Display apparatus and method of manufacturing the same

Abstract

Provided are a display apparatus and a method of manufacturing the display apparatus. The display apparatus includes a pixel electrode configured to supply power to a subpixel; a common electrode; an organic transparent substrate; a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.

What is claimed is: 
     
         1 . A display apparatus comprising:
 a pixel electrode configured to supply power to a subpixel;   a common electrode;   an organic transparent substrate;   a driving layer provided on the organic transparent substrate and electrically connected to the pixel electrode, the driving layer including a driving device configured to control power on-off of the subpixel; and   a light emitting unit provided on the driving layer and including an inorganic material, the light emitting unit including a first semiconductor layer, an active layer, and a second semiconductor layer.   
     
     
         2 . The display apparatus of  claim 1 ,
 wherein the organic transparent substrate includes at least one of polyimide, polymethyl methacrylate (PMMA), plexiglass, polyethylene terephthalate (PET), transparent polypropylene, polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.   
     
     
         3 . The display apparatus of  claim 1 , wherein the display apparatus is a flexible display apparatus or a rollable display apparatus. 
     
     
         4 . The display apparatus of  claim 1 , further comprising:
 a coupling layer between the organic transparent substrate and the driving layer.   
     
     
         5 . The display apparatus of  claim 4 ,
 wherein the coupling layer includes at least one of benzocyclobutene (BCB), epoxy, or spin on glass (SOG).   
     
     
         6 . The display apparatus of  claim 1 ,
 wherein the light emitting unit includes a light emitting diode (LED) array structure.   
     
     
         7 . The display apparatus of  claim 1 ,
 wherein the driving layer has a thickness of about 2 μm or less.   
     
     
         8 . The display apparatus of  claim 1 ,
 wherein the light emitting unit has a thickness of about 2 μm to about 3 μm.   
     
     
         9 . The display apparatus of  claim 1 ,
 wherein the display apparatus has a pixel integration degree greater than or equal to 2,000 pixels per inch (ppi).   
     
     
         10 . The display apparatus of  claim 1 ,
 wherein the driving layer and the light emitting unit have a monolithic integration structure.   
     
     
         11 . The display apparatus of  claim 1 ,
 wherein the light emitting unit includes an isolated structure that isolates at least a part of a light emitting structure on a subpixel basis.   
     
     
         12 . The display apparatus of  claim 11 , further comprising:
 a current blocking layer in an area corresponding to the isolated structure of the driving layer.   
     
     
         13 . The display apparatus of  claim 1 , further comprising:
 a plurality of color conversion layers configured to convert light emitted from the light emitting unit into light with different colors.   
     
     
         14 . A method of manufacturing a display apparatus, the method comprising:
 forming a first semiconductor layer on an epitaxial substrate;   forming an active layer on the first semiconductor layer, the active layer including an inorganic material;   forming a second semiconductor layer on the active layer;   isolating the active layer on a subpixel basis by forming isolated structures on the active layer at an interval corresponding to a subpixel;   forming a first electrode on a subpixel basis on the second semiconductor layer;   forming a driving layer including a driving device, the driving device being electrically connected to the first electrode;   positioning the driving layer to face down and coupling the driving layer to an organic transparent substrate;   removing the epitaxial substrate; and   forming a second electrode on the first semiconductor layer.   
     
     
         15 . The method of  claim 14 ,
 wherein the isolating the active layer on a subpixel basis comprises forming an ion implantation area.   
     
     
         16 . The method of  claim 14 ,
 wherein the organic transparent substrate includes at least one of polyimide, polymethyl methacrylate (PMMA), plexiglass, polyethylene terephthalate (PET), transparent polypropylene, polycarbonate, polyethylene naphthalate, polyarylate (PAR), polyetherimide, or any combination thereof.   
     
     
         17 . The method of  claim 14 ,
 wherein the organic transparent substrate is a flexible transparent substrate.   
     
     
         18 . The method of  claim 14 ,
 wherein the forming the driving layer forms the driving layer that has a thickness of about 2 μm or less.   
     
     
         19 . The method of  claim 14 ,
 wherein the forming the first semiconductor layer, the forming the active layer, and the forming the second semiconductor layer forms a light emitting unit that has a thickness of about 2 μm to about 3 μm.   
     
     
         20 . The method of  claim 14 ,
 wherein the forming the isolated structures and the forming the first electrode are based on a subpixel basis that corresponds to a pixel integration degree greater than or equal to 2,000 pixels per inch (ppi).