Metal oxide material and preparation method therefor, and optoelectronic device

Abstract

The present disclosure discloses a metal oxide material and a preparation method therefor, and an optoelectronic device. The prepared metal oxide material comprises metal oxide nanoparticles, and on or both of halogenated acid ligands and halogenated alcohol ligands connected to the surfaces of the metal oxide nanoparticles. The ligands can effectively passivate defects of the metal oxide nanoparticles, thereby improving the luminous efficiency of the optoelectronic device and prolonging the service life of the optoelectronic device.

1 . A method for preparing a metal oxide material, comprising:
 providing a metal salt solution, wherein the metal salt solution comprises a metal salt;   adding a halogenated compound to the metal salt solution to obtain a precursor solution, wherein the halogenated compound is selected from one or both of a halogenated acid and a halogenated alcohol;   adding an alkali into the precursor solution and reacting to obtain a metal oxide material, wherein the metal oxide material comprises a metal oxide nanoparticle and a halogenated ligand connected to a surface of the metal oxide nanoparticle, the halogenated ligand comprises one or both of a halogenated acid ligand and a halogenated alcohol ligand.   
     
     
         2 . The method according to  claim 1 , wherein a molar ratio of the metal salt to the halogenated compound ranges from 0.05:1 to 2:1. 
     
     
         3 . The method according to  claim 1 , wherein the metal salt is selected from one or more of nickel salt, vanadium salt, titanium salt, tin salt, and zinc salt. 
     
     
         4 . The method according to  claim 1 , wherein a concentration of the metal salt in the metal salt solution ranges from 0.067 mmol/mL to 133 mmol/mL. 
     
     
         5 . The method according to  claim 1 , wherein a concentration of the metal salt in the metal salt solution ranges from 0.067 mmol/mL to 1 mmol/mL. 
     
     
         6 . The method according to  claim 1 , wherein a molar ratio of the alkali to the metal salt ranges from 1:1 to 1:1.5. 
     
     
         7 . The method according to  claim 1 , wherein the alkali is selected from one or more of potassium hydroxide, sodium hydroxide, and lithium hydroxide. 
     
     
         8 . The method according to  claim 1 , wherein the halogenated acid is a halogenated acetic acid, the halogenated alcohol is a halogenated ethanol, the halogenated acetic acid is selected from one or more of monochlorinated acetic acid, dichlorinated acetic acid, trichlorinated acetic acid, trifluorinated acetic acid, and tribrominated acetic acid, and the halogenated ethanol is selected from one or more of monochlorinated ethanol, dichlorinated ethanol, trichlorinated ethanol, trifluorinated ethanol, and tribrominated ethanol. 
     
     
         9 . The method according to  claim 1 , wherein the reacting is carried out at a temperature ranging from 25° C. to 200° C. 
     
     
         10 . The method according to  claim 1 , wherein a doped metal compound is further added to the metal salt solution, the doped metal compound is selected from one or more of a compound of copper, a compound of aluminum, a compound of tungsten, a compound of nickel, a compound of magnesium, a compound of titanium, a compound of tin, a compound of molybdenum, a compound of niobium, a compound of europium, a compound of zinc, a compound of manganese, a compound of zirconium, a compound of lithium, a compound of gallium, a compound of lanthanum, and a compound of ytterbium. 
     
     
         11 . The method according to  claim 10 , wherein a molar ratio of the doped metal to the metal salt ranges from 1:19 to 1:4. 
     
     
         12 . The method according to  claim 11 , wherein a doped metal element is doped in the metal oxide nanoparticle of the metal oxide material, the doped metal element is selected from one or more of Cu, Al, Wu, Ni, Mg, Ti, Sn, Mo, Nb, Eu, Zn, Mn, Zr, Li, Ga, La, and Yb, in the metal oxide material, a molar percentage content of the doped metal element ranges from 1% to 30%. 
     
     
         13 . A metal oxide material, wherein the metal oxide material comprises a metal oxide nanoparticle and a halogenated ligand connected to a surface of the metal oxide nanoparticle, wherein the halogenated ligand comprises one or both of a halogenated acid ligand and a halogenated alcohol ligand. 
     
     
         14 . The metal oxide material according to  claim 13 , wherein a halogenated acid of the halogenated acid ligand is a halogenated acetic acid, and a halogenated alcohol of the halogenated alcohol ligand is a halogenated ethanol, the halogenated acetic acid is selected from one or more of monochlorinated acetic acid, dichlorinated acetic acid, trichlorinated acetic acid, trifluorinated acetic acid, and tribrominated acetic acid, and the halogenated ethanol is selected from one or more of monochlorinated ethanol, dichlorinated ethanol, trichlorinated ethanol, trifluorinated ethanol, and tribrominated ethanol. 
     
     
         15 . The metal oxide material according to  claim 13 , wherein in the metal oxide material, a content of the halogenated ligand ranges from 10 wt % to 50 wt %. 
     
     
         16 . The metal oxide material according to  claim 13 , wherein the metal oxide nanoparticle is selected from one or more of NiO x , VO y , TiO 2 , SnO 2 , and ZnO, wherein the x is 1 or 1.5, and the y is 1, 1.5, 2 or 2.5. 
     
     
         17 . The metal oxide material according to  claim 13 , wherein a doped metal element is doped in the metal oxide nanoparticle of the metal oxide material, the doped metal element is selected from one or more of Cu, Al, Wu, Ni, Mg, Ti, Sn, Mo, Nb, Eu, Zn, Mn, Zr, Li, Ga, La, and Yb, and a molar percentage content of the doped metal element ranges from 1% to 30%. 
     
     
         18 . An optoelectronic device comprising layers of an anode, a light-emitting layer, and a cathode, the optoelectronic device further comprises at least one carrier functional layer, wherein each of the at least one carrier functional layer comprises the metal oxide material according to  claim 13 . 
     
     
         19 . The optoelectronic device according to  claim 18 , wherein the at least one carrier functional layer is a hole injection layer or a hole transport layer, the hole injection layer or the hole transport layer is disposed between the anode and the light-emitting layer, the metal oxide nanoparticle of the metal oxide material are selected from one or more of NiO x , and VO y , wherein the x is 1 or 1.5, and the y is 1, 1.5, 2 or 2.5. 
     
     
         20 . The optoelectronic device according to  claim 18 , wherein the at least one carrier functional layer is an electron transport layer, wherein the electron transport layer is disposed between the cathode and the light-emitting layer, the metal oxide nanoparticle of the metal oxide material is selected from one or more of ZnO, TiO 2 , and SnO 2 . 
     
     
         21 . (canceled)