , further comprising an encapsulating material on the semiconductor die. 
     
     
         20 . (canceled) 
     
     
         21 . The semiconductor device package of  claim 1 , wherein the semiconductor die comprises silicon carbide or a Group III-nitride. 
     
     
         22 . (canceled) 
     
     
         23 . The semiconductor device package of  claim 1 , wherein the semiconductor die comprises a silicon carbide-based MOSFET, a silicon carbide-based Schottky diode, or a Group III nitride-based high electron mobility transistor. 
     
     
         24 . A semiconductor device package, comprising:
 a semiconductor die, comprising:
 a wide bandgap semiconductor material; and 
 a metallization layer on a surface of the semiconductor die; and 
   an aluminum lead frame.   
     
     
         25 .- 39 . (canceled) 
     
     
         40 . A method of providing a semiconductor device package, the method comprising:
 providing a metallization layer on a surface of a semiconductor die, the semiconductor die comprising a wide bandgap semiconductor; and   directly bonding the metallization layer to a submount using a direct bonding process.   
     
     
         41 .- 59 . (canceled)