Manufacturing method of quartz member, method for forming silica coating, and method for smoothing surface of quartz member

Abstract

A method for manufacturing a quartz member from a quartz substrate, including: contacting the quartz substrate with a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. A method for forming a silica coating, including: thermally spraying silica onto one surface of a quartz substrate, where the thermally spraying of the silica is performed by bringing a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. into contact with a surface of the quartz substrate opposite to the one surface. A method for forming a silica coating, including: depositing silica powder on an upper surface of a quartz substrate; and heating the silica powder, where the heating is performed in a state where a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. is in contact with a lower surface of the quartz substrate.

1 . A method for manufacturing a quartz member from a quartz substrate, comprising:
 contacting the quartz substrate with a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C.   
     
     
         2 . The method according to  claim 1 , further comprising:
 thermally spraying silica onto one side of the quartz substrate,   wherein the contacting of the quartz substrate comprises contacting a surface opposite the one side of the quartz substrate with the thermally conductive material during the thermally spraying of the silica.   
     
     
         3 . The method according to  claim 1 , further comprising:
 depositing silica powder onto one side of the quartz substrate; and   heating and melting the silica powder,   wherein the contacting of the quartz substrate comprises contacting a surface opposite the one side of the quartz substrate with the thermally conductive material during the heating and melting of the silica powder.   
     
     
         4 . The method according to  claim 1 , further comprising:
 heating one surface of the quartz member to smooth the surface,   wherein the contacting of the quartz substrate comprises contacting a surface opposite the one surface with the thermally conductive material in the heating of the one surface.   
     
     
         5 . The method according to  claim 4 , wherein the quartz member is heated in the heating of the one surface so that a surface temperature becomes 1690° C. or higher. 
     
     
         6 . The method according  claim 1 , wherein the thermal conductivity of the thermally conductive material is 38 W/m·K or more at 25° C. 
     
     
         7 . The method according to  claim 1 , wherein the thermally conductive material is a carbon material or silicon carbide. 
     
     
         8 . A method for forming a silica coating, comprising:
 thermally spraying silica onto one surface of a quartz substrate,   wherein the thermally spraying of the silica is performed by bringing a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. into contact with a surface of the quartz substrate opposite to the one surface.   
     
     
         9 . A method for forming a silica coating, comprising:
 depositing silica powder on an upper surface of a quartz substrate; and   heating the silica powder,   wherein the heating of the silica powder is performed in a state where a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. is in contact with a lower surface of the quartz substrate.   
     
     
         10 . The method according to  claim 8 , wherein the thermal conductivity of the thermally conductive material is 38 W/m·K or more at 25° C. 
     
     
         11 . A method for smoothing a surface of a quartz member, comprising:
 heating one side of the quartz member to 1690° C. or higher to smooth the surface,   wherein the heating of the one side of the quartz member is performed in a state where a thermally conductive material having a thermal conductivity of 30 W/m·K or more at 25° C. is in contact with an other side of the quartz member.   
     
     
         12 . The method according to  claim 11 , wherein the thermal conductivity of the thermally conductive material is 38 W/m·K or more at 25° C.