US2025069891A1PendingUtilityA1

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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Assignee: KOKUSAI ELECTRIC CORPPriority: Jul 17, 2018Filed: Nov 12, 2024Published: Feb 27, 2025
Est. expiryJul 17, 2038(~12 yrs left)· nominal 20-yr term from priority
Inventors:Motomu DegaiKimihiko NakataniHiroshi Ashihara
H10P 14/412H10P 95/00H10P 50/00H10P 14/432C23C 16/52C23C 16/46C23C 16/45563C23C 16/34C23C 16/04C23C 16/45544C23C 16/45553C23C 16/45534C23C 16/02C23C 14/04H01L 21/32051H01L 21/3105H10P 72/0432H10P 14/6339H10P 14/6512
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Claims

Abstract

There is provided a technique that includes: organically terminating a first region of a substrate by supplying an adsorption control agent containing an organic ligand to the substrate while regulating a temperature of the substrate including the first region and a second region different from the first region formed on a surface of the substrate depending on a composition of the first region; and selectively growing a film on the second region by supplying a deposition gas to the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device comprising steps described in the specification.

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