US2025107343A1PendingUtilityA1

Display device and method of manufacturing display device

Assignee: SAMSUNG DISPLAY CO LTDPriority: Sep 25, 2023Filed: Jun 17, 2024Published: Mar 27, 2025
Est. expirySep 25, 2043(~17.2 yrs left)· nominal 20-yr term from priority
H10K 2102/101H10K 2102/351C23C 16/45525C23C 16/403C23C 16/402H10K 71/60H10K 71/00H10K 59/1201H10K 59/80522H10K 59/122H10K 2102/103
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Claims

Abstract

A display device may include a light emitting portion disposed on a base layer; a partition wall disposed adjacent to the light emitting portion; and a partition wall insulating layer covering at least a portion of the partition wall. The partition wall may include a first partition wall layer; a second partition wall layer disposed on the first partition wall layer; and a third partition wall layer disposed on the second partition wall layer. The third partition wall layer may include a Transparent Conductive Oxide (TCO) material, and the partition wall insulating layer may not cover a top surface of the light emitting portion.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A display device comprising:
 a light emitting portion disposed on a base layer;   a partition wall disposed adjacent to the light emitting portion; and   a partition wall insulating layer covering at least a portion of the partition wall, wherein   the partition wall includes:
 a first partition wall layer; 
 a second partition wall layer disposed on the first partition wall layer; and 
 a third partition wall layer disposed on the second partition wall layer, 
   the third partition wall layer includes a Transparent Conductive Oxide (TCO) material, and   the partition wall insulating layer does not cover a top surface of the light emitting portion.   
     
     
         2 . The display device of  claim 1 , wherein the first partition wall layer and the third partition wall layer protrude outwardly of the second partition wall layer in a direction in which a plane on which the base layer is disposed extends. 
     
     
         3 . The display device of  claim 2 , wherein
 the second partition wall layer includes a reflective metal material, and   the first partition wall layer includes a TCO material.   
     
     
         4 . The display device of  claim 3 , wherein
 the first partition wall layer includes at least one selected from the group consisting of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Indium Gallium Zinc Oxide (IGZO), and Aluminum Zinc Oxide (AZO),   the second partition wall layer includes at least one of silver (Ag) and aluminum (Al), and   the third partition wall layer includes an amorphous TCO material.   
     
     
         5 . The display device of  claim 3 , wherein
 the first partition wall layer has a thickness in a range of about 30 Å to about 100 Å,   the second partition wall layer has a thickness in a range of about 4000 Å to about 10000 Å, and   the third partition wall layer has a thickness in a range of about 500 Å to about 2000 Å.   
     
     
         6 . The display device of  claim 1 , wherein the partition wall insulating layer covers a side surface of each of the first partition wall layer, the second partition wall layer, and the third partition wall layer. 
     
     
         7 . The display device of  claim 1 , wherein
 the partition wall insulating layer is in contact with at least a portion of a side surface of the light emitting portion, and   the first partition wall layer is in contact with the second partition wall layer, and   the third partition wall layer is in contact with the second partition wall layer.   
     
     
         8 . The display device of  claim 6 , wherein the partition wall insulating layer does not cover a top surface of the third partition wall layer. 
     
     
         9 . The display device of  claim 8 , wherein the partition wall insulating layer includes at least one selected from the group consisting of silica (SiO 2 ) and aluminum oxide (A 2 O 3 ). 
     
     
         10 . The display device of  claim 9 , wherein the partition wall insulating layer has a thickness in a range of about 100 Å to about 500 Å. 
     
     
         11 . The display device of  claim 1 , further comprising:
 a second electrode disposed on the light emitting portion; and   an auxiliary electrode disposed on the second electrode, the auxiliary electrode being electrically connected to the second electrode.   
     
     
         12 . The display device of  claim 11 , wherein the auxiliary electrode includes at least one selected from the group consisting of a TCO material and titanium nitride (TiN). 
     
