Integrated chip with good thermal dissipation performance

Abstract

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate. A semiconductor device is disposed on the substrate. An interlayer dielectric (ILD) structure is disposed over the substrate and the semiconductor device. A first intermetal dielectric (IMD) structure is disposed over the substrate and the ILD structure. An opening is disposed in the first IMD structure. The opening overlies at least a portion of the semiconductor device.

What is claimed is: 
     
         1 . An integrated chip (IC), comprising:
 a substrate;   a semiconductor device disposed on the substrate;   an interlayer dielectric (ILD) structure disposed over the substrate and the semiconductor device;   a first intermetal dielectric (IMD) structure disposed over the substrate and the ILD structure; and   an opening disposed in the first IMD structure, wherein the opening overlies at least a portion of the semiconductor device.   
     
     
         2 . The IC of  claim 1 , wherein:
 the substrate is a semiconductor-on-insulator (SOI) substrate;   the SOI substrate comprises a device layer disposed over an insulating layer; and   the semiconductor device is disposed on the device layer.   
     
     
         3 . The IC of  claim 1 , wherein the opening has a perimeter defined by sidewalls of the first IMD structure, and wherein the portion of the semiconductor device is disposed laterally within the perimeter of the opening. 
     
     
         4 . The IC of  claim 3 , further comprising:
 a passivation layer disposed over the first IMD structure, wherein the perimeter of the opening is defined by the sidewalls of the first IMD structure and sidewalls of the passivation layer.   
     
     
         5 . The IC of  claim 3 , wherein the perimeter of the opening laterally surrounds the portion of the semiconductor device in a closed loop path. 
     
     
         6 . The IC of  claim 5 , wherein:
 the semiconductor device comprises a gate electrode; and   the gate electrode is disposed within the perimeter of the opening.   
     
     
         7 . The IC of  claim 6 , wherein:
 the semiconductor device comprises a pair of source/drain regions; and   the pair of source/drain regions is disposed within the perimeter of the opening.   
     
     
         8 . The IC of  claim 5 , further comprising:
 an isolation structure disposed in the substrate and laterally surrounding the semiconductor device, wherein the perimeter of the opening overlies and is substantially aligned with a layout of the isolation structure.   
     
     
         9 . The IC of  claim 8 , wherein:
 the isolation structure has an inner perimeter and an outer perimeter; and   the perimeter of the opening is disposed laterally between the inner perimeter of the isolation structure and the outer perimeter of the isolation structure.   
     
     
         10 . The IC of  claim 5 , further comprising:
 a first doped well region disposed in the substrate, wherein a pair of source/drain regions of the semiconductor device are disposed in the first doped well region; and   a second doped well region disposed in the substrate, wherein the first doped well region is disposed at least partially in the second doped well region, wherein the second doped well region has an opposite doping type as the first doped well region, and wherein the perimeter of the opening laterally surrounds the first doped well region.   
     
     
         11 . The IC of  claim 10 , wherein the perimeter of the opening is disposed laterally between a perimeter of the first doped well region and a perimeter of the second doped well region. 
     
     
         12 . The IC of  claim 1 , further comprising:
 a conductive interconnect structure embedded in the ILD structure and the first IMD structure, wherein the conductive interconnect structure comprises a plurality of conductive layers that are vertically stacked, wherein each of the conductive layers comprises one or more conductive wires, and wherein one or more of the conductive layers are disposed vertically between a bottom of the opening and an upper surface of the first IMD structure.   
     
     
         13 . The IC of  claim 12 , wherein each of the one or more conductive wires of each of the plurality of conductive layers are spaced from the opening. 
     
     
         14 . The IC of  claim 13 , further comprising:
 a second IMD structure disposed over the ILD structure, wherein:
 the second IMD structure is disposed vertically between the first IMD structure and the ILD structure; 
 the conductive interconnect structure is embedded in the second IMD structure; 
 the conductive interconnect structure comprises a first group of conductive features embedded in the first IMD structure and on a first side of the opening; 
 the conductive interconnect structure comprises a second group of conductive features embedded in the first IMD structure and on a second side of the opening opposite the first side; 
 the conductive interconnect structure comprises a third group of conductive features embedded in the second IMD structure and beneath the first IMD structure; and 
 the third group of conductive features electrically couples the first group of conductive features to the second group of conductive features. 
   
     
     
         15 . An integrated circuit (IC) comprising:
 a substrate having a front side surface opposite a back side surface;   a semiconductor device disposed on the front side surface of the substrate;   an insulating layer disposed on the back side surface of the substrate;   a conductive layer disposed on the insulating layer; and   a back side dielectric structure disposed along the conductive layer, wherein an opening is disposed within the back side dielectric structure and directly underlies at least a portion of the semiconductor device.   
     
     
         16 . The IC of  claim 15 , wherein a top surface of the opening is defined by a bottom surface of the conductive layer. 
     
     
         17 . The IC of  claim 15 , wherein a perimeter of the opening is defined by a plurality of sidewalls of the back side dielectric structure, wherein the semiconductor device is spaced laterally within the perimeter of the opening. 
     
     
         18 . The IC of  claim 17 , further comprising:
 a deep trench isolation (DTI) structure extending into the front side surface of the substrate and laterally enclosing the semiconductor device, wherein the DTI structure directly overlies a first sidewall of the plurality of sidewalls.   
     
     
         19 . An integrated chip (IC), comprising:
 a semiconductor device disposed on a substrate, wherein the semiconductor device comprises a gate structure laterally arranged between source/drain regions;   a dielectric structure disposed on the substrate;   a plurality of conductive features disposed within the dielectric structure; and   wherein sidewalls of the dielectric structure form an opening that is directly over the semiconductor device and that laterally extends past opposing outermost sidewalls of the gate structure, the plurality of conductive features being laterally spaced from the opening by the sidewalls of the dielectric structure.   
     
     
         20 . The IC of  claim 19 , wherein the dielectric structure comprises a plurality of dielectric layers stacked onto one another and respectively surrounding different ones of the plurality of conductive features that have different widths, the opening vertically extending through the plurality of dielectric layers.