Methods of forming a temperature compensated dielectric material

Abstract

Disclosed are methods of forming a dielectric material. One method comprises modifying a tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material.

1 . A method of forming a dielectric material, the method comprising modifying a Ba—Sm—Ti—Ta—O tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material, the dielectric material thereby having a dielectric constant of at least 60 and a temperature coefficient of resonant frequency of less than 15. 
     
     
         2 . The method of  claim 1  wherein the Ba—Sm—Ti—Ta—O tungsten bronze crystal structure is an orthorhombic tungsten bronze crystal structure and the one or more elements includes tantalum. 
     
     
         3 . The method of  claim 1  wherein the dielectric material has a formula:
   Ba 12 Sm 28−x Ti 54−3x Ta 3x O 162  or Ba 12+3x Sm 28−3x Ti 54−3x Ta 3x O 162 , x being between 0 and 3. 
 
     
     
         4 . The method of  claim 3  wherein the dielectric material has a formula
   Ba 12.6 Sm 27.4 Ti 53.4 Ta 0.6 O 162 . 
 
     
     
         5 . The method of  claim 1  wherein the temperature coefficient of resonant frequency of less than 5. 
     
     
         6 . The method of  claim 1  wherein the dielectric material includes CeO 2 . 
     
     
         7 . The method of  claim 1  wherein the dielectric material has a Qf at 1 GHz of at least 7000. 
     
     
         8 . The method of  claim 1  wherein the dielectric material has no aluminum. 
     
     
         9 . A method of forming a dielectric material having a composition Ba 12.45 Sm 27.65 Ti 53.55 Ta 0.45 O 162  and including a tungsten bronze crystal structure, the method comprising modifying the tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material, the dielectric material thereby having a dielectric constant of at least 60 and a temperature coefficient of resonant frequency of less than 15. 
     
     
         10 . A method of forming a dielectric material having a composition Ba 12.15 Sm 27.75 Ti 53.55 Ta 0.45 O 162  and including a tungsten bronze crystal structure, the method comprising modifying the tungsten bronze crystal structure by substituting one or more lattice sites with one or more elements selected to increase a quality factor (Q) of the dielectric material, the dielectric material thereby having a dielectric constant of at least 60 and a temperature coefficient of resonant frequency of less than 15. 
     
     
         11 . The method of  claim 9  wherein the tungsten bronze crystal structure is an orthorhombic tungsten bronze crystal structure and the one or more elements includes tantalum. 
     
     
         12 . The method of  claim 9  wherein the temperature coefficient of resonant frequency is of less than 5. 
     
     
         13 . The method of  claim 9  wherein the dielectric material further includes further includes CeO 2 . 
     
     
         14 . The method of  claim 9  wherein the dielectric material has a Qf at 1 GHz of at least 7000. 
     
     
         15 . The method of  claim 10  wherein the dielectric material has no aluminum. 
     
     
         16 . The method of  claim 10  wherein the tungsten bronze crystal structure is an orthorhombic tungsten bronze crystal structure and the one or more elements includes tantalum. 
     
     
         17 . The method of  claim 10  wherein the temperature coefficient of resonant frequency is of less than 5. 
     
     
         18 . The method of  claim 10  wherein the dielectric material further includes further includes CeO 2 . 
     
     
         19 . The method of  claim 10  wherein the dielectric material has a Qf at 1 GHz of at least 7000. 
     
     
         20 . The method of  claim 10  wherein the dielectric material has no aluminum.