Electronic device and manufacturing method thereof

Abstract

Disclosed are an electronic device and a manufacturing method thereof. The electronic device includes a circuit structure and at least one contacting part. The at least one contacting part is disposed on the circuit structure, and includes an insulating part and a conductive layer. The conductive layer surrounds the insulating part, and the conductive layer is electrically connected to the circuit structure. The electronic device disclosed herein may have a buffering effect or reduce damage to an object to be detected.

What is claimed is: 
     
         1 . An electronic device, comprising:
 a circuit structure; and   at least one contacting part, disposed on the circuit structure and comprising an insulating part and a conductive layer;   wherein the conductive layer surrounds the insulating part, and the conductive layer is electrically connected to the circuit structure.   
     
     
         2 . The electronic device according to  claim 1 , wherein an elongation of the insulating part is 20% to 900%. 
     
     
         3 . The electronic device according to  claim 1 , wherein the at least one contacting part further comprises:
 a filler, dispersed in the insulating part.   
     
     
         4 . The electronic device according to  claim 3 , wherein a particle size of the filler is 0.1 μm to 50 μm. 
     
     
         5 . The electronic device according to  claim 3 , wherein a filling rate of the filler is 40 wt % to 88 wt %. 
     
     
         6 . The electronic device according to  claim 1 , wherein an elongation of the insulating part is greater than an elongation of an insulating layer of the circuit structure. 
     
     
         7 . The electronic device according to  claim 1 , wherein the at least one contacting part further comprises:
 an anti-oxidation layer, surrounding the conductive layer,   wherein a thickness of the anti-oxidation layer is less than a thickness of the conductive layer.   
     
     
         8 . The electronic device according to  claim 1 , wherein a bottom surface of the at least one contacting part has a length and a width, the length is 5 μm to 200 μm, and the width is 5 μm to 200 μm. 
     
     
         9 . The electronic device according to  claim 8 , wherein the at least one contacting part has a height, and the height is 30 μm to 200 μm. 
     
     
         10 . The electronic device according to  claim 9 , wherein a ratio of the length to the height is greater than or equal to 0.5 and less than or equal to 1.5. 
     
     
         11 . A manufacturing method of an electronic device, comprising:
 providing a circuit structure; and   forming at least one contacting part on the circuit structure, wherein the at least one contacting part comprises an insulating part and a conductive layer, the conductive layer surrounds the insulating part, and the conductive layer is electrically connected to the circuit structure.   
     
     
         12 . The manufacturing method of the electronic device according to  claim 11 , wherein the step of forming the at least one contacting part on the circuit structure comprises:
 forming a first photoresist on the circuit structure, wherein the first photoresist has a first opening;   forming the insulating part in the first opening;   removing the first photoresist and forming a seed layer on the insulating part;   forming a second photoresist on the seed layer, wherein the second photoresist has a second opening;   forming a conductive material layer in the second opening; and   removing the second photoresist and removing the seed layer not covered by the conductive material layer,   wherein a combination of the conductive material layer and the seed layer covered by the conductive material layer is regarded as the conductive layer.   
     
     
         13 . The manufacturing method of the electronic device according to  claim 12 , further comprising:
 forming an anti-oxidation layer on the conductive layer.   
     
     
         14 . The manufacturing method of the electronic device according to  claim 13 , further comprising:
 providing a circuit board, so that the circuit board is electrically connected to the circuit structure and the at least one contacting part.   
     
     
         15 . The manufacturing method of the electronic device according to  claim 14 , further comprising:
 providing a carrier board, so that at least portion of the circuit structure is disposed between the carrier board and the circuit board.   
     
     
         16 . The manufacturing method of the electronic device according to  claim 15 , further comprising:
 providing a through groove, wherein the through groove is disposed between two adjacent circuit boards.   
     
     
         17 . The manufacturing method of the electronic device according to  claim 16 , wherein the carrier board comprises:
 a body, disposed on the circuit board; and   a buffer, disposed in the through groove.   
     
     
         18 . The manufacturing method of the electronic device according to  claim 17 , wherein an elongation of the insulating part is greater than an elongation of an insulating layer of the circuit structure. 
     
     
         19 . The manufacturing method of the electronic device according to  claim 18 , wherein the at least one contacting part further comprises a filler, and the filler is dispersed in the insulating part. 
     
     
         20 . A manufacturing method of an electronic device, wherein the manufacturing method has a first operation mode and comprises:
 providing a carrier board;   coupling a circuit structure to the carrier board;   forming at least one contacting part on the circuit structure; and   providing an object to be detected, so that the at least one contacting part is electrically connected to the object to be detected in the first operation mode,   wherein the at least one contacting part comprises an insulating part and a conductive layer, the conductive layer surrounds the insulating part, and the conductive layer is electrically connected to the circuit structure.