Memory device and method of manufacturing the same

Abstract

A memory device, and a method of manufacturing the same, includes a first select line including a first cell area, a second select line including a second cell area disposed in a first direction from the first cell area, a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area, second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively, and a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.

What is claimed is: 
     
         1 . A memory device, comprising:
 a first select line including a first cell area;   a second select line including a second cell area disposed in a first direction from the first cell area;   a first separation pattern extending in a second direction intersecting the first direction between the first cell area and the second cell area;   second separation patterns extending from both ends of the first separation pattern in the first direction and a third direction opposite the first direction, respectively; and   a third separation pattern extending from at least one of the second separation patterns in the second direction, and disposed in a direction opposite the first separation pattern with respect to the at least one second separation pattern.   
     
     
         2 . The memory device according to  claim 1 , wherein the first select line comprises:
 a first contact area extending from the first cell area in the second direction.   
     
     
         3 . The memory device according to  claim 2 , wherein a width of the first cell area in the first direction is less than a width of the first contact area in the first direction. 
     
     
         4 . The memory device according to  claim 2 , wherein a width of the first contact area in the first direction is greater than a value obtained by adding a width of the first cell area in the first direction to a width of the second cell area in the first direction. 
     
     
         5 . The memory device according to  claim 2 , further comprising:
 a first select line contact coupled to the first contact area.   
     
     
         6 . The memory device according to  claim 5 , wherein the first select line contact is adjacent to the third separation pattern in the first direction. 
     
     
         7 . The memory device according to  claim 5 , wherein the first select line contact is adjacent to the first separation pattern in the second direction. 
     
     
         8 . The memory device according to  claim 2 , wherein the second select line further comprises:
 a second contact area extending from the second cell area in a fourth direction opposite the second direction.   
     
     
         9 . The memory device according to  claim 2 , further comprising:
 a third select line including a third cell area disposed in the first direction from the second cell area and a third contact area extending from the third cell area in the second direction.   
     
     
         10 . The memory device according to  claim 9 , wherein the at least one third separation pattern separates the first contact area from the third contact area. 
     
     
         11 . The memory device according to  claim 9 , wherein the third separation pattern separates the first select line from the third select line. 
     
     
         12 . The memory device according to  claim 9 , wherein the second select line and the third select line are separated from each other by the first separation pattern or by the first and second separation patterns. 
     
     
         13 . The memory device according to  claim 1 , wherein the first select line and the second select line are separated from each other by the first separation pattern and the second separation patterns. 
     
     
         14 . The memory device according to  claim 1 , wherein the third separation pattern extends from any one of both ends of the at least one second separation pattern. 
     
     
         15 . The memory device according to  claim 1 , wherein any one of both ends of the third separation pattern contacts a portion between both ends of a corresponding second separation pattern. 
     
     
         16 . The memory device according to  claim 1 , wherein each of the first separation pattern, the second separation patterns, and the third separation pattern includes an insulating material.