Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device, and recording medium

Abstract

There is provided a technique that includes: a processing container including a first region in which a substrate is processed and a second region in which the substrate is not disposed; a first supplier that supplies a processing gas to the first region; a second supplier that supplies an adsorption inhibiting gas to the second region in the processing container, a first supply system capable of supplying the processing gas to the first supplier; a second supply system capable of supplying the adsorption inhibiting gas to the second supplier; and a controller capable of controlling the first supply system and the second supply system to perform: (a) supplying the adsorption inhibiting gas to the second region; and (b) supplying the processing gas to the first region after (a).

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a processing container including a first region in which a substrate is processed and a second region in which the substrate is not disposed;   a first supplier that supplies a processing gas to the first region of the processing container;   a second supplier that supplies an adsorption inhibiting gas to the second region of the processing container;   a first supply system capable of supplying the processing gas to the first supplier;   a second supply system capable of supplying the adsorption inhibiting gas to the second supplier; and   a controller capable of controlling the first supply system and the second supply system to perform:
 (a) supplying the adsorption inhibiting gas to the second region; and 
 (b) supplying the processing gas to the first region after (a). 
   
     
     
         2 . The substrate processing apparatus according to  claim 1 , wherein
 the second region is provided above the first region.   
     
     
         3 . The substrate processing apparatus according to  claim 1 , wherein
 the second region is provided below the first region.   
     
     
         4 . The substrate processing apparatus according to  claim 1 , wherein
 the second region is provided both above and below the first region,   the second supplier includes an upper supplier that supplies the adsorption inhibiting gas to the second region provided above the first region and a lower supplier that supplies the adsorption inhibiting gas to the second region provided below the first region, and   the controller is configured to be capable of controlling the second supply system to supply the adsorption inhibiting gas to the second region above the first region and the second region below the first region in (a).   
     
     
         5 . The substrate processing apparatus according to  claim 4 , wherein
 the second supplier is a nozzle including an opening at a distal end, and   the nozzle is provided such that the opening is located in the upper supplier.   
     
     
         6 . The substrate processing apparatus according to  claim 4 , wherein
 the second supplier is a nozzle including an opening at a distal end, and   the nozzle is provided such that the opening is located in the lower supplier.   
     
     
         7 . The substrate processing apparatus according to  claim 1 , wherein the first supplier includes a plurality of openings located in the first region. 
     
     
         8 . The substrate processing apparatus according to  claim 1 , further comprising:
 a substrate support that is provided in the processing container and supports the substrate; and   a support shaft that supports the substrate support,   wherein   the second supplier includes a support-shaft-side supplier that is disposed closer to the support shaft's side than an outer peripheral side of the second region provided below the first region and supplies the adsorption inhibiting gas to the second region.   
     
     
         9 . The substrate processing apparatus according to  claim 1 , wherein
 the second supply system is configured to be capable of supplying an inert gas to the second supplier, and   the controller is configured to be capable of controlling the second supply system to supply the inert gas to the second supplier in (b).   
     
     
         10 . The substrate processing apparatus according to  claim 1 , wherein
 the first supply system is configured to be capable of supplying an inert gas to the first supplier, and   the controller is configured to be capable of controlling the first supply system to supply the inert gas to the first supplier.   
     
     
         11 . The substrate processing apparatus according to  claim 9 , wherein
 the controller is configured to be capable of controlling the first supply system and the second supply system to supply the inert gas to the first region when the adsorption inhibiting gas is supplied to the second supplier.   
     
     
         12 . The substrate processing apparatus according to  claim 10 , wherein
 the controller is configured to be capable of controlling the first supply system and the second supply system to supply the inert gas to the first region after supplying of the adsorption inhibiting gas to the second supplier is started.   
     
     
         13 . The substrate processing apparatus according to  claim 1 , wherein
 the second supply system is configured to be capable of supplying the adsorption inhibiting gas to the first supplier, and   the controller is configured to be capable of controlling the second supply system to supply the adsorption inhibiting gas to the first supplier.   
     
     
         14 . The substrate processing apparatus according to  claim 1 , wherein
 the first supply system is capable of supplying a reactant gas to the first supplier, and   the controller is configured to be capable of controlling the first supply system and the second supply system to supply the adsorption inhibiting gas to the second region while the processing gas and the reactant gas are sequentially and repeatedly supplied in (b).   
     
     
         15 . The substrate processing apparatus according to  claim 1 , wherein
 the controller is configured to be capable of controlling the second supply system to perform (a) in a state where the substrate is not present in the processing container, and to perform (b) in a state where the substrate is present in the processing container.   
     
     
         16 . The substrate processing apparatus according to  claim 1 , further comprising
 an exhauster that exhausts an atmosphere in the processing container, wherein   the controller is configured to be capable of controlling the exhauster, when the adsorption inhibiting gas is supplied into the processing container, to exhaust the atmosphere in a state where an exhaust amount of the atmosphere is set smaller than an exhaust amount at a time of processing the substrate.   
     
     
         17 . The substrate processing apparatus according to  claim 1 , further comprising
 an exhauster that exhausts an atmosphere in the processing container, wherein   the controller is configured to be capable of controlling the exhauster, when the adsorption inhibiting gas is supplied into the processing container, to exhaust the atmosphere in a state where exhaust of the atmosphere is stopped.   
     
     
         18 . A substrate processing method comprising:
 (a) supplying an adsorption inhibiting gas to a second region of a processing container including a first region in which a substrate is processed and the second region in which the substrate is not disposed; and   (b) supplying a processing gas to the first region after (a).   
     
     
         19 . A method of manufacturing a semiconductor device, comprising the method of  claim 18 . 
     
     
         20 . A non-transitory computer-readable recording medium that causes, by a computer, a substrate processing apparatus to perform:
 (a) supplying an adsorption inhibiting gas to a second region of a processing container including a first region in which a substrate is processed and the second region in which the substrate is not disposed; and   (b) supplying a processing gas to the first region after (a) to process the substrate disposed in the first region.