Substrate-processing method and substrate-processing apparatus

Abstract

A substrate-processing method for processing a substrate includes (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate, (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate held by the substrate holder, and (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes over a center of the substrate. In (C), a speed of a relative movement of the nozzle gas discharge mechanism is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole.

What is claimed is: 
     
         1 . A substrate-processing method for processing a substrate, the substrate-processing method comprising:
 (A) holding the substrate by a substrate holder in a process chamber and rotating the substrate;   (B) discharging gas from a discharge hole of a nozzle gas discharge mechanism toward the substrate held by the substrate holder; and   (C) moving the nozzle gas discharge mechanism relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes over a center of the substrate, wherein   in (C), a speed of a relative movement of the nozzle gas discharge mechanism is changed in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole.   
     
     
         2 . The substrate-processing method according to  claim 1 , wherein
 in (C), the speed of the relative movement is set to be lower as a surface area of the section becomes larger.   
     
     
         3 . The substrate-processing method according to  claim 2 , wherein
 in (C), the speed of the relative movement on an outer edge side of the substrate is set to be lower than the speed of the relative movement at a center area of the substrate.   
     
     
         4 . The substrate-processing method according to  claim 2 , wherein
 in (C), the speed of the relative movement is set in accordance with a surface area of the substrate, the surface area including a surface area of a pattern formed at the surface of the substrate.   
     
     
         5 . The substrate-processing method according to  claim 2 , wherein
 in (C), the surface of the substrate is divided into multiple sections, and the speed of the relative movement is set for each of the multiple sections.   
     
     
         6 . The substrate-processing method according to  claim 1 , wherein
 in (C), the speed of the relative movement is set in accordance with a target shape of a film to be formed on the surface of the substrate.   
     
     
         7 . The substrate-processing method according to  claim 1 , wherein
 the nozzle gas discharge mechanism includes a first nozzle gas discharge mechanism and a second nozzle gas discharge mechanism that are configured to discharge the gas to the substrate held by the substrate holder, wherein   in (C), the first nozzle gas discharge mechanism and the second nozzle gas discharge mechanism are caused to swing independently of each other while the substrate is being rotated in (A).   
     
     
         8 . The substrate-processing method according to  claim 7 , wherein
 the first nozzle gas discharge mechanism includes
 a first nozzle extending in the process chamber, 
 a first nozzle driver provided at a base end of the first nozzle and configured to swing the first nozzle, and 
 a first head provided at a tip end of the first nozzle and configured to discharge a first process gas as the gas, and 
   the second nozzle gas discharge mechanism includes
 a second nozzle extending in the process chamber, 
 a second nozzle driver provided at a base end of the second nozzle and configured to swing the second nozzle, and 
 a second head provided at a tip end of the second nozzle and configured to discharge a second process gas as the gas. 
   
     
     
         9 . The substrate-processing method according to  claim 8 , wherein
 in (C), the first head and the second head are caused to repeatedly move over at least a range between the center of the substrate held by the substrate holder and an outer edge of the substrate.   
     
     
         10 . A substrate-processing apparatus for processing a substrate, the substrate-processing apparatus comprising:
 a process chamber configured to house the substrate;   a substrate holder configured to hold the substrate in the process chamber and rotate the substrate;   a nozzle gas discharge mechanism including a discharge hole for discharging gas toward the substrate held by the substrate holder and being movable relative to the substrate in a direction parallel to a surface of the substrate held by the substrate holder so that the discharge hole passes over a center of the substrate; and   a controller configured to control the nozzle gas discharge mechanism, wherein   the controller includes
 a processor, and 
 a memory storing one or more programs, which when executed, cause the processor to: 
   change a speed of a relative movement of the nozzle gas discharge mechanism in accordance with a surface area of a section of the substrate, the section being faced by the discharge hole.