Substrate processing apparatus, substrate processing method, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Abstract

There is provided a technique capable of suppressing a heat diffusion. There is provided a technique that includes: a process chamber in which a substrate with a first film doped with a dopant and a second film different from the first film formed on the substrate is processed; an electromagnetic wave supplier configured to supply an electromagnetic wave to the substrate; and a controller configured to be capable of controlling the electromagnetic wave supplier to stop supplying the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.

What is claimed is: 
     
         1 . A substrate processing apparatus comprising:
 a process chamber in which a substrate with a first film doped with a dopant and a second film different from the first film formed on the substrate is processed;   an electromagnetic wave supplier configured to supply an electromagnetic wave to the substrate; and   a controller configured to be capable of controlling the electromagnetic wave supplier to stop supplying the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.   
     
     
         2 . The substrate processing apparatus of  claim 1 , wherein the electromagnetic wave is supplied in a pulsed manner in which the electromagnetic wave is turned on for a first predetermined time and turned off for a second predetermined time. 
     
     
         3 . The substrate processing apparatus of  claim 2 , wherein the second predetermined time is set to be longer than the first predetermined time. 
     
     
         4 . The substrate processing apparatus of  claim 2 , wherein the first predetermined time and the second predetermined time are capable of being varied. 
     
     
         5 . The substrate processing apparatus of  claim 2 , wherein the first predetermined time is set to be greater than 0.6 microsecond. 
     
     
         6 . The substrate processing apparatus of  claim 1 , wherein the dopant is provided with a dipole. 
     
     
         7 . The substrate processing apparatus of  claim 6 , wherein the dopant contains at least one of boron or phosphorus. 
     
     
         8 . The substrate processing apparatus of  claim 7 , wherein the at least one of boron or phosphorus is ion-implanted into the first film. 
     
     
         9 . The substrate processing apparatus of  claim 1 , wherein the first film comprises a silicon film. 
     
     
         10 . The substrate processing apparatus of  claim 9 , wherein the second film comprises an oxide film. 
     
     
         11 . The substrate processing apparatus of  claim 1 , wherein the first film is formed on the second film. 
     
     
         12 . The substrate processing apparatus of  claim 1 , wherein the electromagnetic wave comprises a microwave. 
     
     
         13 . The substrate processing apparatus of  claim 1 , further comprising a substrate retainer configured to be capable of supporting the substrate and one or more substrates. 
     
     
         14 . The substrate processing apparatus of  claim 1 , wherein the electromagnetic wave supplier is provided on a side surface of the process chamber. 
     
     
         15 . The substrate processing apparatus of  claim 14 , wherein a substrate loading/unloading port through which the substrate is transferred into or out of the process chamber is provided at a position opposite to the electromagnetic wave supplier. 
     
     
         16 . A substrate processing method comprising:
 (a) supplying an electromagnetic wave to a substrate with a first film doped with a dopant and a second film different from the first film formed on the substrate; and   (b) stopping supplying the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.   
     
     
         17 . A method of manufacturing a semiconductor device, comprising the substrate processing method of  claim 16 . 
     
     
         18 . A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
 (a) supplying an electromagnetic wave to a substrate with a first film doped with a dopant and a second film different from the first film formed on the substrate; and   (b) stopping supplying the electromagnetic wave before the second film is heated while the dopant is being heated by the electromagnetic wave.