Resist composition, method for forming resist pattern, compound, and acid diffusion control agent

Abstract

A resist composition containing a resin component (A1) and a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid. In the formula, Rm represents a hydrogen atom or a hydroxy group, X0 represents a bromine atom or an iodine atom, Yd0 represents a divalent linking group or a single bond, Rb1 represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, and Rb2 and Rb3 are hydrocarbon groups, provided that at least one Rb1 is bonded to an ortho-position or a meta-position of a benzene ring, and the number of all fluorine atoms contained in —F and/or —CFRx1Rx2 bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx1 and Rx2 represent a fluorine atom or a hydrogen atom

What is claimed is: 
     
         1 . A resist composition which generates an acid upon exposure to light and whose solubility in a developing solution is changed under action of an acid, the resist composition comprising:
 a resin component (A1) whose solubility in a developing solution is changed under action of an acid; and   an acid diffusion control agent component (D) which controls an acid generated upon exposure to light,   wherein the acid diffusion control agent component (D) contains a photodecomposable base (D0) represented by General Formula (d0) that generates a carboxylic acid having a pKa of 0.50 or more as a generated acid,   
       
         
           
           
               
               
           
         
         wherein R m  represents a hydrogen atom or a hydroxy group, X 0  represents a bromine atom or an iodine atom, nb1 represents an integer in a range of 1 to 4, Yd 0  represents a divalent linking group or a single bond, Rb 1  represents a fluorine atom or a fluorinated alkyl group, p01 represents an integer in a range of 1 to 5, Rb 2  and Rb 3  each independently represent a hydrocarbon group which may have a substituent, Rb 2  and Rb 3  may be bonded to each other to form a ring together with a sulfur atom in the formula, Rb 2  and Rb 3  may form a condensed ring together with a benzene ring and a sulfur atom in the formula, at least one Rb 1  is bonded to an ortho-position or a meta-position of the benzene ring, the number of all fluorine atoms contained in —F and/or —CFRx 1 Rx 2 , which are bonded to an aromatic ring bonded to the sulfur atom in the formula is 3 or more, and Rx 1  and Rx 2  each independently represent a fluorine atom or a hydrogen atom. 
       
     
     
         2 . A method for forming a resist pattern, the method comprising:
 forming a resist film on a support using the resist composition according to claim  1 ;   exposing the resist film to light; and   developing the resist film exposed to light to form a resist pattern.   
     
     
         3 . The method for forming a resist pattern according to  claim 2 , wherein the resist film is exposed to an extreme ultraviolet ray or an electron beam in exposing the resist film to light.