US2025091113A1PendingUtilityA1

Hot stamping part and manufacturing method therefor

Assignee: HYUNDAI STEEL COPriority: May 31, 2022Filed: Dec 2, 2024Published: Mar 20, 2025
Est. expiryMay 31, 2042(~15.8 yrs left)· nominal 20-yr term from priority
C21D 8/02C22C 38/44C22C 38/32C22C 38/24C22C 38/26C22C 38/28C22C 38/002C22C 38/04C22C 38/02C21D 3/04C21D 8/0257C23C 2/06C23C 2/02C23C 2/29C23C 2/0224C23C 2/28C23C 2/40C21D 1/76C21D 7/13C21D 9/0068C21D 2211/008C21D 1/18C21D 1/673B21D 37/16B21D 53/88B21D 22/208B21D 22/022B21D 37/01C21D 9/46B21D 37/20C22C 38/12C22C 38/14C21D 8/0273C21D 8/0236C21D 8/0226B21D 22/02
62
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Claims

Abstract

A hot stamping part includes: a base material; a decarburization layer located on the base material; and an inner oxide layer located on the decarburization layer, wherein the hot stamping part has a tensile strength (TS) of 1680 MPa to 2000 MPa, and a hardness of the hot stamping part within a depth of 50 μm from a surface of the hot stamping part in a plate thickness direction of the hot stamping part and an average hardness of the hot stamping part satisfy Relational Expression 1. ( A / B ) ≤ 0 . 7 < Relational ⁢ Expression ⁢ 1 > (In Relational Expression 1, A denotes the hardness (Hv(≤50 μm)) within the depth of 50 μm in the plate thickness direction of the hot stamping part, and B denotes the average hardness (Hv(avg.)) of the hot stamping part.)

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A hot stamping part comprising:
 a base material;   a decarburization layer located on the base material; and   an inner oxide layer located on the decarburization layer,   wherein the hot stamping part has a tensile strength (TS) of about 1680 MPa to 2000 MPa, and   a hardness of the hot stamping part within a depth of about 50 μm from a surface of the hot stamping part in a plate thickness direction of the hot stamping part and an average hardness of the hot stamping part satisfy Relational Expression 1.   
       
         
           
             
               
                 
                   
                     
                       ( 
                       
                         A 
                         / 
                         B 
                       
                       ) 
                     
                     ≤ 
                     
                       0 
                       . 
                       7 
                     
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     1 
                     > 
                   
                 
               
             
           
         
         (In Relational Expression 1, A denotes the hardness (Hv(≤50 μm)) within the depth of 50 μm in the plate thickness direction of the hot stamping part, and B denotes the average hardness (Hv(avg.)) of the hot stamping part.) 
       
     
     
         2 . The hot stamping part of  claim 1 , wherein a depth of the inner oxide layer satisfies Relational Expression 2. 
       
         
           
             
               
                 
                   
                     C 
                     ≤ 
                     
                       5 
                       ⁢ 
                          
                       μ 
                       ⁢ 
                       m 
                     
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     2 
                     > 
                   
                 
               
             
           
         
         (In Relational Expression 2, C denotes the depth of the inner oxide layer in the plate thickness direction of the hot stamping part.) 
       
     
     
         3 . The hot stamping part of  claim 1 , wherein the hot stamping part has a VDA bending angle of about 60° or more. 
     
     
         4 . The hot stamping part of  claim 1 , wherein the hot stamping part has a yield strength (YP) of about 1150 MPa to 1500 MPa and an elongation (EL) of about 4% to 10%. 
     
     
         5 . The hot stamping part of  claim 1 , wherein the hot stamping part has a microstructure with a martensite fraction of about 90% or more. 
     
     
         6 . The hot stamping part of  claim 1 , further comprising a plating layer located on the inner oxide layer. 
     
     
         7 . The hot stamping part of  claim 6 , wherein a thickness of the plating layer is about 10 μm to 30 μm. 
     
     
         8 . A method of manufacturing a hot stamping part, comprising:
 forming a blank by cutting a plated steel sheet having a plating layer formed on at least one surface of a base material; and   heating the blank in a heating furnace having a plurality of sections with different temperature ranges,   wherein the heating of the blank comprises:
 a multi-stage heating step of heating the blank stepwise; and 
 a soaking step of heating the stepwise heated blank to a temperature of Ac3 to about 910° C., 
   wherein a hardness of the hot stamping part within a depth of about 50 μm from a surface of the hot stamping part in a plate thickness direction of the hot stamping part and an average hardness of the hot stamping part satisfy Relational Expression 3.   
       
         
           
             
               
                 
                   
                     
                       ( 
                       
                         A 
                         / 
                         B 
                       
                       ) 
                     
                     ≤ 
                     
                       0 
                       . 
                       7 
                     
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     3 
                     > 
                   
                 
               
             
           
         
         (In Relational Expression 3, A denotes the hardness (Hv(≤50 μm)) within the depth of 50 μm in the plate thickness direction of the hot stamping part, and B denotes the average hardness (Hv(avg.)) of the hot stamping part.) 
       
