Method for producing a structure comprising at least two tiles on a substrate

Abstract

A method of manufacturing a structure comprising at least two tiles on a substrate comprises: —placing, on a support substrate, at least two tiles, the tiles being arranged on the support substrate in an incorrect distribution and/or geometry compared with a target distribution and/or geometry; —forming a mask comprising a protective film partially covering the tiles in a pattern defining the target distribution and/or geometry and at least one opening extending around the protective film; and —etching at least one tile through the opening in the mask so as to correct the arrangement of the tiles according to the target distribution and/or geometry.

1 . A method of manufacturing a structure comprising at least two tiles on a substrate, the method comprising:
 placing, on a support substrate, at least two tiles, the at least two tiles being arranged on the support substrate in an incorrect distribution and/or geometry relative to a target distribution and/or geometry;   forming a mask comprising a protective film partially covering the tiles, in a pattern defining the target distribution and/or geometry and at least one opening extending around the protective film; and   etching at least one tile through the opening in the mask so as to correct the arrangement of the tiles according to the target distribution and/or geometry.   
     
     
         2 . The method of  claim 1 , wherein the pattern is defined in a system of coordinates of the at least two tiles. 
     
     
         3 . The method of  claim 1 , wherein the pattern is defined in a system of coordinates of the support substrate. 
     
     
         4 . The method of  claim 1 , further comprising placing the at least two tiles successively on the support substrate. 
     
     
         5 . The method of  claim 1 , further comprising placing the at least two tiles simultaneously on the support substrate. 
     
     
         6 . The method of  claim 5 , further comprising:
 forming a pseudo-donor substrate by placing each tile of at least one donor substrate on a first support substrate;   bonding the pseudo-donor substrate to a second support substrate via the tiles; and   transferring a portion of the tiles to the second support substrate.   
     
     
         7 . The method of  claim 6 , wherein the first support substrate and the second support substrate have identical diameters, greater than the diameter of the donor substrate. 
     
     
         8 . The method of  claim 6 , further comprising bonding the pseudo-donor substrate to the second support substrate by molecular adhesion. 
     
     
         9 . The method of  claim 6 , wherein transferring the portion of the tiles to the second support substrate comprises forming a weakened zone in each tile by implanting atomic species in each tile placed on the pseudo-donor substrate to define a portion to be transferred, bonding the pseudo-donor substrate to the second support substrate via the tiles, and detaching each tile along the weakened zone. 
     
     
         10 . The method of  claim 9 , wherein each tile of the at least two tiles has a thickness of between 20 μm and 1000 μm, and the transferred portion of each tile has a thickness of between 30 nm and 1.5 μm. 
     
     
         11 . The method of  claim 6 , wherein the forming of the mask and the etching of the at least one tile are carried out after each tile portion has been transferred to the second support substrate. 
     
     
         12 . The method of  claim 6 , wherein the forming of the mask and the etching of the at least one tile are carried out on the tiles of the pseudo-donor substrate prior to bonding to the second support substrate. 
     
     
         13 . The method of  claim 6 , wherein, to form the pseudo-donor substrate, each tile of the at least two tiles is placed in a cavity of the first support substrate. 
     
     
         14 . The method of  claim 1 , wherein each tile of the at least two tiles has a side with a length less than or equal to 10 mm. 
     
     
         15 . The method of  claim 1 , wherein each tile has a side with a length greater than or equal to 3 mm. 
     
     
         16 . The method of  claim 14 , wherein the protective film covers each tile in at least two patterns separated by openings, and the etching of the tile through the openings in the mask forms at least two portions of tiles in the patterns from the tile. 
     
     
         17 . The method of  claim 1 , wherein each tile of the at least two tiles comprises:
 a semiconductor material, such as a III-V material, in particular, indium nitride, gallium nitride, aluminum nitride, indium arsenide, gallium arsenide, aluminum arsenide, indium phosphide, gallium phosphide or aluminum phosphide, or a IV or IV-IV material, in particular, germanium or silicon carbide;   a piezoelectric material, such as lithium tantalate, lithium niobate, potassium-sodium niobate, barium titanate, quartz, lead zirconate titanate, a compound of lead-magnesium niobate and of lead titanate, zinc oxide, aluminum nitride or aluminum-scandium nitride; and/or   an electrically insulating material, such as diamond, strontium titanate, yttria-stabilized zirconia or sapphire.   
     
     
         18 . The method of  claim 1 , further comprising forming at least one epitaxial layer on each tile of the at least two tiles, the forming of the mask and the etching of the at least one tile being carried out after forming the at least one epitaxial layer. 
     
     
         19 . The method of  claim 10 , wherein each tile has a thickness of between 100 μm and 700 μm. 
     
     
         20 . The method of  claim 14 , wherein each tile of the at least two tiles has a side with a length less than or equal to 2 mm.