US2025101594A1PendingUtilityA1
Conductive substrate and manufacturing method for conductive substrate
Est. expirySep 22, 2043(~17.1 yrs left)· nominal 20-yr term from priority
Inventors:Aya Nakayama
C23C 18/44
57
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Claims
Abstract
A conductive substrate having excellent conductivity and excellent migration suppressing performance, and a manufacturing method for the conductive substrate. The conductive substrate includes a substrate and a conductive thin wire that contains silver and is disposed on the substrate, where a ratio of an amount of iodine atoms to an amount of silver atoms, which is detected in a case where a surface of the conductive thin wire is measured by a fluorescent X-ray analysis method, is 0.035 to 0.100.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A conductive substrate comprising:
a substrate; and a conductive thin wire that contains silver and is disposed on the substrate, wherein a ratio of an amount of iodine atoms to an amount of silver atoms, which is detected in a case where a surface of the conductive thin wire is measured by a fluorescent X-ray analysis method, is 0.035 to 0.100.
2 . The conductive substrate according to claim 1 ,
wherein a line width of the conductive thin wire is 0.1 μm or more and less than 5.0 μm.
3 . The conductive substrate according to claim 1 ,
wherein in a vertical cross section of the conductive thin wire in a direction orthogonal to a direction in which the conductive thin wire extends, a ratio of a height of the conductive thin wire to a line width of the conductive thin wire is 0.6 or more and less than 1.5.
4 . The conductive substrate according to claim 1 ,
wherein a line width of the conductive thin wire is 0.1 μm or more and less than 5.0 μm, and wherein in a vertical cross section of the conductive thin wire in a direction orthogonal to a direction in which the conductive thin wire extends, a ratio of a height of the conductive thin wire to a line width of the conductive thin wire is 0.6 or more and less than 1.5.
5 . The conductive substrate according to claim 1 ,
wherein the silver contained in the conductive thin wire has a particle shape.
6 . The conductive substrate according to claim 1 ,
wherein a line width of the conductive thin wire is 0.1 μm or more and less than 5.0 μm, and wherein the silver contained in the conductive thin wire has a particle shape.
7 . The conductive substrate according to claim 1 ,
wherein in a vertical cross section of the conductive thin wire in a direction orthogonal to a direction in which the conductive thin wire extends, a ratio of a height of the conductive thin wire to a line width of the conductive thin wire is 0.6 or more and less than 1.5, and wherein the silver contained in the conductive thin wire has a particle shape.
8 . The conductive substrate according to claim 1 ,
wherein a line width of the conductive thin wire is 0.1 μm or more and less than 5.0 μm, wherein in a vertical cross section of the conductive thin wire in a direction orthogonal to a direction in which the conductive thin wire extends, a ratio of a height of the conductive thin wire to a line width of the conductive thin wire is 0.6 or more and less than 1.5, and wherein the silver contained in the conductive thin wire has a particle shape.
9 . The conductive substrate according to claim 1 ,
wherein the substrate is a substrate having flexibility.
10 . The conductive substrate according to claim 9 ,
wherein a material constituting the substrate having flexibility is at least one selected from the group consisting of polyethylene terephthalate, a cycloolefin polymer, a cycloolefin copolymer, and polycarbonate.
11 . A manufacturing method for a conductive substrate, in which a conductive substrate including a substrate and a conductive thin wire that contains silver and is disposed on the substrate is manufactured, the manufacturing method for a conductive substrate comprising, in the following order:
a step 1 of forming a thin wire-shaped metal-containing layer on the substrate; and a step 2 of subjecting the metal-containing layer to an electroless plating treatment to form the conductive thin wire, wherein a plating treatment liquid used for the electroless plating treatment contains potassium iodide and a reducing agent, a content of the reducing agent in the plating treatment liquid is 60 mmol/L or less, and C KI /C R ×1,000≤0.7 is satisfied in a case where contents of the potassium iodide and the reducing agent in the plating treatment liquid are denoted as C KI mmol/L and C R mmol/L, respectively.
12 . The manufacturing method for a conductive substrate according to claim 11 ,
wherein the electroless plating treatment is an electroless silver plating treatment.Join the waitlist — get patent alerts
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