     
         13 . A method of manufacturing a display device, the method comprising:
 forming a first electrode on a base layer;   forming a partition wall on the base layer;   forming a partition wall insulating layer on the partition wall;   forming a light emitting portion adjacent to the partition wall;   forming a second electrode on the light emitting portion; and   forming an auxiliary electrode on the second electrode, wherein   the forming of the partition wall on the base layer includes:
 depositing a first base partition wall layer; 
 depositing a second base partition wall layer on the first base partition wall layer; and 
 depositing a third base partition wall layer on the second base partition wall layer, 
   the third base partition wall layer includes a Transparent Conductive Oxide (TCO) material, and   the forming of the auxiliary electrode on the second electrode includes disposing the auxiliary electrode directly on the second electrode such that the auxiliary electrode and the second electrode are electrically connected to each other.   
     
     
         14 . The method of  claim 13 , further comprising:
 forming a base pixel defining layer to cover the first electrode, wherein   the first base partition wall layer is deposited on the base pixel defining layer, and   the forming of the partition wall on the base layer includes:
 forming a first partition wall layer, a second middle partition wall layer, and a third partition wall layer by collectively performing wet etching on the first base partition wall layer, the second base partition wall layer, and the third base partition wall layer; and 
 forming a second partition wall layer having a structure retracted inwardly of the first partition wall layer and the third partition wall layer by further etching the second middle partition wall layer. 
   
     
     
         15 . The method of  claim 14 , wherein the third partition wall layer includes at least one selected from the group consisting of Indium Zinc Oxide (IZO) and Indium Gallium Zinc Oxide (IGZO). 
     
     
         16 . The method of  claim 14 , wherein the forming of the partition wall insulating layer on the partition wall includes:
 depositing a base partition wall insulating layer to cover a side surface of the partition wall, a top surface of the third partition wall layer, and at least a portion of a top surface of the base pixel defining layer; and   exposing the top surface of the third partition wall layer by performing dry etching on the base partition wall insulating layer.   
     
     
         17 . The method of  claim 16 , further comprising:
 forming a pixel defining layer on the partition wall, wherein   the forming of the pixel defining layer includes:
 removing at least a portion of the base pixel defining layer; and 
 exposing, by the pixel defining layer, at least a portion of the first electrode, and 
   the removing and the forming of the partition wall insulating layer are performed in the same dry etching process.   
     
     
         18 . The method of  claim 16 , wherein
 the base partition wall insulating layer includes silica (SiO 2 ) or aluminum oxide (Al 2 O 3 ),   in case that the base partition wall insulating layer includes silica (SiO 2 ), the base partition wall insulating layer is deposited through a Chemical Vapor Deposition (CVD) process, and   in case that the base partition wall insulating layer includes aluminum oxide (Al 2 O 3 ), the base partition wall insulating layer is deposited through an Atomic Layer Deposition (ALD) process.   
     
     
         19 . The method of  claim 13 , wherein
 the forming of the auxiliary electrode on the second electrode includes depositing the auxiliary electrode through an ALD process, and   the auxiliary electrode includes at least one selected from the group consisting of a TCO material and titanium oxide (TiN).   
     
     
         20 . A display device comprising:
 a first electrode disposed on a base layer;   a light emitting portion disposed on the first electrode;   a second electrode disposed on the light emitting portion;   a partition wall disposed adjacent to the light emitting portion;   a partition wall insulating layer covering at least a portion of the partition wall; and   an auxiliary electrode covering the second electrode and the partition wall, wherein   the partition wall includes:
 a first partition wall layer; 
 a second partition wall layer disposed on the first partition wall layer; and 
 a third partition wall layer disposed on the second partition wall layer, 
   the third partition wall layer includes an amorphous Transparent Conductive Oxide (TCO) material,   the partition wall insulating layer include an inorganic material, and   the second electrode and the auxiliary electrode are electrically connected to each other.

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