US2024355977A1PendingUtilityA1

Micro led structure and micro led projector

Assignee: JADE BIRD DISPLAY SHANGHAI LTDPriority: Dec 31, 2021Filed: Jun 30, 2024Published: Oct 24, 2024
Est. expiryDec 31, 2041(~15.4 yrs left)· nominal 20-yr term from priority
H10W 90/00H10H 20/855H10H 20/856H10H 20/857H10H 20/841H10H 20/819H10H 20/812G02B 27/283G02B 27/10G03B 21/2013G03B 21/2073G03B 21/2033H10H 20/8583H01L 33/644H01L 33/62H01L 25/0753H01L 33/60G02B 27/30
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Claims

Abstract

Disclosed herein are a micro LED structure and a micro LED projector. The micro LED structure comprises: a mesa structure and a reflective structure; wherein, the rays emitted from the sidewall of the mesa structure can be reflected by the reflective structure toward outside. The present disclosure can control the chief ray angle of the micro LED structure and reduce the loss of the light emitting from the sidewall of the mesa structure.

Claims

exact text as granted — not AI-modified
1 . A micro LED structure, comprising:
 a mesa structure, emitting rays; and,   a reflective structure, formed around the mesa structure, wherein,   the rays emitted from the sidewall of the mesa structure is reflected by the reflective structure toward outside.   
     
     
         2 . The micro LED structure according to  claim 1 , wherein, the chief ray angle of the rays being reflected by the reflective structure is in the range of 0˜45°. 
     
     
         3 . The micro LED structure according to  claim 1 , wherein, the center axis of the reflective structure is not vertically aligned with the center axis of the mesa structure. 
     
     
         4 . The micro LED structure according to  claim 3 , wherein, the distance between the center axis of the reflective structure and the center axis of the mesa structure is greater than the half of the bottom width of the mesa structure and not greater than the bottom width of the mesa structure. 
     
     
         5 . The micro LED structure according to  claim 1 , wherein, the inclined angle of the sidewall of the reflective structure facing the mesa structure is in the range of 30°˜90°. 
     
     
         6 . The micro LED structure according to  claim 1 , wherein, the bottom width of the reflective structure is in the range of 10%˜90% of the space between the bottom edge of the mesa structure and the bottom edge of the reflective structure. 
     
     
         7 . The micro LED structure according to  claim 1 , wherein, the height of the reflective structure is in the range of 10%˜200% of the height of the mesa structure. 
     
     
         8 . The micro LED structure according to  claim 1 , wherein, the inclination direction of the sidewall of the mesa structure is cross with the inclination direction of the sidewall of the reflective structure, which faces the mesa structure. 
     
     
         9 . The micro LED structure according to  claim 1 , wherein, the inclination direction of the sidewall of the mesa structure is parallel to the inclination direction of the sidewall of the reflective structure, which faces the mesa structure. 
     
     
         10 . The micro LED structure according to  claim 1 , wherein, the micro LED structure further comprises a top conductive layer, formed on the top of the mesa structure. 
     
     
         11 . The micro LED structure according to  claim 10 , wherein, the top conductive layer is formed on the top of the mesa structure to be electrically connected with the reflective structure. 
     
     
         12 . The micro LED structure according to  claim 1 , wherein, the reflective structure is made of high reflective metal, a distributed Bragg reflector or a high reflective polymer. 
     
     
         13 . The micro LED structure according to  claim 12 , wherein, the high reflective metal is selected from one or more of Ag, Au, and Al; or, the high reflective polymer is polytetrafluoroethylene. 
     
     
         14 . The micro LED structure according to  claim 1 , wherein, the mesa structure comprises a light emitting unit; wherein the light emitting unit comprises a first semiconductor layer, a second semiconductor layer, and a light emitting layer formed between the first semiconductor layer and the second semiconductor layer; and the conductive type of the first semiconductor layer is different from the conductive type of the second semiconductor layer. 
     
     
         15 . The micro LED structure according to  claim 14 , wherein, the mesa structure comprises multiple light emitting unit; and the light emitting units emit different color rays. 
     
     
         16 . The micro LED structure according to  claim 14 , wherein, the light emitting layer is made by a quantum dot well. 
     
