Semiconductor package and manufacturing method thereof

Abstract

A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.

What is claimed is: 
     
         1 . A manufacturing method, comprising:
 mounting first semiconductor dies and second semiconductor dies on a substrate and connecting the first and second semiconductor dies to the substrate, wherein the first semiconductor dies are arranged side-by-side and spaced apart and with a first gap there-between, and the second semiconductor dies are arranged side-by-side and spaced apart and with a second gap there-between;   attaching a frame structure on the substrate including attaching a ring structure on the substrate surrounding the first and second semiconductor dies and attaching a beam structure onto the substrate beside the first and second semiconductor dies and between the first semiconductor dies and the second semiconductor dies;   applying a first joining material onto the first semiconductor dies without covering the first gap;   applying a second joining material onto the second semiconductor dies without covering the second gap;   providing a heat sink lid; and   mounting and attaching the heat sink lid on the first and second joining materials and over the first and second semiconductor dies and over the beam structure without covering the first gap and the second gap, wherein mounting the heat sink lid includes aligning a through opening of the heat sink lid with the first gap and the second gap so that a portion of the beam structure and the first gap and the second gap are exposed from the through opening of the heat sink lid.   
     
     
         2 . The manufacturing method of  claim 1 , further comprising forming an encapsulant laterally wrapping the first semiconductor dies and filling inside the first gap. 
     
     
         3 . The manufacturing method of  claim 1 , wherein attaching a frame structure on the substrate comprises applying an adhesive between the frame structure and the substrate. 
     
     
         4 . The manufacturing method of  claim 1 , further comprising mounting passive components on the substrate and beside the first and second semiconductor dies and between the ring structure and the first or second semiconductor dies. 
     
     
         5 . The manufacturing method of  claim 1 , wherein the heat sink lid is provided with the through opening extending in a first direction with a first extending length, the first direction is substantially parallel to an extending direction of the first gap, and the first extending length is substantially equivalent to a length of the heat sink lid in the first direction. 
     
     
         6 . The manufacturing method of  claim 5 , wherein the heat sink lid is provided with joining arms respectively connecting to two pieces of the heat sink lid divided by the through opening. 
     
     
         7 . The manufacturing method of  claim 1 , wherein the heat sink lid is provided with a spreading span substantially the same as an area of the substrate. 
     
     
         8 . The manufacturing method of  claim 1 , wherein the heat sink lid is provided with a spreading span smaller than an area of the substrate. 
     
     
         9 . The manufacturing method of  claim 1 , wherein the heat sink lid is provided with the through opening extending in a first direction with a first extending length, the first direction is substantially parallel to an extending direction of the first gap, and the first extending length is smaller than a length of the heat sink lid in the first direction. 
     
     
         10 . A manufacturing method, comprising:
 forming a first semiconductor structure including a first semiconductor die, a second semiconductor die separate from the first semiconductor die with a gap there-between, and an encapsulant laterally wrapping the first and second semiconductor dies and filling up the gap;   providing second dies;   bonding the first die and the second dies on a substrate, wherein the second dies are spaced apart and with a second gap there-between;   attaching a frame structure on the substrate including attaching a ring structure on the substrate surrounding the first and second dies and attaching a beam structure onto the substrate beside the first and second dies and between the first die and the second dies;   applying a first joining material on the first and second semiconductor dies of the first die without covering the first gap;   applying a second joining material onto the second dies;   providing a heat sink lid; and   mounting and attaching the heat sink lid on the first and second joining materials and over the first and second dies without covering the first gap and the second gap, wherein mounting the heat sink lid includes aligning a through opening of the heat sink lid with the first gap and the second gap so that a portion of the encapsulant filled in the first gap and the second gap are exposed from the through opening of the heat sink lid.   
     
     
         11 . The manufacturing method of  claim 10 , further comprising forming conductive balls on the substrate, wherein the conductive balls are electrically connected with the first and second dies through the substrate. 
     
     
         12 . The manufacturing method of  claim 10 , further comprising forming an underfill between the first die and the substrate and between the second dies and the substrate. 
     
     
         13 . The manufacturing method of  claim 12 , further comprising mounting passive components on the substrate and beside the first and second dies and between the ring structure and the first or second dies. 
     
     
         14 . The manufacturing method of  claim 10 , wherein the heat sink lid is provided with the through opening extending through a whole length of the heat sink lid, and after mounting and attaching the heat sink lid, the through opening exposes a portion of the ring structure and a portion of the beam structure. 
     
     
         15 . The manufacturing method of  claim 10 , wherein the heat sink lid is provided with the through opening extending through a whole length of the heat sink lid, and after mounting and attaching the heat sink lid, the through opening exposes a portion of the beam structure. 
     
     
         16 . A package structure, comprising:
 a substrate;   first semiconductor dies, disposed on a substrate and connecting to the substrate;   second semiconductor dies, disposed on the substrate, beside the first semiconductor dies and connecting to the substrate, wherein the first semiconductor dies are arranged side-by-side and spaced apart and with a first gap there-between, and the second semiconductor dies are arranged side-by-side and spaced apart and with a second gap there-between;   a frame structure disposed on the substrate, wherein the frame structure includes a ring structure disposed on the substrate surrounding the first and second semiconductor dies, and a beam structure disposed on the substrate beside the first and second semiconductor dies and between the first semiconductor dies and the second semiconductor dies;   a first joining material on the first semiconductor dies without covering the first gap;   a second joining material on the second semiconductor dies without covering the second gap; and   a heat sink lid, disposed on the first and second joining materials and over the first and second semiconductor dies and over the beam structure without covering the first gap and the second gap, wherein the heat sink lid includes a through opening aligned with the first gap and the second gap so that a portion of the beam structure and the first gap and the second gap are exposed from the through opening of the heat sink lid.   
     
     
         17 . The structure of  claim 16 , further comprising an encapsulant laterally wrapping the first semiconductor dies and filled inside the first gap. 
     
     
         18 . The structure of  claim 16 , further comprising an adhesive disposed between the frame structure and the substrate. 
     
     
         19 . The structure of  claim 16 , further comprising passive components disposed on the substrate and beside the first and second semiconductor dies and between the ring structure and the first or second semiconductor dies. 
     
     
         20 . The structure of  claim 16 , wherein the heat sink lid includes joining arms respectively connected to two pieces of the heat sink lid divided by the through opening.