Plating system and method of plating wafer

Abstract

A plating system is provided. The plating system includes an electroplating chamber defining a plating region within which a wafer is plated. The electroplating chamber includes an inlet configured to introduce plating solution into the plating region of the electroplating chamber. The electroplating chamber includes an outlet configured to remove the plating solution from the plating region of the electroplating chamber. The plating system includes a barrier configured to inhibit removal of the plating solution from the plating region.

What is claimed is: 
     
         1 . A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated;   a barrier configured to inhibit removal of a plating solution from the plating region by reflecting some of the plating solution;   one or more sensors configured to measure at least one of a plating thickness, a pressure of the plating solution, or a direction of flow of the plating solution to obtain a parameter; and   a barrier adjustment device configured to adjust a position of the barrier based upon the parameter, wherein the position of the barrier corresponds to at least one of a vertical position of the barrier or a horizontal position of the barrier.   
     
     
         2 . The plating system of  claim 1 , wherein the electroplating chamber comprises:
 an inlet configured to introduce the plating solution into the plating region; and   an outlet configured to remove the plating solution from the plating region.   
     
     
         3 . The plating system of  claim 1 , wherein the barrier adjustment device is further configured to adjust an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier, wherein the inner sidewall of the barrier faces the plating region. 
     
     
         4 . The plating system of  claim 3 , wherein the barrier adjustment device is configured to adjust the angle based upon the parameter. 
     
     
         5 . The plating system of  claim 1 , comprising:
 a high resistance virtual anode (HRVA) configured to control a uniformity of a current distribution across a surface of the wafer.   
     
     
         6 . The plating system of  claim 1 , comprising an anode. 
     
     
         7 . The plating system of  claim 6 , wherein:
 the wafer is over the barrier, and   the barrier is over the anode.   
     
     
         8 . The plating system of  claim 6 , wherein:
 an opening in the anode overlies an inlet of the electroplating chamber through which the plating solution is introduced into the plating region, and   the plating system comprises a pump configured to conduct the plating solution into the plating region via the inlet.   
     
     
         9 . The plating system of  claim 6 , wherein the electroplating chamber comprises:
 a cone overlying the wafer; and   a wafer support structure configured to maintain a position of the wafer between the anode and the cone.   
     
     
         10 . The plating system of  claim 1 , comprising:
 a rotational structure configured to rotate the wafer in the electroplating chamber.   
     
     
         11 . The plating system of  claim 1 , comprising:
 a high resistance virtual anode (HRVA) within the electroplating chamber, wherein the barrier overlies the HRVA;   an anode within the electroplating chamber; and   a membrane within the electroplating chamber, wherein the membrane is between the anode and the HRVA.   
     
     
         12 . A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated;   an anode within the electroplating chamber;   a barrier configured to reflect some of a plating solution used for plating the wafer toward the plating region;   a high resistance virtual anode (HRVA) within the electroplating chamber, wherein the barrier overlies the HRVA;   one or more sensors configured to sense a parameter of a plating process performed for plating the wafer with anode material of the anode; and   a barrier adjustment device configured to adjust at least one of a position of the barrier or an orientation of the barrier to adjust a direction of flow of the some of the plating solution reflected by the barrier based upon the parameter.   
     
     
         13 . The plating system of  claim 12 , wherein the position of the barrier corresponds to at least one of:
 a vertical position of the barrier; or   a horizontal position of the barrier.   
     
     
         14 . The plating system of  claim 12 , wherein the orientation of the barrier corresponds to an angle of an inner sidewall of the barrier with respect to a surface of the HRVA. 
     
     
         15 . The plating system of  claim 14 , wherein the inner sidewall faces the plating region and is configured to reflect the some of the plating solution. 
     
     
         16 . A plating system, comprising:
 an electroplating chamber defining a plating region within which a wafer is plated, wherein the electroplating chamber comprises an outlet configured to remove plating solution from the plating region;   a barrier disposed at the outlet and configured to inhibit removal of the plating solution through the outlet by reflecting some of the plating solution toward the plating region;   one or more sensors configured to sense a parameter of a plating process performed for plating the wafer with anode material of an anode; and   a barrier adjustment device configured to adjust at least one of a position of the barrier or an orientation of the barrier to adjust a direction of flow of the some of the plating solution reflected by the barrier based upon the parameter.   
     
     
         17 . The plating system of  claim 16 , wherein the position of the barrier corresponds to at least one of:
 a vertical position of the barrier; or   a horizontal position of the barrier.   
     
     
         18 . The plating system of  claim 16 , wherein the orientation of the barrier corresponds to an angle of an inner sidewall of the barrier with respect to a surface underlying the barrier. 
     
     
         19 . The plating system of  claim 16 , comprising:
 a membrane disposed within a pathway of the plating solution from an inlet of the electroplating chamber to the outlet.   
     
     
         20 . The plating system of  claim 16 , comprising:
 a high resistance virtual anode (HRVA) within the electroplating chamber, wherein the barrier overlies the HRVA.