     
     
         9 . The method of manufacturing a hot stamping part of  claim 8 , wherein a dew point of an annealing furnace of the base material is about −15° C. to +15° C. 
     
     
         10 . The method of manufacturing a hot stamping part of  claim 8 , wherein an annealing temperature of the base material is about 750° C. to 900° C. 
     
     
         11 . The method of manufacturing a hot stamping part of  claim 8 , further comprising:
 after the heating of the blank,   transferring the heated blank;   forming a molded body by pressing the transferred blank with a mold; and   cooling the formed molded body.   
     
     
         12 . The method of manufacturing a hot stamping part of  claim 11 , wherein the hot stamping part further comprises:
 a decarburization layer formed on the base material; and   an inner oxide layer formed on the decarburization layer.   
     
     
         13 . The method of manufacturing a hot stamping part of  claim 12 , wherein a depth of the inner oxide layer satisfies Relational Expression 4. 
       
         
           
             
               
                 
                   
                     C 
                     ≤ 
                     
                       5 
                       ⁢ 
                          
                       μ 
                       ⁢ 
                       m 
                     
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     4 
                     > 
                   
                 
               
             
           
         
         (In Relational Expression 4, C denotes the depth of the inner oxide layer in the plate thickness direction of the hot stamping part.) 
       
     
     
         14 . A hot stamping part comprising:
 a base material;   a decarburization layer located on a surface of the base material;   an inner oxide layer located on the decarburization layer; and   a plating layer located on the inner oxide layer,   
       wherein the base material comprises a microstructure with a martensite fraction of 90% or more; 
       wherein the hot stamping part has:
 a tensile strength (TS) of 1680 MPa to 2000 MPa, 
 a yield strength (YP) of 1150 MPa to 1500 MPa, 
 an elongation (EL) of 4% to 10%, and 
 a VDA bending angle of 60° or more; 
 
       wherein a hardness of the hot stamping part within a depth of 50 μm from the surface of the hot stamping part and an average hardness of the hot stamping part satisfy Relational Expression 1: 
       
         
           
             
               
                 
                   
                     
                       
                         ( 
                         
                           A 
                           / 
                           B 
                         
                         ) 
                       
                       ≤ 
                       0.7 
                     
                     , 
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     1 
                     > 
                   
                 
               
             
           
         
         where A denotes the hardness (Hv(≤50 μm)) within the depth of 50 μm in the plate thickness direction, and B denotes the average hardness (Hv(avg.)) of the hot stamping part; and 
       
       wherein a depth of the inner oxide layer satisfies Relational Expression 2: 
       
         
           
             
               
                 
                   
                     
                       C 
                       ≤ 
                       
                         5 
                         ⁢ 
                            
                         μ 
                         ⁢ 
                         m 
                       
                     
                     , 
                   
                 
                 
                   
                     < 
                     Relational 
                     ⁢ 
                         
                     Expression 
                     ⁢ 
                         
                     2 
                     > 
                   
                 
               
             
           
         
         where C denotes the depth of the inner oxide layer in the plate thickness direction. 
       
     
     
         15 . The hot stamping part of  claim 14 , wherein the decarburization layer has a hardness that is 70% or less of the average hardness of the base material measured at ¼ thickness from the surface of the base material. 
     
     
         16 . The hot stamping part of  claim 14 , wherein the plating layer is a zinc (Zn)-based plating layer comprising zinc (Zn), iron (Fe), aluminum (Al), manganese (Mn), silicon (Si), and unavoidable impurities, and has a thickness of 10 μm to 30 μm. 
     
     
         17 . The hot stamping part of  claim 14 , wherein the base material comprises:
 0.25 wt % to 0.5 wt % carbon (C),   0.1 wt % to 0.8 wt % silicon (Si),   0.3 wt % to 3.0 wt % manganese (Mn),   0.01 wt % to 0.1 wt % of at least one of titanium (Ti), niobium (Nb), and vanadium (V),   0.01 wt % to 1.0 wt % chromium (Cr), and   the remainder being iron (Fe) and unavoidable impurities.   
     
     
         18 . The hot stamping part of  claim 14 , wherein the inner oxide layer comprises silicon (Si), manganese (Mn), and chromium (Cr) and has a depth of 5 μm or less. 
     
     
         19 . The hot stamping part of  claim 14 , wherein the hot stamping part exhibits a crack depth of 10 μm or less when subjected to a VDA bending test in accordance with VDA238-100. 
     
     
         20 . The hot stamping part of  claim 14 , wherein the decarburization layer and the inner oxide layer are formed by annealing the base material at a temperature of 750° C. to 900° C. in an annealing furnace with a dew point of −15° C. to +15° C.

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