US2025048934A1PendingUtilityA1
Piezoelectric thin film, piezoelectric thin film element, and piezoelectric transducer
Est. expiryJul 31, 2043(~17 yrs left)· nominal 20-yr term from priority
H10N 30/8561H10N 30/8542H04R 17/00H10N 30/076H10N 30/708H10N 30/2047H10N 30/871H10N 30/706
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Claims
Abstract
A piezoelectric thin film contains a metal oxide having a perovskite structure. The metal oxide contains bismuth, potassium, titanium, magnesium, iron, and an element M. The element M is at least one element selected from the group consisting of gallium and cobalt. At least a part of the metal oxide is at least one crystal selected from the group consisting of a tetragonal crystal and an orthorhombic crystal. A (001) plane of the crystal is oriented in a normal direction of a surface of the piezoelectric thin film.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A piezoelectric thin film comprising a metal oxide having a perovskite structure, wherein
the metal oxide contains bismuth, potassium, titanium, magnesium, iron, and an element M, the element M is at least one element selected from the group consisting of gallium and cobalt, at least a part of the metal oxide is at least one crystal selected from the group consisting of a tetragonal crystal and an orthorhombic crystal, and a (001) plane of the crystal is oriented in a normal direction of a surface of the piezoelectric thin film.
2 . The piezoelectric thin film according to claim 1 , wherein the metal oxide is represented by Chemical Formula 1 below,
each of x, y, and z in Chemical Formula 1 below is a positive real number, x+y+z is 1, α in Chemical Formula 1 below is more than 0 and less than 1, β in Chemical Formula 1 below is more than 0 and less than 1, γ in Chemical Formula 1 below is from 0.05 to 0.40, M in Chemical Formula 1 below is represented by Ga 1−δ Co δ , and δ is from 0 to 1,
x (B 1−α K α )TiO 3 - y Bi(Ti 1−β Mg β )O 3 - z Bi(Fe 1−γ M γ )O 3 (1)
3 . The piezoelectric thin film according to claim 2 , wherein a three-dimensional coordinate system is composed of an X-axis, a Y-axis, and a Z-axis,
arbitrary coordinates in the coordinate system are represented by (X, Y, Z), coordinates (x, y, z) in the coordinate system correspond to x, y, and z in Chemical Formula 1 above, coordinates A in the coordinate system are (0.250, 0.005, 0.700), coordinates B in the coordinate system are (0.450, 0.250, 0.300), coordinates C in the coordinate system are (0.200, 0.500, 0.300), coordinates D in the coordinate system are (0.005, 0.250, 0.700), and the coordinates (x, y, z) are positioned within a quadrangle with vertexes at the coordinates A, the coordinates B, the coordinates C, and the coordinates D.
4 . The piezoelectric thin film according to claim 1 , wherein the piezoelectric thin film is an epitaxial film.
5 . The piezoelectric thin film according to claim 1 , wherein the piezoelectric thin film is a ferroelectric thin film.
6 . A piezoelectric thin film element comprising the piezoelectric thin film according to claim 1 .
7 . The piezoelectric thin film element according to claim 6 , comprising:
a crystalline substrate; and the piezoelectric thin film directly or indirectly stacked on the crystalline substrate.
8 . The piezoelectric thin film element according to claim 6 , comprising:
a crystalline substrate; an electrode layer directly or indirectly stacked on the crystalline substrate; and the piezoelectric thin film directly or indirectly stacked on the electrode layer.
9 . The piezoelectric thin film element according to claim 6 , comprising:
an electrode layer; and the piezoelectric thin film directly or indirectly stacked on the electrode layer.
10 . The piezoelectric thin film element according to claim 8 , further comprising at least one intermediate layer, wherein
the intermediate layer is disposed between the crystalline substrate and the electrode layer.
11 . The piezoelectric thin film element according to claim 8 , further comprising at least one intermediate layer, wherein
the intermediate layer is disposed between the electrode layer and the piezoelectric thin film.
12 . The piezoelectric thin film element according to claim 9 , further comprising at least one intermediate layer, wherein
the intermediate layer is disposed between the electrode layer and the piezoelectric thin film.
13 . The piezoelectric thin film element according to claim 8 , wherein the electrode layer contains a platinum crystal,
a (002) plane of the platinum crystal is oriented in a normal direction of a surface of the electrode layer, and a (200) plane of the platinum crystal is oriented in an in-plane direction of the surface of the electrode layer.
14 . The piezoelectric thin film element according to claim 9 , wherein the electrode layer contains a platinum crystal,
a (002) plane of the platinum crystal is oriented in a normal direction of a surface of the electrode layer, and a (200) plane of the platinum crystal is oriented in an in-plane direction of the surface of the electrode layer.
15 . A piezoelectric transducer comprising the piezoelectric thin film according to claim 1 .
16 . A piezoelectric transducer comprising the piezoelectric thin film element according to claim 6 .Join the waitlist — get patent alerts
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