Electronic devices comprising silicon carbide materials

Abstract

An electronic device comprising a stack structure comprising one or more stacks of materials and one or more silicon carbide materials adjacent to the one or more stacks of materials. The materials of the one or more stacks comprise a single chalcogenide material and one or more of a conductive carbon material, a conductive material, and a hardmask material. The one or more silicon carbide materials comprises silicon carbide, silicon carboxide, silicon carbonitride, silicon carboxynitride, and also comprise silicon-carbon covalent bonds. The one or more silicon carbide materials is configured as a liner or as a seal. Additional electronic devices are disclosed, as are related systems and methods of forming an electronic device.

What is claimed is: 
     
         1 . An electronic device comprising:
 memory cells, the memory cells comprising:
 stacks of materials comprising a single chalcogenide material and one or more additional materials; and 
 at least one silicon carbide material vertically adjacent to the stacks of materials and on sidewalls of the single chalcogenide material, a thickness of the at least one silicon carbide material substantially uniform along a length thereof. 
   
     
     
         2 . The electronic device of  claim 1 , wherein the one or more additional materials comprise one or more conductive carbon materials. 
     
     
         3 . The electronic device of  claim 1 , wherein the one or more additional materials comprise one or more conductive metal materials. 
     
     
         4 . The electronic device of  claim 1 , wherein the at least one silicon carbide material comprises a first silicon carbide material and a second silicon carbide material directly contacting the first silicon carbide material. 
     
     
         5 . The electronic device of  claim 1 , wherein the at least one silicon carbide material exhibits a dielectric constant of less than about 8. 
     
     
         6 . The electronic device of  claim 1 , wherein a material between laterally adjacent stacks is substantially free of voids. 
     
     
         7 . An electronic device comprising:
 an array of memory cells, one or more of the memory cells comprising:
 stacks of materials comprising a single chalcogenide material and one or more of a conductive carbon material and a conductive metal material; and 
 at least one silicon carbide material on sidewalls of the stacks of materials and on sidewalls of the single chalcogenide material, the at least one silicon carbide material comprising silicon-carbon covalent bonds. 
   
     
     
         8 . The electronic device of  claim 7 , wherein the single chalcogenide material is between a first conductive carbon material and a second conductive carbon material. 
     
     
         9 . The electronic device of  claim 7 , wherein a width of the one or more of the conductive carbon material and the conductive metal material is substantially the same as a width of the other materials of the stacks. 
     
     
         10 . The electronic device of  claim 7 , wherein a width of the one or more of the conductive carbon material and the conductive metal material is greater than a width of the other materials of the stacks. 
     
     
         11 . The electronic device of  claim 7 , wherein the one or more of the conductive carbon material and the conductive metal material are vertically adjacent to the single chalcogenide material. 
     
     
         12 . The electronic device of  claim 7 , further comprising a dielectric material between the at least one silicon carbide material and the stacks of materials. 
     
     
         13 . The electronic device of  claim 7 , wherein the at least one silicon carbide material comprises one or more of oxygen atoms, nitrogen atoms, or boron atoms. 
     
     
         14 . An electronic device comprising:
 memory cells, one or more of the memory cells comprising:
 a stack structure comprising one or more stacks of materials, the materials of the one or more stacks comprising at least one chalcogenide material and one or more conductive materials; 
 one or more silicon carbide materials adjacent to at least a portion of the one or more stacks of materials, the one or more silicon carbide materials comprising silicon carboxide, silicon carbonitride, silicon carboxynitride, or silicon boronitrocarbide; and 
 a dielectric material between laterally adjacent stacks of materials. 
   
     
     
         15 . The electronic device of  claim 14 , wherein the dielectric material and the one or more silicon carbide materials exhibit a same chemical composition. 
     
     
         16 . The electronic device of  claim 14 , wherein the dielectric material and the one or more silicon carbide materials exhibit a different chemical composition. 
     
     
         17 . The electronic device of  claim 14 , wherein the one or more silicon carbide materials comprises a stoichiometric compound. 
     
     
         18 . The electronic device of  claim 14 , wherein the one or more silicon carbide materials comprises a non-stoichiometric compound. 
     
     
         19 . The electronic device of  claim 14 , wherein the one or more conductive materials is configured as an access line, a word line, a contact, a digit line, or a bit line. 
     
     
         20 . The electronic device of  claim 14 , wherein the one or more silicon carbide materials exhibits a density of from about 1.8 g/cm 3  to about 2.0 g/cm 3 .