Cleaning solution, method for cleaning substrate, and method for manufacturing semiconductor

Abstract

A cleaning solution, a method for cleaning a substrate, and a method for manufacturing a semiconductor. The cleaning solution includes at least one of a compound a1 represented by a general formula (a1), a salt of the compound (a1), a hydrate of the compound (a1), hydrogen iodide, borane, and a complex of the borane; an amine compound that has 4 or more carbon atoms and is not the compound a1, or a salt thereof; and an anticorrosive agent,in which R1 and R2 each independently represents an organic group that does not contain a carbonyl group, or a hydrogen atom.

What is claimed is: 
     
         1 . A cleaning solution, comprising:
 at least one compound (A) selected from the group consisting of a compound a1 represented by a general formula (a1), a salt of the compound a1, a hydrate of the compound a1, hydrogen iodide, borane, and a complex of the borane;   an amine compound comprising 4 or more carbon atoms that is not the compound a1, or a salt thereof (B); and   an anticorrosive agent (C),   wherein the cleaning solution does not comprise an alkylamine comprising 1 to 3 carbon atoms, a hydroxylamine, tris(2-hydroxyethyl)methylammonium hydroxide (THEMAH), cetyl trimethylammonium hydroxide (CTAH), or choline,   
       
         
           
           
               
               
           
         
         wherein R 1  and R 2  each independently represents an organic group that does not comprise a carbonyl group, or a hydrogen atom. 
       
     
     
         2 . The cleaning solution according to  claim 1 , wherein the compound (A) comprises at least one selected from the group consisting of:
 a compound represented by the general formula (a1), wherein R 1  and R 2  are each independently a hydrogen atom or an alkyl group, a salt thereof, or a hydrate thereof;   a compound represented by the general formula (a1), wherein R 1  is a hydrogen atom, and R 2  is —R 3 OH, in which R 3  represents an alkylene group comprising 2 or more carbon atoms, a salt thereof, or a hydrate thereof;   hydrogen iodide; and   bis(pinacolato)diboron.   
     
     
         3 . The cleaning solution according to  claim 1 ,
 wherein the amine compound (B) comprises at least one selected from the group consisting of:
 H 2 N—R 4 —NH—R 5 —OH, in which R 4  and R 5  each independently represents an alkylene group comprising 2 or more carbon atoms; 
 H 2 N—R 6 —NH—R 7 —NH 2 , in which R 6  and R 7  each independently represents an alkylene group comprising 2 or more carbon atoms; 
 HO—R 8 —N(—R 9 —OH)—R 10 —OH, in which R 8 , R 9  and R 10  each independently represents an alkylene group comprising 2 or more carbon atoms; 
 a tertiary amine; and 
 a quaternary amine. 
   
     
     
         4 . The cleaning solution according to  claim 1 , wherein the anticorrosive agent (C) comprises at least one selected from the group consisting of an imidazole ring-containing compound, a triazole ring-containing compound, a pyridine ring-containing compound, a pyrimidine ring-containing compound, a tetrazole ring-containing compound, a pyrazole ring-containing compound, a purine ring-containing compound, a phenanthroline ring-containing compound, a thiol-containing compound, a phosphonic acid-containing compound, and a phosphinic acid-containing compound. 
     
     
         5 . The cleaning solution according to  claim 1 ,
 wherein the cleaning solution is for cleaning a substrate that has a region in which a first metal atom-containing layer comprising a cobalt atom and a second metal atom-containing layer comprising a copper atom are in contact with each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer are exposed on a surface of the substrate.   
     
     
         6 . The cleaning solution according to  claim 1 ,
 wherein a mass ratio of the content of the compound (A) and the content of the amine compound or a salt thereof (B) is from 20:1 to 1:30.   
     
     
         7 . The cleaning solution according to  claim 1 , wherein a mass ratio of the content of the compound (A) and the content of the anticorrosive agent (C) is from 1:5 to 150:1. 
     
     
         8 . A method for cleaning a substrate, comprising:
 cleaning the substrate using the cleaning solution according to  claim 1 ,   wherein the substrate has a region in which a first metal atom-containing layer comprising a cobalt atom and a second metal atom-containing layer comprising a copper atom are in contact with each other, and at least one of the first metal atom-containing layer and the second metal atom-containing layer are exposed on a surface of the substrate.   
     
     
         9 . The method according to  claim 8 , wherein the substrate comprises a wiring layer, and the wiring layer is the first metal atom-containing layer or the second metal atom-containing layer. 
     
     
         10 . The method according to  claim 8 , wherein the substrate comprises a wiring layer, and the first metal atom-containing layer is a copper-containing wiring layer, and the second metal atom-containing layer is a barrier layer or a liner layer. 
     
     
         11 . A method for manufacturing a semiconductor, comprising:
 preparing a substrate having a region in which a first metal atom-containing layer comprising a cobalt atom and a second metal atom-containing layer comprising a copper atom are in contact with each other, at least one of the first metal atom-containing layer and the second metal atom-containing layer are exposed on a surface of the substrate; and   cleaning the substrate using the cleaning solution according to  claim 1 .