     
         17 . A micro LED projector, comprising:
 a first color micro LED panel, emitting a first color ray; wherein, the first color micro LED panel comprises the micro LED structure according to  claim 1 ;   a second color micro LED panel, emitting a second color ray; wherein, the first color is different from the second color; wherein, the second color micro LED panel comprises the micro LED structure according to  claim 1 ;   an optical combination element, receiving the first color ray emitted from the first color micro LED panel and receiving the second color ray emitted from the second color micro LED panel.   
     
     
         18 . The micro LED projector according to  claim 17 , wherein, the optical combination element comprises a polarizing spectroscopic film on an inclined interface, facing the ray emitting direction of the first color micro LED panel or the ray emitting direction of the second color micro LED panel. 
     
     
         19 . The micro LED projector according to  claim 17 , wherein, the chief ray angle of the micro LEDs in the first micro LED panel and the chief ray angle of the micro LEDs in the second micro LED panel are symmetrical based on the inclined interface. 
     
     
         20 . The micro LED projector according to  claim 17 , wherein, the optical combination element comprises two lenses, wherein each of the lens has an inclined interface; and the inclined interfaces of the two lenses are combined together with a diachronic film formed on the inclined interface. 
     
     
         21 . The micro LED projector according to  claim 18 , wherein, the micro LED projector further comprises a third color micro LED panel comprising the micro LED structure according to  claim 1 , emitting a third color ray; wherein, the first color, the second color and the third color are different from each other. 
     
     
         22 . The micro LED projector according to  claim 21 , wherein, the optical combination element comprises a polarizing spectroscopic film on another interface, facing the third color ray emitting direction of the third color micro LED panel;
 the chief ray angle of the micro LEDs in the second micro LED panel and the chief ray angle of the micro LEDs in the third micro LED panel are symmetrical based on the another interface.   
     
     
         23 . The micro LED projector according to  claim 22 , wherein, the optical combination element is an inclined diachronic prism or an X-cube. 
     
     
         24 . The micro LED projector according to  claim 17 , wherein, the minimum distance between the micro LED panel and the surface of the optical combination element facing the micro LED panel is not greater than twice of the thickness of the micro LED panel. 
     
     
         25 . A micro LED display device, comprising:
 a circuit board having a first end and a second end;   a micro display panel configured on a first surface of the first end of the circuit board and electrically connected to the circuit board;   a support base formed on a second surface of the first end of the circuit board, wherein the second surface of the first end is opposite to the first surface of the first end;   a flash memory formed on a first surface of the second end of the circuit board and electrically connected to the circuit board;   a connector formed on a second surface of the second end of the circuit board, wherein the second surface of the second end is opposite to the first surface of the second end; and   a central processing unit formed between the connector and the second surface of the second end of the circuit board and electrically connected to the circuit board.   
     
     
         26 . The micro LED display device according to  claim 25 , wherein the micro display panel and the flash memory are on the same surface of the circuit board. 
     
     
         27 . The micro LED display device according to  claim 25 , wherein the support base and the connector are on the same surface of the circuit board. 
     
     
         28 . The micro LED display device according to  claim 25 , wherein an edge of the micro display panel is configured not to exceed an edge of the circuit board. 
     
     
         29 . The micro LED display device according to  claim 25 , wherein an edge of the support base is configured not to exceed an edge of the circuit board. 
     
     
         30 . The micro LED display device according to  claim 25 , wherein an edge of the flash memory is configured not to exceed an edge of the circuit board. 
     
     
         31 . The micro LED display device according to  claim 25 , wherein an edge of the connector is not to exceed an edge of the circuit board. 
     
     
         32 . The micro LED display device according to  claim 25 , wherein the central processing unit is electronically coupled to the flash memory. 
     
     
         33 . The micro LED display device according to  claim 25 , wherein the circuit board is configured to be a strip shape. 
     
     
         34 . The micro LED display device according to  claim 25 , wherein the circuit board comprises flexible material configured to withstand bending force. 
     
     
         35 . The micro LED display device according to  claim 25 , further comprising a cooling element configured to transfer heat of the micro display panel. 
     
     
         36 . The micro LED display device according to  claim 35 , wherein the cooling element is formed on a back of the support base, and between the support base and the circuit board.

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